Z0 150 79 Search Results

transmission lines Twisted Pair spice model

Abstract: MMBD701 Twisted Pair split termination 100EP MBD301 MBD701 MC10EP16 MMBD301 diode z01
Contextual Info: AND8020/D Termination of ECL Devices with EF Emitter Follower OUTPUT Structure Prepared by: Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE CONTENTS OF APPLICATION NOTE Introduction − DC Termination Analysis

BFQ71

Abstract: Q62702-F775 bfq 96
Contextual Info: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.

z0 150 81

Abstract: transistor s11 s12 s21 s22 Q62702-F774 bfq 85
Contextual Info: NPN Silicon RF Transistor BFQ 70 For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ● Hermetically sealed ceramic package ● HiRel/Mil screening available. ● ESD: Electrostatic discharge sensitive device, observe handling precautions!

Transistor BFR

Abstract: Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93
Contextual Info: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFQ72

Abstract: Q62702-F776 s parameters transistor ac 151
Contextual Info: NPN Silicon RF Transistor BFQ 72 ● For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!

ac 0624 transistor 17-33

Abstract: transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060
Contextual Info: NPN Silicon RF Transistor BFP 193 ● For low-noise, high-gain amplifiers up to 2 GHz. ● For linear broadband amplifiers. ● Power amplifier for DECT and PCN systems ● fT = 8 GHz F = 1.2 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

Transistor BFR 93

Abstract: Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35
Contextual Info: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Q62702-F788

Contextual Info: NPN Silicon RF Transistor BFQ 74 ● For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available.

KGF1191

Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0016-38-71 ¡ electronic components KGF1191 ¡ electronic components KGF1191 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1191 is a two-stage small-signal amplifier, with frequencies ranging from the UHF-band

ferroxcube 56-590-65

Abstract: MRF8372 equivalent macro-X ceramic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Pow er Transistor MRF837 MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics

FAR-G5EE-942M50-Y2FD

Contextual Info: FUJITSU MEDIA DEVICES LIMITED Customer Name Standard Specification System EGSM/GSM850-Rx 50/150ohm DATE FMD Part Number FAR-G5EE-942M50-Y2FD Version 1.1db Sep. 22, 2003 Electrical Specification(Filter 1) Passband : 925 ~ 960 MHz Condition Item Specification

C214P

Abstract: KGF1191 CB 0925 C107P cc 3061
Contextual Info: J2Q0016-38-71 作成：1998年 7月 ¡ 電子部品 KGF1191 l 前回作成：1998年 1月 KGF1191 小信号アンプ n 概要 KGF1191は低電圧、低電流動作、高利得、高アイソレーションを特長とするUHF帯からL帯用の 小信号2段アンプです。

ECC-D3D

Abstract: eccd3A panasonic cap 4.7 ECCD3
Contextual Info: Panasonic Ceramic Disc Capacitors High Voltage High Voltage Ceramic Disc Capacitors, Rated 1 to 3 kVDC, Temp. Char. SL/GP • Features • W ide o pe ra ting te m p e ra tu re range: - 2 5 to 105 'C • Low loss at w ide frequency range and stable against

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

1254

Abstract: KGF1254 KGF1254B
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0023-38-71 ¡ electronic components KGF1254B/1254 ¡ electronic components KGF1254B/1254 Medium-Power Amplifier GENERAL DESCRIPTION The KGF1254B is a medium-power amplifier, with frequencies ranging from the UHF-band to

KGF1254

Abstract: KGF1254B 1254B
Contextual Info: ¡ electronic components KGF1254B/1254 ¡ electronic components KGF1254B/1254 Medium-Power Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1254B is a medium-power amplifier, with frequencies ranging from the UHF-band to the L band, that features high output power, low noise, and low current dissipation. The

KGF1284

Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0027-38-72 ¡ electronic components KGF1284 ¡ electronic components KGF1284 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1284, housed in a SOT-89 type plastic-mold package, is a discrete power FET with

Contextual Info: CONFIDENTIAL FUJITSU MEDIA DEVICES LIMITED Customer Name Standard Specification System EGSM/GSM850-Rx 50/150ohm DATE Sep. 22, 2003 FMD Part Number FAR-G5EE-942M50-Y2FD Version 1.1db Preliminary Electrical Specification(Filter 1) Passband : 925 ~ 960 MHz Condition

421-6 MAG

Abstract: KGF1284 7589 rfc60
Contextual Info: J2Q0027-38-72 作成：1998年 7月 KGF1284 l 前回作成：1998年 1月 ¡ 電子部品 KGF1284 パワーFET（プラスチックタイプ） n 概要 KGF1284は高効率、高出力電力、高利得を特長とする、SC-62型プラスチックパッケージに実装

Contextual Info: NB3N106K 3.3V Differential 1:6 Fanout Clock Driver with HCSL Outputs Description The NB3N106K is a differential 1:6 Clock fanout buffer with High−speed Current Steering Logic HCSL outputs optimized for ultra low propagation delay variation. The NB3N106K is designed

SIT9002A

Abstract: SIT9002
Contextual Info: SiT9102 LVPECL / HCSL / LVDS / CML 1 to 220 MHz High Performance Oscillator Features Benefits • Extremely low RMS phase jitter random • <1 ps (typical) • Wide frequency range • 1 MHz to 220 MHz • 220 MHz to 800 MHz refer to SiT9107 • High frequency stability

Contextual Info: NB4N111K 3.3V Differential In 1:10 Differential Fanout Clock Driver with HCSL Level Output http://onsemi.com Description The NB4N111K is a differential input clock 1 to 10 HCSL fanout buffer, optimized for ultra low propagation delay variation. The NB4N111K is designed with HCSL clock distribution for FBDIMM

NB4N111KMNG

Abstract: NB4N111KMNR4G QFN32 488AM
Contextual Info: NB4N111K 3.3V Differential In 1:10 Differential Fanout Clock Driver with HCSL Level Output http://onsemi.com Description The NB4N111K is a differential input clock 1 to 10 HCSL fanout buffer, optimized for ultra low propagation delay variation. The NB4N111K is designed with HCSL clock distribution for FBDIMM

QFN-24

Abstract: QFN24 4*4 qfn24 socket
Contextual Info: NB3N106K 3.3V Differential 1:6 Fanout Clock and Data Driver with HCSL Outputs Description http://onsemi.com The NB3N106K is a differential 1:6 Clock and Data fanout buffer with High−speed Current Steering Logic HCSL outputs optimized for ultra low propagation delay variation. The NB3N106K is designed