Y11 TRANSISTOR Search Results

m8050

Abstract: y11 transistor M8050-TRANSISTOR transistor y11 sot-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8050 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M8050 SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

M8050

Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11

M8050

Abstract: m8050 NPN equivalent M8050 equivalent
Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11

g21 Transistor

Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor
Contextual Info: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

CA3102

Abstract: CA3102E CA3102M MS-012-AB
Contextual Info: CA3102 Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which

CA3102

Abstract: CA3102E CA3102M MS-012-AB diode b22 L 321 t
Contextual Info: CA3102 TM Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which

BF747

Abstract: MBB400 sot23-4 marking a1
Contextual Info: BF747 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • Stable oscillator operation ■ High current gain ■ Good thermal stability.

bf547 philips

Abstract: BF547 B12 IC marking code marking code 604 SOT23
Contextual Info: BF547 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ Feedback capacitance typically 1 pF Stable oscillator operation

Contextual Info: Philips Semiconductors b b 5 3 c]31 0031082 842 M A P X Product specification NPN 1 GHz wideband transistor £ N ACER PHILIPS/DISCRETE BF748 btt » “ PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance

mmbfj310

Abstract: MMBFJ309
Contextual Info: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556

DTB513ZE

Abstract: DTB513ZM SC-75A
Contextual Info: DTB513ZE / DTB513ZM Transistors -500mA / -12V Low VCE sat Digital transistors (with built-in resistors) DTB513ZE / DTB513ZM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTB513ZE (2) Supply voltage 0.2 0.1Min. (1) 0.2 0.15 0.5 0.5

CA3054M96

Abstract: double channel double balanced demodulators CA3054 CA3054M MS8002
Contextual Info: CA3054 S E M I C O N D U C T O R Dual Independent Differential Amp for Low Power Applications from DC to 120MHz November 1996 Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential amplifiers with associated constant current transistors on a

AN215A

Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation

cascode transistor array

Abstract: NTE917
Contextual Info: NTE917 Integrated Circuit Dual, Independent Transistor Array, Differential Amp Description: The NTE917 is an integrated circuit consisting of two independent differential amplifiers with associated constant−current transistors on a common monolithic substrate. The six NPN transistors which comprise

y1 npn

Abstract: 538 NPN transistor
Contextual Info: bbS3R31 0Q2Mb37 Qb6 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE Product specification b7E » NPN 1 GHz wideband transistor FEATURES e BF547 PINNING • Stable oscillator operation • High current gain • Good thermal stability. PIN DESCRIPTION

6u sot-23

Abstract: JFET with Yos s22 sot-23
Contextual Info: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N−Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB

sot-23 marking 6C

Abstract: transistor y21 sot-23
Contextual Info: ON Semiconductort JFET Transistor MMBFU310LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 1 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 M8050 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation m W (Tamb=25℃) 2.4 1.3 0.95 0.4 2.9 Collector current ICM: 1 A Collector-base voltage

Y22 SOT23

Abstract: MMBFJ309LT1, Application Notes JFET with Yos MMBFJ309 MMBFJ309LT1 MMBFJ309LT1G MMBFJ310 MMBFJ310LT1 MMBFJ310LT1G
Contextual Info: MMBFJ309LT1, MMBFJ310LT1 JFET − VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • Pb−Free Packages are Available 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS

m6c marking code

Abstract: MMBFU310LT1G M6C sot-23
Contextual Info: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage

Contextual Info: MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • 3 GATE Site and Control Change Requirements

Contextual Info: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage

MMBFU310LT1

Abstract: MMBFU310LT1G
Contextual Info: MMBFU310LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current