Z0 SOT23 Search Results

z0b07

Abstract: Z4618 z4843
Contextual Info: SEMITRON INDUSTRIES LTD M3E » • aiaîsas DDQOISS 8 H S L C B Z0/Z4 SERIES Hermetically Sealed Package ■Voltage Regulator Diode Released to BS 9305-F078 3 - 200 Volts ■Voltage Range 3VO to 400 Volts 1 Watt Steady State ■400 Watt Peak Power APPLICATIONS

SMPN7316

Abstract: DIODE Z0 031
Contextual Info: met SURFACE M O U N T SOT23 SMPN SERIES PIN DIODES FOR RF SW ITC H IN G A N D ATTENUATING CORPOI FEATURES Surface Mount Package Tape anc! Reel A vailable Reliability G old M etallized Chip Silicon Nitride/Glass Passivation Low Series Resistance Low Capacitance

BFQ 85

Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ marking code 359 sot-23 Q62702-F659 BFQ29P z0 SOT23
Contextual Info: NPN Silicon RF Transistor BFQ 29P ● For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ● CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type

Transistor BFR 97

Abstract: Transistor BFR 37 Q62702-F1051 Transistor BFR 98
Contextual Info: NPN Silicon RF Transistor BFR 93P ● For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

45256

Abstract: IC 4090 KGF1256P 56728
Contextual Info: ODRKGF1256P-03 Electronic Components KGF1256P Issue Date:Jan 20, 2006 Medium-Power Amplifier GENERAL DESCRIPTION The KGF1256P is a medium-power IC, with frequency ranging from the UHF-band to the L-band that features high output power, low noise, and low current operation. The KGF1256P specifications are guaranteed to a

VGD15

Abstract: 56728 KGF1256P
Contextual Info: ODRKGF1256P-01 Electronic Components KGF1256P Issue Date:Dec 22, 2003 Preliminaly Medium-Power Amplifier GENERAL DESCRIPTION The KGF1256P is a medium-power IC, with frequency ranging from the UHF-band to the L-band that features high output power, low noise, and low current operation. The KGF1256P specifications are guaranteed to a fixed

Transistor BFR

Abstract: Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93
Contextual Info: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

RF mixer L-Band

Abstract: T4 3570 KGF1531P t4 and 3570 9746 using 7910 im3 GC510 Z0100 3570 1321
Contextual Info: ODRKGF1531P-01 Electronic Components KGF1531P Issue Date:Sep 30, 2003 Dual Gate IC GENERAL DESCRIPTION The KGF1531P is a high-performance GaAs FET small-signal dual gate mixer for the L-band frequencies that feature features low voltage operation, low current operation, high conversion gain, and low distortion. The

Transistor BFR 93

Abstract: Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35
Contextual Info: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFR 965

Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705
Contextual Info: NPN Silicon RF Transistor BFR 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

spice germanium diode

Abstract: SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100
Contextual Info: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 S-parameter definitions 7 Equivalent package designators 8 Transistor ratings 8 Thermal considerations 11 Power derating curves for SMDs Power derating curve for SOT23

1B60

Abstract: AT31011
Contextual Info: Whpïï mitiM H EW LETT PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011:0.9 dB NF, 13 dB GA

sot 86 marking CODE e3

Contextual Info: f ï ^ l HEW LETT WFnÆP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Perform ance Bipolar T ransistor Optim ized for Low Current, Low Voltage O peration • 900 MHz Performance:

AT-30533

Contextual Info: ÏÏS S i HEWLETT mLEM P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

MARKING CODE 618 SOT23

Abstract: MARKING WR2 SOT-23 BFR93AW-GS08 BFR93AG MARKINGWR2SOT-23
Contextual Info: Not for new design, this product will be obsoleted soon BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component

Contextual Info: W m H EW L E T T rnüCM PA CK A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

BFR93AW-GS08

Abstract: 732 774 047 B 1359 BFR93A application board BFR93AW S parameters of BFR93AR GHz transistor BFR93A BFR93AR 682 SOT23 MARKING 85035
Contextual Info: BFR93A/BFR93AR/BFR93AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 Features • • • • • SOT23 High power gain High transition frequency e3 Low noise figure Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Transistor BFR

Abstract: Transistor BFR 191 Transistor BFR 39 BFR 67
Contextual Info: BFR 35AP NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. C ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type M arking Ordering code

MAX7248

Abstract: AAIU
Contextual Info: 19-2119; Rev 1; 10/01 Standard Definition Video Reconstruction Filters and Buffers Features ♦ Ideal for CVBS, Y/C S-Video , and RGB (Y Pb Pr) Outputs for NTSC, PAL, and SDTV ♦ 6th-Order Lowpass Filter ♦ Drives Two 150Ω Video Loads ♦ Four Levels of Passband High-Frequency

encoder 10k

Abstract: MAX7432 MAX7432EUD MAX7428 MAX7428EKA-T MAX7430 MAX7430EUB MAX7248 AAIU
Contextual Info: 19-2119; Rev 1; 10/01 Standard Definition Video Reconstruction Filters and Buffers Features ♦ Ideal for CVBS, Y/C S-Video , and RGB (Y Pb Pr) Outputs for NTSC, PAL, and SDTV ♦ 6th-Order Lowpass Filter ♦ Drives Two 150Ω Video Loads ♦ Four Levels of Passband High-Frequency

Field-Effect Transistors

Abstract: Transistors General smd sot343
Contextual Info: Product specification Philips Semiconductors Small-signal Field-effect Transistors General section S-PARAMETER DEFINITIONS Measurement The S-parameter symbols in this section are based on IEC publication 747-7. The return losses are measured with a network analyzer

LMH6559

Abstract: SNOSA57C CLC730245 CLC730136
Contextual Info: LMH6559 www.ti.com SNOSA57C – APRIL 2003 – REVISED MARCH 2013 LMH6559 High-Speed, Closed-Loop Buffer Check for Samples: LMH6559 FEATURES DESCRIPTION • • • • • • • The LMH6559 is a high-speed, closed-loop buffer designed for applications requiring the processing of

Contextual Info: LMH6559 www.ti.com SNOSA57C – APRIL 2003 – REVISED MARCH 2013 LMH6559 High-Speed, Closed-Loop Buffer Check for Samples: LMH6559 FEATURES DESCRIPTION • • • • • • • The LMH6559 is a high-speed, closed-loop buffer designed for applications requiring the processing of