Z9 MA 814 Search Results

rohm surface mounted transistor series

Abstract: Z1 SOT343 GAS105
Contextual Info: AdvancedPreliminary Information Product Description Sirenza Microdevices’ SGA-8143 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 6 GHz. The SGA-8143 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides high

NEC 09030

Abstract: NEM090303M-28 8712 RESISTOR ldmos nec
Contextual Info: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090303M-28 N-CHANNEL SILICON POWER MOS FET FOR UHF-BAND POWER AMPLIFIER DESCRIPTION The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies are

NEM090303M-28

Abstract: NEC 09030
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

LDMOS 15w

Abstract: TRANSISTOR Z4 ATC100A RO4350 omni spectra
Contextual Info: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 11/28/05 MAPL000817-015C00 Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz,

ATC100a

Abstract: TRANSISTOR Z4 LDMOS 15w OMNI SPECTRA OZ 960 omni spectra sma transistor z9 MAPL-000817-015C00 RO4350 1206cs
Contextual Info: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 1/11/06 MAPL-000817-015C00 Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz,

atc100a

Abstract: omni spectra sma TRANSISTOR Z4 OZ 960 LDMOS 15w RO4350 25 pin microstrip connector transistor z9 transistor z5
Contextual Info: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 6/30/05 MAPLST0817-015PP Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz High Gain, High Efficiency and High Linearity Typical P1dB performance at 960MHz,

L-Band

Contextual Info: FLL21E060IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E060IY is a high power GaAs FET that offers high efficiency,

Contextual Info: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,

ED-4701

Abstract: FLL21E135IX
Contextual Info: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,

FLL21E060IY

Abstract: FLL21E06 diode gp 421 ED-4701 ED 17642
Contextual Info: FLL21E060IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E060IY is a high power GaAs FET that offers high efficiency,

R15-24

Abstract: 40dBm f1214
Contextual Info: FLL21E045IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E045IY is a high power GaAs FET that offers high efficiency,

Contextual Info: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers

cw 7809

Abstract: RM110 6822 transistor 6822 transistors 6822 ED-4701 FLL21E090IY
Contextual Info: FLL21E090IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=43dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E090IY is a high power GaAs FET that offers high efficiency,

Z3.7

Abstract: ED-4701 FLL21E045IY
Contextual Info: FLL21E045IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E045IY is a high power GaAs FET that offers high efficiency,

cw 7809

Abstract: 6822 FET FLL21E090IY transistor 6822 transistors 6822 ED-4701
Contextual Info: FLL21E090IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=43dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E090IY is a high power GaAs FET that offers high efficiency,

omni spectra test fixture

Abstract: RF transistor gain 20dB
Contextual Info: RF Power Field Effect Transistor LDMOS, 800—1000 MHz, 2W, 26V 10/31/03 MAPLST0810-002PP Preliminary Features Q Q Q Q Q Package Style Designed for broadband commercial applications up to 1GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

base station product

Abstract: NEM091203P-28 NEM091203P-28-A ldmos nec
Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM091203P-28 N-CHANNEL SILICON POWER LDMOS FET FOR 135 W UHF-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NEM091203P-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for 850 to 960 MHz applications, such as, GSM/EDGE/N-CDMA cellular base station.

ATC100B

Abstract: TRANSISTOR Z4 MAPLST1617-030CF
Contextual Info: RF Power Field Effect Transistor LDMOS, 1600 — 1700 MHz, 30W, 28V 5/5/05 MAPLST1617-030CF Preliminary Features Package Style Designed for INMARSAT applications in the 1620-1670 MHz frequency band. Typical Two Tone Performance IMD=-30 dBc : Average Output Power: 15W

atc100a

Abstract: LDMOS 15w transistor amplifier a05t A05T RO4350 0945 transistor
Contextual Info: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 7/27/06 MAPL-000817-015CPC Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz,

ATC100B

Abstract: dqpsk A05T MAPLST1900-030CF ER254
Contextual Info: RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 30W, 26V 10/31/03 MAPLST1900-030CF Preliminary Features Package Style Designed for PHS applications in the 1890-1925 MHz frequency band. Q Q Typical performance in PHS mode at -68 dBc ACPR 600kHz :

ATC100B

Abstract: dqpsk A05T MAPLST1900-060CF omni spectra sma
Contextual Info: RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 60W, 26V 10/31/03 MAPLST1900-060CF Preliminary Features Package Style Designed for PHS applications in the 1890-1925 MHz frequency band. Q Q Typical performance in PHS mode at -65 dBc ACPR 600kHz :

AS5040

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com