Z 47A Search Results

Contextual Info: 600W Surface Mount Transient Voltage Suppressor P6SMBJ6.8A~250CA 600W Surface Mount Transient Voltage Suppressor SMB Features z z z z z z Breakdown voltage from 6.8 to 250 volts Low inductance, excellent clamping capability Repetition rate duty cycle : 0.01%

27C Transient Suppressor

Abstract: 6v8a 6V8* smb P6SMB15CA diode 47c marking code 82A P6SMB10A P6SMB11A SMB 600W P6SMB250CA
Contextual Info: 600W Surface Mount Transient Voltage Suppressor P6SMB6.8A - P6SMB250CA 600W Surface Mount Transient Voltage Suppressor SMB Features z z z z z z Breakdown voltage from 6.8 to 250 volts Low inductance, excellent clamping capability Repetition rate duty cycle : 0.01%

27C Transient Suppressor

Abstract: 51C MARKING code 6v8a diode 6v8a P4SMA250CA diode 47c marking code 27c marking code 82A P4SMA10A P4SMA11A
Contextual Info: 400W Surface Mount Transient Voltage Suppressor P4SMA6.8A - P4SMA250CA 400W Surface Mount Transient Voltage Suppressor SMA Features z z z z z z Breakdown voltage from 6.8 to 250 volts Low inductance, excellent clamping capability Repetition rate duty cycle : 0.01%

Contextual Info: 400W Surface Mount Transient Voltage Suppressor P4SMAJ6.8A~250CA 400W Surface Mount Transient Voltage Suppressor SMA Features z z z z z z Breakdown voltage from 6.8 to 250 volts Low inductance, excellent clamping capability Repetition rate duty cycle : 0.01%

1n53838

Abstract: BZV48C ZENER 1N4 BZY97-C2V7 ZENER 1N5 BZX61 Z500-1 BZV40C ZX85C Z500-21
Contextual Info: ZENER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1/4 M 2 .4 A Z 10 1/4 M 2 .7 A Z 10 1/4 M 3 .0 A Z 10 1/4 M 3 .3 A Z 10 1/4 M 3 .6 A Z 10 1/4 M 3 .6 A Z 10 1/4 M 3 .9 A Z 10 1/4 M4 .3 A Z 10 1/4 M4 .7 A Z 10 1/4 M 5.1 A Z 10 1/4 M5 .6 A Z 10 1/4 M6 .2 A Z 10

PZ56A

Abstract: IN3324 IN3335 IN3308B PZ10B PZ10BR diodes de regulation de tension 1N3307 PZ82A PZ47A
Contextual Info: 24 DIODES DE RÉGULATION DE TENSION zener diodes Ps TYPES 10 W 10 ms 'Z M W (mA) tcase = 75°C / *V ZT (V) nom min t(vj) = 150°C max 'Z T rZT max 'Z K (mA) (Î2) (mA) cathode au boitier type + suffixe R : anode au boitier rZ K max (fi) <*t (10-“ /oC)

A273

Abstract: AD S98 M68HC16 MC68HC16Z1 MC68HC16Z2
Contextual Info: MOTOROLA SEMICONDUCTOR Order this document by: M68HC16ZEC20/D TECHNICAL DATA M68HC16 Z Series Technical Supplement 20.97 MHz Electrical Characteristics Devices in the M68HC16 Modular Microcontroller Family are built up from a selection of standard functional modules. Microcontrollers in the M68HC16 Z Series contain the same central processing

Contextual Info: XHHHHtW' M W »m m m W \\\ \\\\ \\W î W NtiW N« A \\\\\W / i» §§§ ^ ^ ^ ^ / 'S » f r^ t Z Z ~ MMICONDUCTOR AS2945/46/47 Excellence in Analog Power Products 500mA Low Drop Out Voltage Regulator with Shutdown PRELIMINARY INFORMATION FEATURES APPLICATIONS

smd marking code cev

Abstract: 5962-8976404MYA qml-38535 5962-8976408MYA GDIP1-T48
Contextual Info: REVISIONS LTR DESCRIPTION DATE A Clarify test conditions for VD R , tQQD R , tQ Dp , and t R in table I. Add case outline Z. Add CAGE 61772 as source of supply fo r case outline Z. Update to new boilerplate. Editorial changes throughout. - jdb APPROVED y r - m o -d a

RZ18B

Abstract: RZ39A RZ47A RZ15A RZ12BR
Contextual Info: STC D I S G S— THOMSON 7 ^ 2 3 7 QÜÜSSQQ 4 f ? ^ 590 02500 O D T H O M S O N -C S F R Z 6 A DIVISION SEMICONDUCTEURS — R Z 18B . • ZENER DIODES DIODES ZENER 50 W silicon Zener diodes : • • • Hermetically sealed metal according to normalization CCTU : F 10'and JEDEC DO-5.

H-17

Abstract: SM16GZ47 SM16GZ47A SM16JZ47 SM16JZ47A SM16JZ47 equivalent
Contextual Info: — • fl- ï& E !# - * S M 16 ’ G , J j 2 4 7 TT-7 159 — * 2 1 3 - 1O H 1A o > ') 3 16A o f e » E & # ; f 7 ‘t r ± _ h # $ o f ê & l f i t ( A C 1500, M Í I W W 1É ìov./^s ili! l# | H j) ■ * * £ & £ S M 16G Z 47 S M 16J Z 47 400 600 #

NEh jJ8

Abstract: k30270 LB 11911 095275-VK20BA ue09 KM 7-C 1 UF -20 100V 74S83 S0807 74LS32N z3ans
Contextual Info: R E V IS IO N S DESCRIPT'ON » * * LTR MARK AM*« P iK PXÛC1S1 Z v cmpcz procgsz z. 2 PL J L MARK PEU PE0C£5S J p 6 H A A # i WAS 9?Z7£9-toZW E 6 m * T £ D * £ / i £ r £ t d i0 £ # i/ tty * * ¡è k w - ¿ A J 4 0 1 6 9 / & J / O / i. — to * D D £ D

MC68HC16Z1

Abstract: M68HC16 MC68HC16Z2
Contextual Info: Freescale Semiconductor, Inc. Order this document by: M68HC16ZEC20/D M68HC16 Z Series Technical Supplement 20.97 MHz Electrical Characteristics Freescale Semiconductor, Inc. Devices in the M68HC16 Modular Microcontroller Family are built up from a selection of standard

HA7-5147-2

Abstract: HA3-5147-5
Contextual Info: HA-5147, HA-5147A 120M H z, Ultra-Low Noise Precision O perational A m plifiers juiy 1997 Features Description • S lew R a t e .35V /^s The HA-5147 operational amplifier features an unparalleled

CPV362MU

Contextual Info: International ËüRectffier iGBTs UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency/— Optimized for Pow er Conversion UltraFast •c Part Number V CES Collector to Emitter Voltage Majt VcE(on) Collector to Emitter

Q67060-S6000-A2

Abstract: P-TO220-5-62 S6008 VPT05166 Thyristor to220 Q67060-S6003 Q67060-S6003-A2
Contextual Info: BTS 244 Z Speed TEMPFET  • N-Channel • Enhancement mode • Logic Level Input 1 • Analog driving possible 5 • Fast switching up to 1 MHz VPT05166 • Potential-free temperature sensor with thyristor characteristics • Overtemperature protection

DIODE smd marking Ak

Contextual Info: BTS 244 Z Speed TEMPFET  • N-Channel • Enhancement mode 1 • Logic Level Input 1 • Analog driving possible 5 • Fast switching up to 1 MHz VPT05166 5 VPT05165 • Potential-free temperature sensor with thyristor characteristics • Overtemperature protection

Contextual Info: z g i't » H Selection Chart S e r ie s 47A 47B 47C 47D Page N um ber G-4 G-10 G-15 G-18 S iz e Miniature Miniature Sub-Miniature Sub-Miniature C ir c u it r y SPOT, DPDT, 3PDT, 4PDT SPDT, DPDT, 3PDT SPDT, DPDT SPDT, DPDT M a x C o n t a c t R a tin g 5A 5A

TO39 package

Abstract: "TO-39 package" sd220 s0220 SD220HD SD221HD XSD220 XSD221 SD221
Contextual Info: 4flE » SD2201SD221 CALOGIC CORP 10 44322 0 0 Ü 0247 2 m C G C caloric High Speed Analog N-Channel Enhancement-Mode DMOS Power FETs CORPORATION V T S S - Z .5 SD220/SD221 FEATURES DESCRIPTION: • Fast Sw

BTS 244-Z

Abstract: GPT05165 GPT05166 P-TO220-5-62 Q67060-S6000-A2 VPT05166
Contextual Info: BTS 244 Z Speed TEMPFET 
N-Channel
Enhancement mode
Logic Level Input 1
Analog driving possible 5
Fast switching up to 1 MHz VPT05166
Potential-free temperature sensor with thyristor characteristics
Overtemperature protection
Avalanche rated

T-LVA62A

Abstract: diode zl 8.2 diode zl 82 diode zener ZL 1
Contextual Info: Æ 7 SGS-THOMSON ^ 7# noigKQiLiOTiiiiiiiiei GENERAL PURPOSE & INDUSTRIAL ZENER DIODES LOW VOLTAGE AVALANCHE ZENER DIODES 400 mW / Tamb = 25°C Tj max = 175°C general purpose series Type rZT 1*ZT 'ZT V Z T 'IZ T Noise Density Vr 'R @ 250 nom Package max ÎÎ

A7910

Contextual Info: TDB7910 TDA7910 F Z 7 SG S-1H 0M S0N * 7 #» 5SlD g[S IILi(gTO [(!!IO(gi MEDIUM POWER SINGLE BIPOLAR OPERATIONAL AMPLIFIER . • . . . OUTPUT CURRENT UP TO 500 mA OFFSET VOLTAGE NULL CAPABILITY SHORT-CIRCUrT PROTECTION THERMAL OVERLOAD PROTECTION PLASTIC PACKAGE FOR EASY ASSEMBLY

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Low S kew CMOS PLL C lock Drivers, 3 -S tate 55, 70, 100, 133 and 160M H z Versions The MC88915T Clock Driver utilizes phase-locked loop technology to lock its low skew outputs’ frequency and phase onto an input reference

Contextual Info: HA-5147, HA-5147A 120M H z, U ltra-Low Noise Precision O perational Am plifiers November 1996 Features Description • Slew R a t e . 35V/ns T he H A -5 14 7 o p era tiona l am p lifie r fea tu res an unparalleled