Z1 SOT89 Search Results

ro4003

Abstract: FPD1500SOT89 RO-4003 5.8ghz
Contextual Info: EB1500SOT89AJ FPD1500SOT89 5.2GHz TO 5.8GHz EVALUATION BOARD FEATURES • 26dBm Output Power • 10dB Gain ¥ 1.6dB Noise Figure @ 5V, 200mA ¥ 42dBm OIP3 ¥ SOT89 Surface Mount Package DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

c3v9

Abstract: c9v1 c5v6 BZV49 93 SOT89 c24 Zener c22 zener C8V2 c4v7 x5 sot89
Contextual Info: BZV49 SERIES ISSUE 4 - AUGUST 1996 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . Zener Voltage VZ at IZ=2mA Type VOLTS BZV49: Nom. BZV49 SERIES SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES Differential Resistance rZ at IZ=2mA Ω Temperature Coefficient SZ at IZ=2mA

CL10B104KONC

Abstract: AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK SGA-9289 Sirenza amplifier SOT-89 MCR03J200
Contextual Info: Design Application Note - AN022 SGA-9289 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the

Z550

Abstract: Fp2189 AVX 0603 MTBF
Contextual Info: FP2189 The Communications Edge TM Advanced Datasheet 1 Watt HFET Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description

AN022

Abstract: Stanford Microdevices 4 ghz MCH18 ML200C SGA-9289
Contextual Info: DESIGN APPLICATION NOTE - AN022 SGA-9289 Amplifier Application Circuits Abstract SGA-9289 Stanford Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. The amplifier is manufactured using the latest Silicon Germanium Heterostructure

C5V1

Abstract: C4V7 c24 zener BZV4 BZV49
Contextual Info: I SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES ISSUE 3 - NOVEMBER 1995 BZV49 SERIES O_ ' ABSOLUTE MAXIMUM RATINGS as per Electron Coc ing Sytem . PARAMETER SYMBOL Voltage Range Nominal Tolerance Maximum Forward Current Power Dissipation at Tamb=25“C

bzv49

Abstract: c4v3 c8v2 C3939
Contextual Info: SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES iSSUE 3 - NO VEM BER 1995 O ABSOLUTE MAXIMUM RATINGS as per Electron Coding Sytemj. PARAMETER SYMBOL Voltage Range V-, N om inal Tolerance C M axim um Forward Current Power Dissipation at Tamb=25'-'C VALUE I 3.9 to 43

CL10B104KONC

Abstract: MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK SGA-9189 Sirenza amplifier SOT-89 ECB-102216-B AN-021
Contextual Info: Design Application Note - AN021 SGA-9189 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9189 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the

IPC 6012

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 3, 8/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

135-869

Abstract: ML200C transistor a114 diagram
Contextual Info: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range

AVX 0603 MTBF

Abstract: high power FET transistor s-parameters FP2189 GETEK RF transistors with s-parameters FET transistors with s-parameters RF power transistors with s-parameters 115Z4 transistor z3
Contextual Info: FP2189 The Communications Edge TM Preliminary Product Information 1 Watt HFET Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package

SHF-0189

Abstract: SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet
Contextual Info: DESIGN APPLICATION NOTE - AN-031 SHF-0189 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 8, 2/2012 MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range

RF transistors with s-parameters

Abstract: 2.5 GHz RF power transistors with s-parameters 400 watt circuit diagram 51Z4 high power FET transistor s-parameters WJ transistor
Contextual Info: FP1189 The Communications Edge TM Advanced Datasheet ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description

Z5 1512

Contextual Info: Document Number: MMG3014NT1 Rev. 4, 8/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a general purpose amplifier that is internally input

Z5 1512

Abstract: M3014N 12065J0R2BS C0805C225J4RAC SOT89A C0603C119J5GAC ERJ-3GEY0R00V C0603C189J5GAC C0805C209J5GAC PCN13337
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input

Z5 1512

Abstract: C0805C209J5GAC
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 2, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input

transistor 4287 AB

Abstract: ML200DSS k 3116 transistor fet Rohm part marking Z7 Fp2189
Contextual Info: FP2189 The Communications Edge TM 1-Watt HFET Advanced Product Information Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTTF >100 Years Product Description Functional Diagram

MG271H

Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

Contextual Info: Document Number: MMG15241H Rev. 1, 4/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,

MG241H

Abstract: MMG15241HT1 GRM188R71H104KA93D ML200C GJM1555C1H100JB01D
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG15241H Rev. 1, 4/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,

GRM188R71H104KA93D

Abstract: MG241H mmg15241 GJM1555C1HR20BB01D GJM1555C1H1R0CB01D 0603CS-6N8XJLW GJM1555C1H100JB01D MMG15241HT1 GRM188RC1H560GA01D MMG15241H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG15241H Rev. 0, 12/2010 Enhancement Mode pHEMT Technology E-pHEMT MMG15241HT1 High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT - 89 standard plastic package. It is ideal for Cellular, PCS, LTE,

Contextual Info: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low