Z1 SOT89 Search Results

ro4003

Abstract: FPD1500SOT89 RO-4003 5.8ghz
Contextual Info: EB1500SOT89AJ FPD1500SOT89 5.2GHz TO 5.8GHz EVALUATION BOARD FEATURES • 26dBm Output Power • 10dB Gain ¥ 1.6dB Noise Figure @ 5V, 200mA ¥ 42dBm OIP3 ¥ SOT89 Surface Mount Package DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively

CL10B104KONC

Abstract: AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK SGA-9289 Sirenza amplifier SOT-89 MCR03J200
Contextual Info: Design Application Note - AN022 SGA-9289 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the

C5V1

Abstract: C4V7 c24 zener BZV4 BZV49
Contextual Info: I SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES ISSUE 3 - NOVEMBER 1995 BZV49 SERIES O_ ' ABSOLUTE MAXIMUM RATINGS as per Electron Coc ing Sytem . PARAMETER SYMBOL Voltage Range Nominal Tolerance Maximum Forward Current Power Dissipation at Tamb=25“C

CL10B104KONC

Abstract: MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK SGA-9189 Sirenza amplifier SOT-89 ECB-102216-B AN-021
Contextual Info: Design Application Note - AN021 SGA-9189 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9189 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the

IPC 6012

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 3, 8/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad

135-869

Abstract: ML200C transistor a114 diagram
Contextual Info: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range

AVX 0603 MTBF

Abstract: high power FET transistor s-parameters FP2189 GETEK RF transistors with s-parameters FET transistors with s-parameters RF power transistors with s-parameters 115Z4 transistor z3
Contextual Info: FP2189 The Communications Edge TM Preliminary Product Information 1 Watt HFET Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package

SHF-0189

Abstract: SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet
Contextual Info: DESIGN APPLICATION NOTE - AN-031 SHF-0189 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 8, 2/2012 MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range

RF transistors with s-parameters

Abstract: high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900
Contextual Info: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package

Z5 1512

Contextual Info: Document Number: MMG3014NT1 Rev. 4, 8/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a general purpose amplifier that is internally input

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 3, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input

Z5 1512

Abstract: C0805C209J5GAC
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 2, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3014NT1 Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input

MG271H

Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

Contextual Info: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low

SHF-0289

Abstract: MCH185CN102KK AN032 TMC1DB106KLRH AN-032 GaAs FET amplifer H H L C9 MCH185A390JK ML200C LL1608-FS4N7S
Contextual Info: DESIGN APPLICATION NOTE - AN-032 SHF-0289 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET

M3111N

Abstract: 22A114 irl 3710 m3111
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMH3111NT1 Rev. 4, 9/2012 Heterostructure Field Effect Transistor GaAs HFET MMH3111NT1 Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A,

MMH3111NT1

Abstract: HFET AN1955 ML200C 4988 CRCW06030000FKEA 50131
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMH3111NT1 Rev. 2, 4/2010 Heterostructure Field Effect Transistor GaAs HFET MMH3111NT1 Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMH3111NT1 Rev. 3, 1/2011 Heterostructure Field Effect Transistor GaAs HFET MMH3111NT1 Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A,

9972 GP

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3002NT1 Rev. 5, 8/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier The MMG3002NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A,

gyrator

Abstract: FMMT458 DIODE z1 MOSFET sot23-6 z1 sot23 ZVN4525 Z1 SOT89 ZVN4525E6 ZVN4525G ZVN4525Z
Contextual Info: Design Note 60 Issue 1 May 2001 Zetex High Voltage MOSFETS in Call Router Circuits A router is a device that receives data from a telephone line and decides which route the data should be sent. Routers are used extensively in computer networks. They are increasingly being

0603A102JAT2A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3002NT1 Rev. 5, 8/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3002NT1 Broadband High Linearity Amplifier The MMG3002NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A,

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3002NT1 Rev. 10, 2/2012 MMG3002NT1 Broadband High Linearity Amplifier The MMG3002NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A,

AFT504

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this