Y531 Search Results

Contextual Info: H Y531000A H Y U N D A I SEMICONDUCTOR S e r ie s 1M x 1-bit CMOS DRAM DESCRIPTION The Y531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The Y531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

ic 7493 block diagram

Contextual Info: Y531OOOA Series HYUNDAI 1M X 1 -b it CMOS DRAM DESCRIPTION The Y531 OOOA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The Y531 OOOAutilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

EIA 549 Class 130B transformer

Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
Contextual Info: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.

transistor f422 equivalent

Abstract: transistor f422 F913 F422 transistor H49-M97 y205 TBB 469 F521-F523 0256C g0641
Contextual Info: NEC CB-C9 Family Design Manual June 1996 Document No. A10927EU1V0UM00 Copyright 1996 NEC Electronics Inc. All Rights Reserved b 4 Ë 75 E 5 0063Û Û1 7 b l NEC CB-C9 Family Design Manual Document Number A10927EU1V0UM00 Revision History Preliminary Release On-Line - June 1996