Z40UF Search Results

Z40UF Equivalents

Sorry, but there were no results for that search. Please update your search settings or try another search term.

Z40UF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
z50ufg Contextual Info: Z30UFG Z40UFG Z50UFG HIGH VOLTAGE RECTIFIERS 100nS RECOVERY AXIAL LEADED HERMETICALLY SEALED in. mm V , . T rr = 3000-5000V = 1 QA = 100nS 1.00(25.4) Min. .350(8.89) Max. .215(5.5) Max. •040±.003 (1,02±.08) ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS	OCR Scan	100nS Z30UFG Z40UFG Z50UFG 000-5000V 100nS 100-C 50VDC z50ufg	PDF
Contextual Info: Z30UF Z40UF Z50UF HIGH VOLTAGE RECTIFIERS EPOXY MOLDED, 100nS RECOVERY V = 3000-5000V = 750mA = 100nS rw m AXIAL LEADED RR in. mm ,200±.015 (5.08±.38) ,250±.015(6.35±.38) : •060±.003 (1.52±.06) .40(10.16)Min. T ELECTRICAL CHARACTERISTICS AND MAXIMUM RAT NGS	OCR Scan	100nS Z30UF Z40UF Z50UF 000-5000V 750mA 100nS 50VDC	PDF
1N6515US Abstract: 1N6513US 1N6517 JV6512 1N6517US 1N6519 z15u Z60UFG Z100UFG 1N6512 Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/575D 13 August 2009 SUPERSEDING MIL-PRF-19500/575C 8 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER,	Original	MIL-PRF-19500/575D MIL-PRF-19500/575C 1N6512 1N6519, 1N6512US 1N6519US, MIL-PRF-19500. 1N6515US 1N6513US 1N6517 JV6512 1N6517US 1N6519 z15u Z60UFG Z100UFG	PDF

Catalog Datasheet

Type

Document Tags

PDF

z50ufg

Contextual Info: Z30UFG Z40UFG Z50UFG HIGH VOLTAGE RECTIFIERS 100nS RECOVERY AXIAL LEADED HERMETICALLY SEALED in. mm V , . T rr = 3000-5000V = 1 QA = 100nS 1.00(25.4) Min. .350(8.89) Max. .215(5.5) Max. •040±.003 (1,02±.08) ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS

OCR Scan

100nS Z30UFG Z40UFG Z50UFG 000-5000V 100nS 100-C 50VDC z50ufg

PDF

Contextual Info: Z30UF Z40UF Z50UF HIGH VOLTAGE RECTIFIERS EPOXY MOLDED, 100nS RECOVERY V = 3000-5000V = 750mA = 100nS rw m AXIAL LEADED RR in. mm ,200±.015 (5.08±.38) ,250±.015(6.35±.38) : •060±.003 (1.52±.06) .40(10.16)Min. T ELECTRICAL CHARACTERISTICS AND MAXIMUM RAT NGS

OCR Scan

100nS Z30UF Z40UF Z50UF 000-5000V 750mA 100nS 50VDC

PDF

1N6515US

Abstract: 1N6513US 1N6517 JV6512 1N6517US 1N6519 z15u Z60UFG Z100UFG 1N6512
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/575D 13 August 2009 SUPERSEDING MIL-PRF-19500/575C 8 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER,

Original

MIL-PRF-19500/575D MIL-PRF-19500/575C 1N6512 1N6519, 1N6512US 1N6519US, MIL-PRF-19500. 1N6515US 1N6513US 1N6517 JV6512 1N6517US 1N6519 z15u Z60UFG Z100UFG

PDF