ZENER C 211 Search Results

4069A

Abstract: 1n zener 100-C 1N4057 1N4057A 1N4058 1N4058A 1N4059 1N4059A 1N4060
Contextual Info: • 12.4 THRU 200 VOLT NOMINAL ZENER VOLTAGES + 5% 1N4057 thru •TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4085A ■EFFECTIVE TEMPERATURE COEFFICIENTS OF 0.005no/ C AND 0.002%/ C - HERMETICALLY SEALED. METALLURGICALLY BONDED. DOUBLE PLUG SUBASSEMBLIES ENCAPSULATED IN A PLASTIC CASE

Contextual Info: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) rDS(on) Max (Ω) C rss Max (pF) SD211DE 30 1.5 45 @ VGS=10V 0.5 2 SD213DE 10 1.5 45 @ VGS=10V 0.5 2 SD215DE 20 1.5 45 @ VGS=10V 0.5

Contextual Info: SD-SST211/213/215 N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED PRODUCT SUMMARY PART NUMBER V BR DS Min (V) V(GS)th Max (V) C rss Max (pF) 1.5 rDS(on) Max (Ω) 15 45 @ V GS=10V SD211DE 30 0.5 2 SD213DE 10 1.5 45 @ VGS=10V 0.5 2 SD215DE 20 1.5 45 @ VGS=10V

colour code diode zener

Abstract: 2M39Z 1I412 diode Lz zener marking code zener diode wl NT 101 r2i diode zener diode si 18 4.7 B2 glass diodes SIV20
Contextual Info: i t i • . >i ■■in-'? » •■•!L ■Wi t i f .v jf e \'S.\' - 2 M 6 - 8 Z - 2 ÎV 1 2 0 Û Z . 2.0 Watts Giass Passivated Junction Silicon Zener Diodes *P b l R o H S >. > COMPLIANCE DO-15 -ÜÛC3*> un. Features , » <- P lastic p a c k a g e h a s U nderw riter's L a b ora to ry

964B

Abstract: LL964B 04 6269
Contextual Info: Zener Regulator Diodes Type Mil Spec Data P o w er S h e e t ID <W Vz : V) Izt 1 (mA) Zzt Z zk <n) <m VR i To i. i I i M ic ro s e m i I P a c k a g e D iv is io n | O u tlin e “ P art N u m b e r Microsemi (V) [(+/-%) 1N759 S cottsd ale D O -35 STD 5256

PA0876.003NL

Abstract: GCM32ER70J476KE19L PA1005.100NL planar transformer theory GRM21BR71E225KA73L LM5045 AN2111 CRCW04021K00JNED FERRITE TRANSFORMER 500W IRFH5053TRPBF
Contextual Info: National Semiconductor Application Note 2111 Ajay Hari February 23, 2011 Introduction Theory of Operation The LM5045 evaluation board is designed to provide the design engineer with a fully functional power converter based on the full-bridge topology to evaluate the LM5045 PWM controller. The evaluation board is provided in an industry standard quarter brick footprint.

PA0876.003NL

Abstract: zener diode 4.7V 250MW GRM21BR71E225KA73L murata np0 GCM32ER70J476KE19L zener diode 4.7V PA1005.100NL LM5046 FCX690BTA 48V 100W zener diode
Contextual Info: National Semiconductor Application Note 2115 Ajay Hari February 23, 2011 Introduction Theory of Operation The LM5046 evaluation board is designed to provide the design engineer with a fully functional power converter based on the phase-shifted full-bridge topology to evaluate the

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

Contextual Info: ZGL41-100 thru ZGL41-200A Vishay General Semiconductor Surface Mount Glass Passivated Power Voltage-Regulating Diodes FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor

PA0876.003NL

Contextual Info: User's Guide SNVA470B – February 2011 – Revised May 2013 AN-2115 LM5046 Evaluation Board 1 Introduction The LM5046 evaluation board is designed to provide the design engineer with a fully functional power converter based on the phase-shifted full-bridge topology to evaluate the LM5046 PWM controller. The

PA0876

Contextual Info: User's Guide SNVA468C – February 2011 – Revised May 2013 AN-2111 LM5045 Evaluation Board 1 Introduction The LM5045 evaluation board is designed to provide the design engineer with a fully functional power converter based on the full-bridge topology to evaluate the LM5045 PWM controller. The evaluation board

in5242

Abstract: 1N5102 in5227 in5239 IN5228 IN5240 MZ240 IN5238 1N5104 IN5226
Contextual Info: Zener Voltage at I zt Volts @ mA Zener Type No. Max. Zener Impedance @ I zt Ohms Zener Voltage Tolerance Power Rating 3 w att " " 1 N 51 02 1 N 51 03 1 N 51 04 180.0 190.0 200.0 4.0 8 50 .0 900.0 950.0 ±5% 1 N 51 05 1 N 51 06 1 N 51 07 220.0 240.0 260.0 3.0

6.2V Zener Diode

Abstract: 12v zener diode voltage reference Zener Chip MB4214 VR 100K FF12 FR 151 diode diode zener 3c2 MB421
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-29106-2E ASSP TIMER MB4214 LONG PERIOD TIMER The Fujitsu MB4214 is designed for a long period timer. It contains oscillator, divider 13 stages of flip-flop , output circuit, power supply circuit and comparator (2-ch).

1n4146 zener

Abstract: Zener diode 1N4146 MUR100E AN1680 MC3337X 3337X 1N4146 MC33374 COIL CLAMPING DIODE 1029 MOTOROLA MBR20100
Contextual Info: MOTOROLA Order this document by AN1680/D SEMICONDUCTOR APPLICATION NOTE AN1680 Design Considerations for Clamping Networks for Very High Voltage Monolithic Off-line PWM Controllers Christophe BASSO, MOTOROLA SPS BP–1029, Le Mirail, 31023 Toulouse France

rt 9045

Contextual Info: ASSP TIMER MB4214 LONG PERIOD TIMER The Fujitsu MB4214 is designed for a long period timer. It contains oscillator, divider 13 stages of flip-flop , output circuit, power supply circuit and comparator (2-ch). Arbitrary period is set by external resistor Rt, capacitor Ct and Vs input voltage.

zener diode c5

Abstract: Zener C422 zener diode c6 C2 6 zener diode 5-6V Zener Diode Zener Diode C3 5
Contextual Info: ASX401 100 ~ 3000 MHz MMIC Amplifier Features Description  19.5 dB Gain at 900 MHz  29.5 dBm P1dB at 900 MHz  47 dBm Output IP3 at 900 MHz  MTTF > 100 Years  Single Supply The ASX401, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide

1N4058

Abstract: 1N4057 1N4057A 1N4058A 1N4059 1N4059A 1N4060 1N4060A 1N4061 1N4085A
Contextual Info: • 12.4 THRU 200 VOLT NOMINAL ZENER VOLTAGES + 5% 1N4057 thru • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4085A • EFFECTIVE TEMPERATURE COEFFICIENTS OF 0.005%/°C AND 0.002%/°C • HERMETICALLY SEALED, METALLURGICALLY BONDED, DOUBLE PLUG SUBASSEMBLIES ENCAPSULATED IN A PLASTIC CASE

CMPZ4625

Abstract: CMPZ4614 CMPZ4615 CMPZ4616 CMPZ4617 CMPZ4618 CMPZ4619 CMPZ4621 CMPZ4620 CMPZ4622
Contextual Info: Central CMPZ4614 THRU CMPZ4627 TM Semiconductor Corp. 350mW LOW NOISE ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMIONDUCTOR CMPZ4614 Series Silicon Zener Diode is high quality voltage regulator designed for low leakage, low current and low noise applications.

regulator lk

Contextual Info: g r v jT jg ^ n =3UVU u L ^ ± 3 ü -ü ADJUSTABLE SHUNT REGULATOR SC431 TEL: 805-498-2111 FAX : 805-498-3804 SYMBOL FEATURES Cathode • W ide Operating Current Range 60piA to 150m A • Low Dynamic Output Impedance 0.25Q Typ. • Low Temperature Coefficient

ST tvs diode sma

Abstract: BP317 BZG142 BZG142-68 philips zener diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BZG142 SMA ZenBlockTM; zener with integrated blocking diode Preliminary specification 2000 Dec 19 Philips Semiconductors Preliminary specification SMA ZenBlockTM; zener with integrated blocking diode

ZENER DIODE t2

Abstract: philips data book zener diode AS 108-120 BP317 BZD142 BZD142-68 philips zener diode IEC 60060-1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BZD142 ZenBlockTM; zener with integrated blocking diode Preliminary specification 2000 Dec 19 Philips Semiconductors Preliminary specification ZenBlockTM; zener with integrated blocking diode BZD142

Contextual Info: ASX501 250 ~ 2500 MHz MMIC Amplifier Features Description  18dB Gain at 900 MHz The ASX501, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication

diode UF 2010

Contextual Info: ASX101 5 ~ 4000 MHz MMIC Amplifier Features Description  22 dB Gain at 900 MHz The ASX101, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 4 GHz. The amplifier is available in a

Contextual Info: ASX201 250 ~ 5000 MHz MMIC Amplifier Features Description  16 dB Gain at 2 GHz  21 dBm P1dB at 2 GHz  34.5 dBm Output IP3 at 2 GHz  MTTF > 100 Years  Single Supply The ASX201, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide