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1G NAND flash

Abstract: F59L1G81A F59L
Contextual Info: ESMT F59L1G81A Operation Temperature Condition -40°C~85°C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit

"3528-21" footprint

Abstract: LSR220 LSR33 LSR15 "3528-12" footprint footprint 6032-15 eia 3216-18 footprint
Contextual Info: LSR nemco Low Profile Surface Mount Tantalum Capacitors Low Profile - Low ESR Low Profile 1.2 mm to 2.0 mm FEATURES z z z z z z Lead-free, RoHS compliant z z z z z z z z Capacitance range: 1.0 µf to 220 µf Low Profile Heights. Excellent for PCMCIA applications.

NAND Flash

Abstract: F59L1G81A
Contextual Info: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes

F59L1G81A

Contextual Info: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes

Contextual Info: LSR Low ESR Surface Mount Tantalum Capacitors nemco Low ESR FEATURES z Lead-free, RoHS compliant z z z z z z z z z z z z z Very Low Equivalent Series Resistance ESR , Ideal for Power Supplies High ripple and surge current capability Meets or exceeds EIA 535 BAAC and IECQ standards (QC300801/US0001, IS - 28)

Contextual Info: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Oct. 2006 Revision : 1.0 1/30 ESMT M52S32162A SDRAM 1M x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z

Contextual Info: ESMT F49L320UA/F49L320BA 2F Flash 32 Mbit (4M x 8/2M x 16) 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z z z Single supply voltage 2.7V-3.6V Fast access time - Random access time: 70/90 ns - Page access times: 30ns z 4,194,304x8 / 2,097,152x16 switchable by BYTE pin

eia 3216-18 footprint

Abstract: "3528-21" footprint 3528 footprint 7361 LSR220 LSR33 3528-12 footprint footprint 6032-15
Contextual Info: LSR nemco Low Profile Surface Mount Tantalum Capacitors Low ESR Low Profile Surface Mount Tantalum Capacitors Low Profile 1.2 mm to 2.0 mm FEATURES z z z z z z z z z z z z z Low Profile Heights. Excellent for PCMCIA applications. Very Low Equivalent Series Resistance ESR , Ideal for Power Supplies

0.65mm pitch BGA

Abstract: M52S16161A M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG EsmtM52S16161A
Contextual Info: ESMT M52S16161A Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3

Mobile SDRAM

Abstract: M52D32162A
Contextual Info: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3

M52S32162A

Contextual Info: ESMT M52S32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3

Mobile SDRAM

Abstract: BGA-60 M52D16161A-10TG2J
Contextual Info: ESMT M52D16161A 2J Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 )

Mobile SDRAM

Contextual Info: ESMT M52S16161A 2J Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 )

M52D32162A

Contextual Info: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3

M52S32162A

Abstract: MAKING A10 BGA
Contextual Info: ESMT M52S32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3

CKE 2009

Contextual Info: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D32162A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 16 bits, fabricated with high performance CMOS

Contextual Info: ESMT M52L32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52L32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.

Contextual Info: ESMT M52D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology.

Contextual Info: ESMT M52S32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52S32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.

Contextual Info: ESMT M52D32321A Revision History : Revision 1.0 Nov. 02, 2006 -Original Elite Semiconductor Memory Technology Inc. Publication Date : Nov. 2006 Revision : 1.0 1/29 ESMT M52D32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z

M52D16161A

Contextual Info: ESMT M52D16161A Operation Temperature Condition -40°C~85°C Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs

MAKING A10 BGA

Abstract: M52D32162A
Contextual Info: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D32162A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 16 bits, fabricated with high performance CMOS

Contextual Info: ESMT M52D32321A Mobile SDRAM 512K x 32Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.

M52D32321A

Contextual Info: ESMT M52D32321A Mobile SDRAM 512K x 32Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.