ZENER 5349B Search Results

zener 5359B

Abstract: 5349B 5346B 5347B zener 5349b 5353B 5359b 5352b 5362B 5350B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Nominal Zener voltage Nominale Zener-Spannung 8.2…200 V Standard tolerance of Zener voltage Standard-Toleranz der Zener Spannung ±5% Plastic case – Kunststoffgehäuse ~ DO-201

in5338b

Abstract: in5338b Zener diode in5369b IN5338 in5333B IN5341 in5349b in53418 Zener diode in5347b IN5359b
Contextual Info: 1N 5333B thru 1N 5388B I Microsemi Corp. $ The diode experts SCOTTSDALE , AZ For more information call: 602 941-6300 SILICON 5 WATT ZENER DIODES FEATUR ES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT CAPABILITY • FOR AVAILABLE TO LERANCES - SEE NOTE 1

5349B

Abstract: Z5359B DIODE Z53 5351B
Contextual Info: Central" CMZ5342B THRU CMZ5388B Semiconductor Corp. HIGH POWER ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 5.0mW, 5% TOLERANCE DESCRIPTION: The C E N T R A L SEM IC O N D U CTO R CM Z5342B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in an epoxy

in5388b

Abstract: IN5340B IN5368B IN5342B IN 5342B IN5343b IN 5338B diode IN 5342B 5338B 5388b
Contextual Info: 1N 5333B thru 1N 5388B Micro/semi Corp. / SANTA ANA, CA The d'Ode e x p e n s SCOTTSDALE, AZ For more inform ation call: / 602 94I-6300 FEATURES SILICON 5 WATT ZENER DIODES • ZENER VOLTAGE 3.3V to 200V • HIGH SURGE CURRENT CAPABILITY • FOR AVAILABLE TOLERANCES - SEE NOTE I

5342B

Abstract: 1n 4148 zener diode IN5956B diode IN 5342B IN 5342B Zener Diode 4148 zener T 4148 IN5913B in5388b IN5342B
Contextual Info: ZENER DIODES 1 WATT ZENER DIODE-PLASTIC O P E R A T IN G A N D S TO R A G E T E M P E R A T U R E - 6 5 ° C to + 1 75 °C IN 4 7 3 6 THRU IN 4 7 6 4 *E LE C T R IC A L C H A R A C T E R IS T IC S Ta = 2 5 °C u n le ss o th e rw ise n o te d V f = 1.2 V M ax,

Contextual Info: 1 N 5345 B.1 N 5388 B 5 W Silizium-Leistungs-Z-Dioden Silicon-Power-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung 8.7.200 V Tolerance o f zener voltage Toleranz der Arbeitsspannung ±5% /4 .5 " Plastic case KunststofFgehäuse ~ D0-201 Weight approx.

5350B

Contextual Info: SILICOM_ _ D TOPES Us.A. CASK S ZENER :_ D O -4 1 _ D O -2 7 A_D O -2 7 1 .3 H • T a - 2 3 ° C ZEN E R D IO D E S _ Case DO-41 TEMP. 1 I ZT

5356b

Abstract: 5352B 5353B in 5352b 5361B 1N5348B 5349B 5351B DO-201AE in 5349b
Contextual Info: DATA SHEET 1N5348B SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 11 to 39 Volts CURRENT 5.0 Watts Unit: inch mm DO-201AE FEATURES • For surface mounted applications in order to optimize board space. .042(1.07) .037(0.94) 1.0(25.4)MIN. • Low profile package

5338B

Abstract: 5339b 5359b 5341B zener 5359B 5340B 5344b 5366B 5353B zener diode ab
Contextual Info: 1N5333B thru 1N5388B Microsemi Corp. f The dtoóe experts / SANTA ANA, CA SCOTTSDALE, A Z / F o r m o re inform ation call: / 602 941-6300 SILICON 5 WATT ZENER DIODES FEATU RES • Z E N E R VO LTAG E 3.3V to 200V • HIGH S U R G E C U R R E N T C A P AB ILITY

5349B

Abstract: 5357B 5364b 5366B 5352b 5359b 5369b 5363b 5353b 5350B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Silicon-Power-Z-Diodes (non-planar technology) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

5346B

Abstract: 5388B 5359B 5368B 5366B 5363b 5358B 5349B 5369b 5375B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

5346B

Abstract: 5349B 5375B 5353b 5359B 5345B 5350B 1n5376b 5361B 5358B
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Maximum power dissipation Maximale Verlustleistung Ø 4.5 5W ±0.1 7.5 ±0.1 62.5 ±0.5 Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse ~ DO-201 Weight approx. – Gewicht ca.

5349B

Abstract: 5352B 5353B 5364b 5375B 5366B 5363B 5359B 5350B 5367B
Contextual Info: 1N 5347B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

IN 5349B

Abstract: 5377B 5357B 5368B 5363b in 5352b in 5359b 5349b 5364b 5352b
Contextual Info: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse

5344b

Abstract: 5347b diode 5361B 5362B IN 5344B 5357B 5374B S200-2-00 5348B 5363B
Contextual Info: 1N5344B - 1 N5388B VISHAY 5WZENER DIODES fL IT E K K r P O W E R S E M IC O N D U C T O R j Features Voltage Range 8.2V - 200V Glass Passivated Junction 5W Steady State High Surge Capability ±5% Voltage Tolerance on Nominal Vz is Standard 100% Tested A A

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

in 5359b

Abstract: IN 5349B in 5352b 5357B 5346B 5369b 5349b 5388b 5345B 5352b
Contextual Info: Diotec 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Ø 4.5 ±0.1 Silizium-Leistungs-Z-Dioden Nominal breakdown voltage Nenn-Arbeitsspannung 8.7…200 V Standard tolerance of Z-voltage Standard-Toleranz der Arbeitsspannung ± 5 % (E24) Plastic case – Kunststoffgehäuse

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

stepping motor EPSON EM - 234

Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A
Contextual Info: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main