Z13 SOT Search Results

Sallen-Key

Abstract: Z4 SOT23 opamp applications schematics Z14 SC70-6 Z14 SOT23-6 Z8 SOT23 sot23t cmos opamp Z6 SOT23 z1 sot23
Contextual Info: AN2995 Demonstration board user guidelines for single operational amplifiers Introduction This demonstration board is designed to help in the characterization of single operational amplifiers in SOT23-5 two different pinouts and SC70-5 packages. Operational amplifiers

81g diode

Abstract: 8F sot23 Z14 SOT23-5 8Y SOT23 zener diode 22v
Contextual Info: Zener Diode BZX84C 350mW MMBZ5221B - 5256B miniReel Order f' Number Volt SOT23 2.4V 2.7V 3.0V 3.3V 3.9V 4.3V 4.7V 5.1V 5.6V 6.2V 6.8V 7.5V 8.2V 9.1V 10V 12V 15V 16V 18V 20V 22V 24V 27V 30V 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232

Contextual Info: Diodes SMD Type 350mW Surface Mount Zener Diodes BZX84C3V0 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1

Contextual Info: Product specification BZX84C3V0 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

100B330JW

Abstract: chip resistors 0805 philips MRF9100 esd z10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these

zener y11

Abstract: zener 472
Contextual Info: Surface Mount Zener Diodes 350m W Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* N Vz @ Izj Typical Temperature Coefficient Maximum Reverse Leakage Current €» VR Vz Volts O hm s mA O hm s mA To %/°C mA Volts N

100B220GW

Abstract: 100B100GW
Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these

marking code ZENER

Abstract: BZX84C5V1 bzx84c BZX84C3V3 z14 BZX84C2V7 BZX84C3 BZX84C3V3 BZX84C3V6 MMBZ5223B MMBZ5225B
Contextual Info: JGD BZX84C - SERIES o SURFACE MOUNT ZENER DIODES/SOT - 23 Ta = 25^ CrossReference Mar­ king Code Part No. Zener Voltage @ Izt Vz V Max.Dyn. Test Max.Dyn. Test Imped. Current Imped. Current @lzk ¿Izt Rev. Current @Vr Temp Coeff. @Izt Zzt(Q ) Izt(mA) Zzk(Q ) Izk(mA) avz( %/k; 1K/ulA)

Contextual Info: FZ84C2V4S THRU FZ84C24VS SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LUX Package: SOT-23 3 ZENER DIODES ZXX Pinout: 1-Anode, 2-NC, 3-Cathode (Vfr=0.9V Max @ Zener Voltage TYPE Vz1 (V) MARK @ lzT1=5fnA F=1 OmA For All Typos) (225mW) Max Zener

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 SOT-23 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation

AFT504

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

BZX84C3V3 z14

Abstract: diode zener z9 Z16 SOT23
Contextual Info: 350mW ZENER DIODES BZX84 SERIES 350mW ZENER DIODE • The latest comprehensive data to fully support these parts is readily available. • • • • • New Product SOT23 Package Voltage Max. Zener Typ. Temp Max. Reverse TA=25°C Range Impedance Coefficient

153 SOT23

Contextual Info: ZENER DIODES 350mW BZX84 SERIES CASE TYPE: T0-236AB (SOT-23) % Type Marking Ze n e r V o lta g e !1 1 at D yn a m ic resistance at T e m p , coeffi­ cient of Ze n e r Vo ltag e at In In In V rV rzj i i avz i H / K Test current D yn a m ic resistance at

BZX84-C5V1

Contextual Info: BZX84Cx Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.3 Watts FEATURES SOT-23 • Planar die construction • 300mW power dissipation rating • Ultra-small surface mount package SOT-23 Dim. A A1 b c D E E1 e

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 ZENER DIODE FEATURES z Planar Die Construction z 300mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation

Z6 DIODE

Contextual Info: Zener Diode ctparts.com CTZ84C Series Not shown at actual size. 2.4V ~ 39V RoHS Compliant CHARACTERISTICS Description: SOT-23 Plastic-Encapsulated Zener Diode Features: Planar Die Construction. 350mW Power Dissipation. Zener Voltages from 2.4V ~ 39V. Ideally Suited for Automated

Contextual Info: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9100R3 MRF9100SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 ZENER DIODE FEATURES z Planar Die Construction z 300mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 SOT-23 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation

Transistor J182

Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA
Contextual Info: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these

Contextual Info: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

diode zener Z11

Abstract: Y415 Y6 ZENER DIODE C18 zener Zener diode z12 15 BZX84C2V4 BZX84C2V7 BZX84C3V0 BZX84C3V3 BZX84C3V9
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 SOT-23 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation