Y7C245 Search Results

dh 1R

Contextual Info: WS57C45 x HIGH-SPEED 2K 8 REGISTERED CM OS PR O M /RPRO M KEY FEATURES Ultra-Fast Access Tim e • DESC SMD Nos. 5 9 6 2 -8 8 7 3 5 /5 9 6 2 -8 7 5 2 9 — 2 5 n s S e tu p — • Pin C om patib le w ith A M 27S 45 and C Y7C245 12 n s C lo c k to O u tp u t

CY7C245-35DMB

Abstract: 35zm marking AFI WS57C45-35KMB 5962-8873501LX CY7C245-45DMB WS57C45-45KMB CY7C245 CY7C245-35
Contextual Info: D ESC FO RM 193 » U S GOVERNMENT PRINTING OFFICE 1967 — 748129/60911 5962— £1417 D ISTR IB U TIO N STA TEM EN T A. Approved lor public release; distribution is unlim ited. 1. SCOPE 1.1 Scope. This drawing describes device requirements fo r c la s s B m icro c irc u its in accordance

CERAMIC LEADLESS CHIP CARRIER

Abstract: la crosse technology smd UJ 99 7C245A CY7C245A 0G152
Contextual Info: W CYPRESS Features • • W indowed for reprogram m ability • C M O S for optim um speed/power • • • H igh speed — 15-ns ad dress set-up • — 10-ns clock to output • Low power — 330 m W com m ercial for —25 ns — 660 mW (m ilitary) •

Contextual Info: Y7C245A CYPRESS SEMICONDUCTOR R eprogram m able 2048 x 8 R egistered P R O M Features • W indowed for reprogramm ability • C M O S for optimum speed/pow er • H igh speed — 15 ns max set-up — 10 ns clock to output • Low power — 330 mW com m ercial for

aS3131

Abstract: u2331
Contextual Info: Y7C245A P YP: V « *1 i. X - 2K x 8 Reprogrammable Registered PROM Features Functional Description • Windowed for reprogrammability • CMOS for optimum speed/power The Y7C245A is a high-performance, 2K x 8, electrically pro­ grammable, read only memory packaged in a slim 300-mil

57C45

Contextual Info: WS57C45 HIGH-SPEED 2Kx 8 REGISTERED CMOS PROM/RPROM KEY FEATURES • DESC SMD Nos. 5962-88735/5962-87529 • Pin Compatible with AM27S45 and Y7C245 • Immune to Latch-UP • Ultra-Fast Access Time — 25 ns Setup — 12 ns C lock to O utput • Low Power Consumption

lc 245a

Abstract: DIODE SMD 10 - 25L DIODE SMD 10 25L 7C245A 7c245
Contextual Info: Y7C245A •= CYPRESS • 5V ± 10% V c, commercial and military • I I I.-compatible I/O • Direct replacement for bipolar PROMs • Capable of withstanding greater than 2001V static discharge F e a tu re s • Windowed for reprogrammability • CMOS for optimum speed/power

82S641

Abstract: 27C49 27S291 SS1203 N82S191N signetics 82hs641 665C/X-DELTA
Contextual Info: PROM/RPROM CROSS REFERENCE AMD WSI NATIONAL WSI AM 27C49 AM 27C191 AM 27C291 AM 27PS43 A M 2 7 S4 3 AM 27S43A A M 2 7 S4 5 A M 2 7 S4 9 A M 27S51 AM 27S51A AM 27S191 AM 27S291 W S57C49C W S57C291C W S57C291C W S57C43C W S57C43C W S57C43C W S5 7 C 4 5 W S57C49C

b8550

Abstract: CY7C245-45DMB CY7C245-35DMB 5962-8873501LX OMO48444 WS57C45-45KMB CY7C245 cypress mil-std-883 prom
Contextual Info: DESC FORM 193 SEP 87 D IS T R IB U T IO N S T A T E M E N T A. , u s g o v c rn m e n t p u n t in g o ffice : i9S7 — 7 « a i2 9 /6 0 » n 5962 — 1:1417 A p p r o v e d lo r p u b lic r e le a s e ; d is t r ib u t io n i s u n lim ite d . 1. SCOPE 1.1 Scope. T h is drawing d e scrib e s device requirements fo r c la s s B m ic ro c irc u its in accordance