Z14 J Search Results

BZX84-3V3 z14

Abstract: c5v6 BZX84 bzx84-3v3 BZX84C BZX84-C27 c4v7 bzx843v3 c6v2
Contextual Info: Transys Electronics L I M I T E D BZX84C series SILICON PLANAR VOLTAGE REGULATOR DIODES PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 3 Marking BZX84–C3V3 = Z14 C3V6 = Z15 C3V9 = Z16 C4V3 = Z17 C4V7 = Zl

CEE2X56S-V3Z14

Abstract: EE2X92SC-VI2Z14 Framatome 211 pc burndy card edge 2,54 CEE2X91S-V11Z14 27Z14 54461 T8901 burndy CARD EDGE 14PTS
Contextual Info: CEE2X91S-V7Z14 CEE2X91S-VI1Z14 36 75 91 91 112 150 182 182 TABLE OF DIMENSIONS N& OF CONTACT PARS D E BAY A BAY B 11 45 .5 9 0 N4.991 Z39Q rSB.171 37 38 1.890 [4&011 1.940 [49.281 42 49 2.140 r5 4 J6 l 2.490 I83 45 1 42 49 2.140 rS 4 .3 6 l 2.490 f8 3 ¿ 5 l

Sallen-Key

Abstract: Z4 SOT23 opamp applications schematics Z14 SC70-6 Z14 SOT23-6 Z8 SOT23 sot23t cmos opamp Z6 SOT23 z1 sot23
Contextual Info: AN2995 Demonstration board user guidelines for single operational amplifiers Introduction This demonstration board is designed to help in the characterization of single operational amplifiers in SOT23-5 two different pinouts and SC70-5 packages. Operational amplifiers

EEA-PAM-523-A-32

Abstract: EEA-PAM-571-A-32 EEA-PAM-533-A-32 EEA-PAM-525-A-32 EEA-PAM-561-A-32 EEA-PAM-535-A-32 vickers eea-pam-533-a-32 EEA-PAM 561 A 12 vickers amplifier card EEA-PAM-581-A-32 EEA-PAM-513-A-32
Contextual Info: Vickers Accessories Power Amplifier EEA-PAM-5*-A-32 for Proportional Control Valves Contents General Description p The following power amplifier models are covered in this catalog The power amplifier has five voltage g i inputs t one ( iinverting ti ) and

7Z14

Contextual Info: Revised June 2000 NC7SZ14 TinyLogic UHS Inverter with Schmitt Trigger Input General Description Features The NC7SZ14 is a single Inverter with Schmitt Trigger input from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced CMOS

Z14 SC70-6

Abstract: NC7WZ14
Contextual Info: Revised June 2000 NC7WZ14 TinyLogic UHS Dual Inverter with Schmitt Trigger Inputs General Description Features The NC7WZ14 is a dual inverter with Schmitt trigger input from Fairchild’s Ultra High Speed Series of TinyLogic in the space saving SC70 6-lead package. The device is fabricated with advanced CMOS technology to achieve ultra

7z14

Abstract: 7z14 sot23 NC7SZ14P5X NC7SZ14M5X NC7SZ14P5 Z14 SC70 MA05B MO-178 NC7SZ14 NC7SZ14M5
Contextual Info: Revised January 2001 NC7SZ14 TinyLogic UHS Inverter with Schmitt Trigger Input General Description Features The NC7SZ14 is a single Inverter with Schmitt Trigger input from Fairchild’s Ultra High Speed Series of TinyLogic. The device is fabricated with advanced CMOS

NC7WZ14

Abstract: Z14 SC70 NC7WZ14P6 NC7WZ14P6X SC70-6
Contextual Info: Revised January 2001 NC7WZ14 TinyLogic UHS Dual Inverter with Schmitt Trigger Inputs General Description Features The NC7WZ14 is a dual inverter with Schmitt trigger input from Fairchild’s Ultra High Speed Series of TinyLogic in the space saving SC70 6-lead package. The device is fabricated with advanced CMOS technology to achieve ultra

Contextual Info: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality

16L8

Abstract: R4700
Contextual Info: Galileo Technology, Inc. Secondary Cache Module For R4600/R4700 CPUs Galileo-2 Preliminary July 1995, Rev. 2 FEATURES OVERVIEW • 512K or 256KByte secondary cache module for the R4600 and R4700 RISC processors • 50 MHz bus frequency support • Zero wait state to the first word

TQM8M9074

Abstract: Z11 Marking Code
Contextual Info: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality

D-97816 lohr

Abstract: rexroth HED 4 GDME 311 mannesmann rexroth Z15L24 RN181 rn181.04 D-97813 GDME rexroth
Contextual Info: RDE 50 060-E/08.95 Hydro-elektrischer Druckschalter Typ HED 8, Serie 1X Hydro-electric Pressure switch Type HED 8, Series 1X RDE 50 060-E/08.95 Ersetzt / Replaces: 12.94 Bei Ersatzteilbestellung bitte die komplette Typenbezeichnung siehe Typenschild angeben.

RO4350B

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

ATC100A101JP150

Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

Contextual Info: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

Z6 3pin

Abstract: J262 AFT09MS007NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

GRM55DR61H106KA88L

Abstract: MW7IC2040N atc100b0r8bt500xt atc100b6r8ct500xt multicomp chip resistor CRCW12065601FKEA Pcb 065-44 ATC100B1R0BT500XT 02499 A115
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 0, 2/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage

transistor z14 L

Abstract: transistor z9 Transistor Z14
Contextual Info: GFCIOIOA GFCIOIOA G F CIOIOA 16-BIT BARREL SHIFTER GENERAL DESCRIPTION: THE GFCIOIOA MEGAFUNCTION PERFORMS » 16-BIT END-AROUND SHIFT, OR A BARREL SHIFT. THERE ARE FOUR CONTROL LINES SI, S2 , S4, AND SB TO DETERMINE HOW MANY PLACES TO THE LEFT THE 16-BIT INPOTS (R15 THROUGH RO) WILL BE SHIFTED AT THE OUTPUTS

marking code ZENER

Abstract: BZX84C5V1 bzx84c BZX84C3V3 z14 BZX84C2V7 BZX84C3 BZX84C3V3 BZX84C3V6 MMBZ5223B MMBZ5225B
Contextual Info: JGD BZX84C - SERIES o SURFACE MOUNT ZENER DIODES/SOT - 23 Ta = 25^ CrossReference Mar­ king Code Part No. Zener Voltage @ Izt Vz V Max.Dyn. Test Max.Dyn. Test Imped. Current Imped. Current @lzk ¿Izt Rev. Current @Vr Temp Coeff. @Izt Zzt(Q ) Izt(mA) Zzk(Q ) Izk(mA) avz( %/k; 1K/ulA)

J118 MOSFET

Abstract: j122 mosfet AGR09085E AGR09085EF AGR09085EU JESD22-A114 gl 3201 J122 transistor mosfet j122 RM73B2B120J
Contextual Info: Preliminary Data Sheet January 2003 AGR09085E 85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

agere c8 c1

Abstract: 100b8r2jw 100B6R8JW
Contextual Info: Preliminary Data Sheet January 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diode BZX584C2V4-BZX584C39 ZENER DIODE SOD-523 FEATURES • Planar Die Construction • 100mW Power Dissipation • Zener Voltages from 2.4 – 39V Maximum Ratings @TA=25℃ unless otherwise specified

A5M0

Abstract: IC 2 5/A5M06
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS006N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS006NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diode BZX584C2V4-BZX584C39 ZENER DIODE SOD-523 FEATURES • Planar Die Construction • 100mW Power Dissipation • Zener Voltages from 2.4 – 39V Maximum Ratings @TA=25℃ unless otherwise specified