Y1 TRANSISTOR Search Results
Y1 TRANSISTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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| 54F573FM/B |
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54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, |
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Y1 TRANSISTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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xps-CM
Abstract: telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch
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14IES 4V/20mA) A/143/00 xps-CM telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch | |
PXT8050
Abstract: Y1 SOT-89 marking y1 marking y1 sot-89
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OT-89 PXT8050 PXT8550 100mA 800mA 800mA, 30MHz PXT8050 Y1 SOT-89 marking y1 marking y1 sot-89 | |
ss8050 sot-323
Abstract: SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550
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OT-323 SS8050 OT-323 SS8550 ss8050 sot-323 SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol |
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OT-323 SS8050 OT-323 SS8550 | |
ss8050 sot-23
Abstract: SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23
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OT-23 SS8050 OT-23 SS8550 ss8050 sot-23 SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter |
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OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter |
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OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz | |
74LVC1G3157GW
Abstract: 74LVC1G3157 74LVC1G3157GV digital demultiplexer 74LVC1G3157GF 74LVC1G3157GM 74LVC1G3157GN
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74LVC1G3157 74LVC1G3157 74LVC1G3157GW 74LVC1G3157GV digital demultiplexer 74LVC1G3157GF 74LVC1G3157GM 74LVC1G3157GN | |
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Contextual Info: Doc No. TT4-EA-12746 Revision. 2 Product Standards MOS FET FL6L52010L FL6L52010L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features Marking Symbol : Y1 1.4 |
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TT4-EA-12746 FL6L52010L UL-94 | |
IC800
Abstract: y1 npn SS8050LT1
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SS8050LT1 OT-23 SS8050LT1 80mAdc) OT-23 IC800 y1 npn | |
Power bjt
Abstract: bjt npn of lcd resistor 820k power bjt datasheet SN69040 27010 eprom sonix NPN transistor 8050
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SN69000 SN69040 128Kx8) Power bjt bjt npn of lcd resistor 820k power bjt datasheet 27010 eprom sonix NPN transistor 8050 | |
2N6706
Abstract: 2N6705 2N6707 2N6711 2N6712 2N6713 2N6714 B445
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OCR Scan |
O-237 O-237 O-237-1 O-237-2 O-237-1 2N6706 2N6705 2N6707 2N6711 2N6712 2N6713 2N6714 B445 | |
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Contextual Info: H m « n i c i v i r u s jr » e m progress sy i i t i f f 140 C o m m e rc e D rive M o n tg o m eryviile , PA 1833 6-10 13 ~ T e j ; | 1 5 6 3 y1 _9 8 4 0 S D « 1 0 1 9 RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS * C U S S C T R A N S ÌS T O R |
OCR Scan |
152MHz 13SMH2 SP1Q19 SD1019 C8150PFUNELCO 22GpP SD1Q19 | |
MAX17108E
Abstract: MAX17108 TRANSISTOR y9 Y1Y10 MAX17108ETI TRANSISTOR Y10 VCOM LCD a7a10 tft type lcd driver
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10-Channel MAX17108 28-pin, T2855-6 MAX17108E TRANSISTOR y9 Y1Y10 MAX17108ETI TRANSISTOR Y10 VCOM LCD a7a10 tft type lcd driver | |
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CL2U
Abstract: HD66330T HD66330TA0 y192 236PIN
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HD66330T 64-Level HD66330T, HD66330T CL2U HD66330TA0 y192 236PIN | |
MOSFET MARK y2
Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
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MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1 | |
6030v4
Abstract: Y190
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HD66330T 64-Level HD66330T, HD66330T 6030v4 Y190 | |
TRANSISTOR Y237
Abstract: 15-V HD66320T Y239
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HD66320T 64-level HD66320T, Y1-240 TRANSISTOR Y237 15-V HD66320T Y239 | |
2N60 transistor
Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
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MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648 | |
MAX17119EVKIT
Abstract: max17119E Q1/C84-8
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MAX17119 MAX17119 10-channel, MAX17119EVKIT max17119E Q1/C84-8 | |
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Contextual Info: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C |
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HE9004 HI669A HI669A O-251 183oC 217oC 260oC | |
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Contextual Info: HI-SINCERITY Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI31C is designed for use in general purpose amplifier and switching applications. |
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HE9001 HI31C HI31C O-251 183oC 217oC 260oC | |
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Contextual Info: HI-SINCERITY Spec. No. : HE9002 Issued Date : 1994.03.02 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI32C is designed for use in general purpose amplifier and low speed switching applications. |
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HE9002 HI32C HI32C O-251 183oC 217oC 260oC | |
HSB857J
Abstract: a5 marking
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HJ200101 HSB857J O-252 183oC 217oC 260oC HSB857J a5 marking | |