Z51C Search Results

Scans-0016000

Contextual Info: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart­

MGF1323

Abstract: small signal GaAs FET L to Ku band amplifiers KU 745 KU 608 ku 202
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> beMTñST DD17Û3S BAT MGF1323 SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 3 2 3 , low -noise G aA s F E T w ith U n it, m illim eters inches an N -channel 4 M IN . 1.85 ± 0 . 2 4 M IN . (0 .1 5 7 M IN .) (0 .0 7 3 + 0 .0 0 8 ) (0 .1 5 7 M \N .)

Contextual Info: DeT| TCHTSSO □□□7713 5 Üb TOSHIBA {DISCRETE/OPTO} jL 9097250 T O S H IB A b6C C D IS C R E T E /O PT O 07793 U' T-33-29 SILICON NPN TRIPLE DIFFUSED TYPE _ DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.

1MBI600PX-140

Abstract: S1000 a1sy
Contextual Info: 1MBI600PX-140 IGBT Modules IGBT Modules P series 1400V/600A I Features >Small temperature dependence of the turn-off switching loss >Easy to connect in parallel »Wide RBSOA square up to 2 times of rated current and high shortcircuit withstand capability

300x2

Abstract: 2SD799 AC75 hFE-60
Contextual Info: TOSHIBA {D ISCR ET E/OPTO} Üb DeT| TCHTSSO □ □ □ 7 7 1 3 5 jL 9097250 T O S H IB A b6C C D IS C R E T E /O PTO 07793 U' T -33 -2 9 SILICON NPN TRIPLE DIFFUSED TYPE _ DARLINGTON POWER) INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS.