Z0 150 79 Search Results

BFQ71

Abstract: Q62702-F775 bfq 96
Contextual Info: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.

z0 150 81

Abstract: transistor s11 s12 s21 s22 Q62702-F774 bfq 85
Contextual Info: NPN Silicon RF Transistor BFQ 70 For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ● Hermetically sealed ceramic package ● HiRel/Mil screening available. ● ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFQ72

Abstract: Q62702-F776 s parameters transistor ac 151
Contextual Info: NPN Silicon RF Transistor BFQ 72 ● For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Q62702-F788

Contextual Info: NPN Silicon RF Transistor BFQ 74 ● For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available.

KGF1191

Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0016-38-71 ¡ electronic components KGF1191 ¡ electronic components KGF1191 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1191 is a two-stage small-signal amplifier, with frequencies ranging from the UHF-band

1254

Abstract: KGF1254 KGF1254B
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0023-38-71 ¡ electronic components KGF1254B/1254 ¡ electronic components KGF1254B/1254 Medium-Power Amplifier GENERAL DESCRIPTION The KGF1254B is a medium-power amplifier, with frequencies ranging from the UHF-band to

KGF1254

Abstract: KGF1254B 1254B
Contextual Info: ¡ electronic components KGF1254B/1254 ¡ electronic components KGF1254B/1254 Medium-Power Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1254B is a medium-power amplifier, with frequencies ranging from the UHF-band to the L band, that features high output power, low noise, and low current dissipation. The

KGF1284

Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0027-38-72 ¡ electronic components KGF1284 ¡ electronic components KGF1284 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1284, housed in a SOT-89 type plastic-mold package, is a discrete power FET with

Contextual Info: NB3N106K 3.3V Differential 1:6 Fanout Clock Driver with HCSL Outputs Description The NB3N106K is a differential 1:6 Clock fanout buffer with High−speed Current Steering Logic HCSL outputs optimized for ultra low propagation delay variation. The NB3N106K is designed

SIT9002A

Abstract: SIT9002
Contextual Info: SiT9102 LVPECL / HCSL / LVDS / CML 1 to 220 MHz High Performance Oscillator Features Benefits • Extremely low RMS phase jitter random • <1 ps (typical) • Wide frequency range • 1 MHz to 220 MHz • 220 MHz to 800 MHz refer to SiT9107 • High frequency stability

KGF1522

Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0019-38-71 ¡ electronic components KGF1522 ¡ electronic components KGF1522 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1522 is a high performance GaAs FET small-signal amplifier for L-band frequencies that

pj+939+lv

Abstract: SIT9002
Contextual Info: SiT9102 LVPECL / HCSL / LVDS / CML 1 to 800 MHz High Performance Oscillator Features Benefits • Extremely low RMS phase jitter random • <1 ps (typical) • Wide frequency range • 1 MHz to 220 MHz • 220 MHz to 800 MHz (contact SiTime) • High frequency stability

sit9102

Abstract: sit9102a SIT9102AC SIT9002
Contextual Info: SiT9102 LVPECL / HCSL / LVDS / CML 1 to 220 MHz High Performance Oscillator Features Benefits • Extremely low RMS phase jitter random • <1 ps (typical) • Wide frequency range • 1 MHz to 220 MHz • 220 MHz to 800 MHz refer to SiT9107 • High frequency stability

SIT9002

Contextual Info: SiT9102 LVPECL / HCSL / LVDS / CML 1 to 800 MHz High Performance Oscillator Features Benefits • Extremely low RMS phase jitter random • <1 ps (typical) • Wide frequency range • 1 MHz to 220 MHz • 220 MHz to 800 MHz (contact SiTime) • High frequency stability

A856

Abstract: MAX3752 MAX3752CCM
Contextual Info: 19-1701; Rev 2; 2/01 2.125Gbps, 3.3V Quad-Port Bypass with Repeater _Applications Features ♦ Four High-Speed Data Ports ♦ Meets Fibre Channel Jitter Tolerance Requirements ♦ Large Output Signal Swing >1000mVp-p ♦ +3.0V to +3.6V Single-Supply Voltage

AT415

Contextual Info: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga

NB4N121K

Abstract: NB4N121KMN NB4N121KMNG QFN-52 QFN 8x8 tray
Contextual Info: NB4N121K 3.3V Differential In 1:21 Differential Fanout Clock Driver with HCSL level Output http://onsemi.com Description The NB4N121K is a Clock differential input fanout distribution 1 to 21 HCSL level differential outputs, optimized for ultra low propagation delay variation. The NB4N121K is designed with HCSL

UPA831TF

Abstract: NE681 NE68130 NE856 NE85630 S21E UPA831TF-T1 UPA834TF 7371 802 transistor on 4409
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA 2.1 ± 0.1 1.25 ± 0.1 HIGH GAIN: Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA •

OF IC 7912

Abstract: pt 9795 on 5295 transistor nec 14312 transistor UPA831TF lb 11885 NE681 NE68130 NE856 S21E
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Package Outline TS06 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA

1B60

Abstract: AT31011
Contextual Info: Whpïï mitiM H EW LETT PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011:0.9 dB NF, 13 dB GA

po111

Abstract: KGF1522 CB 0925
Contextual Info: ¡ electronic components KGF1522 ¡ electronic components KGF1522 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1522 is a high-performance GaAs FET small-signal amplifier for L band frequencies that features low-voltage operation, low-current dissipation, low noise, and low distortion. The

KGF1156

Abstract: 7668
Contextual Info: ¡ electronic components KGF1156 ¡ electronic components KGF1156 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1156 is a small-signal UHF-band amplifier that features high output power, high gain, low noise, and low current dissipation. The KGF1156 specifications are guaranteed by the fixed

marking TN

Abstract: transistor c 5083 2SC5186 2SC5436
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ± 0.05 (1.4 mm x 0.8 mm × 0.59 mm: TYP.)

5252 F 1005

Abstract: 5252 F 1114 UPA836TF NE685 NE688 S21E UPA833TF UPA836TF-T1 5942
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Package Outline TS06 2.1 ± 0.1 Q2:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA