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    Y1 TRANSISTOR Search Results

    Y1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F573FM/B
    Rochester Electronics LLC 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, PDF Buy

    Y1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    xps-CM

    Abstract: telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch
    Contextual Info: Telemecanique XPS-CM U+ U– A1 UV Y4 Y5 Y33 Y3 Z1 Z3 H1 T1 13 23 Y1 Y2 VE NT TY PE Muting Start Y4 34 2 UV Y64 Y54U– 4U+ Muting 1 Start N TA XP S - Y33 13 23 Y1 Y2 UV H1 2 CM + 4 Y34 Y4 14 24 4 Y54 Y6 4 4 Y54 Y6 4 se ed requir /A2-Fu 1 – A1 command -24 closed


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    14IES 4V/20mA) A/143/00 xps-CM telemecanique D range contactors Telemecanique XVB C 21 telemecanique limit switch Telemecanique VO relay safety telemecanique manual telemecanique contactors Y33-Y34 S18PP340 telemecanique hand switch PDF

    PXT8050

    Abstract: Y1 SOT-89 marking y1 marking y1 sot-89
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 PXT8050 Plastic-Encapsulate Transistors SOT-89 TRANSISTOR NPN FEATURES z Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


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    OT-89 PXT8050 PXT8550 100mA 800mA 800mA, 30MHz PXT8050 Y1 SOT-89 marking y1 marking y1 sot-89 PDF

    ss8050 sot-323

    Abstract: SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


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    OT-323 SS8050 OT-323 SS8550 ss8050 sot-323 SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


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    OT-323 SS8050 OT-323 SS8550 PDF

    ss8050 sot-23

    Abstract: SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 SS8050 OT-23 SS8550 ss8050 sot-23 SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz PDF

    74LVC1G3157GW

    Abstract: 74LVC1G3157 74LVC1G3157GV digital demultiplexer 74LVC1G3157GF 74LVC1G3157GM 74LVC1G3157GN
    Contextual Info: 74LVC1G3157 2-channel analog multiplexer/demultiplexer Rev. 3 — 16 September 2010 Product data sheet 1. General description The 74LVC1G3157 provides one analog multiplexer/demultiplexer with one digital select input S , two independent inputs/outputs (Y0, Y1) and a common input/output (Z).


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    74LVC1G3157 74LVC1G3157 74LVC1G3157GW 74LVC1G3157GV digital demultiplexer 74LVC1G3157GF 74LVC1G3157GM 74LVC1G3157GN PDF

    Contextual Info: Doc No. TT4-EA-12746 Revision. 2 Product Standards MOS FET FL6L52010L FL6L52010L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol : Y1 1.4


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    TT4-EA-12746 FL6L52010L UL-94 PDF

    IC800

    Abstract: y1 npn SS8050LT1
    Contextual Info: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw ) O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


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    SS8050LT1 OT-23 SS8050LT1 80mAdc) OT-23 IC800 y1 npn PDF

    Power bjt

    Abstract: bjt npn of lcd resistor 820k power bjt datasheet SN69040 27010 eprom sonix NPN transistor 8050
    Contextual Info: SN69000 E.V. Board LCD Controller with Voice/Dual Tone Melody „ OVERVIEW I/O COM EPROM C SEG Figure-1 Reset VLC Y1,C2,C3 Power BJT LED R OSC SPK L1 & BUZ Figure-1 „ CHIPS EMULATED SN69040 only 1 December 26, 2000 SN69000 E.V. Board LCD Controller with Voice/Dual Tone Melody


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    SN69000 SN69040 128Kx8) Power bjt bjt npn of lcd resistor 820k power bjt datasheet 27010 eprom sonix NPN transistor 8050 PDF

    2N6706

    Abstract: 2N6705 2N6707 2N6711 2N6712 2N6713 2N6714 B445
    Contextual Info: -Tosar.- • ~~1 DIM A B C D E F F h - B —I C n < 3 2 1 MIN MAX 4,32 5,33 4,45 5,20 3,18 4,19 0,41 0,55 0,35 0,50 0,55 1,14 1,40 2,54 12,70 5 D EG G H K L ALL DIMENSIONS ARE IN M.M. y1 PIN CONFIGURATION AVAILABLE IN TO-237 3 CDIL Code Style PIN 1 TO-237


    OCR Scan
    O-237 O-237 O-237-1 O-237-2 O-237-1 2N6706 2N6705 2N6707 2N6711 2N6712 2N6713 2N6714 B445 PDF

    Contextual Info: H m « n i c i v i r u s jr » e m progress sy i i t i f f 140 C o m m e rc e D rive M o n tg o m eryviile , PA 1833 6-10 13 ~ T e j ; | 1 5 6 3 y1 _9 8 4 0 S D « 1 0 1 9 RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS * C U S S C T R A N S ÌS T O R


    OCR Scan
    152MHz 13SMH2 SP1Q19 SD1019 C8150PFUNELCO 22GpP SD1Q19 PDF

    MAX17108E

    Abstract: MAX17108 TRANSISTOR y9 Y1Y10 MAX17108ETI TRANSISTOR Y10 VCOM LCD a7a10 tft type lcd driver
    Contextual Info: 19-4347; Rev 0; 10/08 KIT ATION EVALU E L B A IL AVA 10-Channel High-Voltage Scan Driver and VCOM Amplifier for TFT LCD Panels The MAX17108 includes a 10-channel high-voltage level-shifting scan driver and a VCOM amplifier. The device is optimized for thin-film transistor TFT liquidcrystal display (LCD) applications.


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    10-Channel MAX17108 28-pin, T2855-6 MAX17108E TRANSISTOR y9 Y1Y10 MAX17108ETI TRANSISTOR Y10 VCOM LCD a7a10 tft type lcd driver PDF

    CL2U

    Abstract: HD66330T HD66330TA0 y192 236PIN
    Contextual Info: HD66330T TFT Driver (64-Level Gray Scale Driver for TFT Liquid Crystal Display) Description The HD66330T, a signal driver LSI, drives an active matrix LCD panel having TFTs (thin film transistor) in the picture element (pixel) area. The LSI receives 6-bit digital display data per dot and outputs


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    HD66330T 64-Level HD66330T, HD66330T CL2U HD66330TA0 y192 236PIN PDF

    MOSFET MARK y2

    Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
    Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


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    MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1 PDF

    6030v4

    Abstract: Y190
    Contextual Info: HD66330T TFT Driver 64-Level Gray Scale Driver for TFT Liquid Crystal Display Description Features The HD66330T, a signal driver LSI, drives an active matrix LCD panel having TFTs (thin film transistor) in the picture element (pixel) area. The LSI receives 6-bit digital display data per dot and


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    HD66330T 64-Level HD66330T, HD66330T 6030v4 Y190 PDF

    TRANSISTOR Y237

    Abstract: 15-V HD66320T Y239
    Contextual Info: HD66320T TFT Driver (64-level Gray Scale Driver for High-Quality TFT Liquid Crystal Display) Preliminary May 1995 The HD66320T, a source driver LSI, drives an active matrix LCD panel having TFTs (thin film transistor) in the picture element (pixel) area. The LSI receives 6-bit digital display data per pixel and


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    HD66320T 64-level HD66320T, Y1-240 TRANSISTOR Y237 15-V HD66320T Y239 PDF

    2N60 transistor

    Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
    Contextual Info: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


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    MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648 PDF

    MAX17119EVKIT

    Abstract: max17119E Q1/C84-8
    Contextual Info: 19-5078; Rev 1; 4/10 MAX17119 Evaluation Kit The MAX17119 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that evaluates the MAX17119 (IC) 10-channel, high-voltage, level-shifting scan driver for active-matrix, thin-film transistor (TFT),


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    MAX17119 MAX17119 10-channel, MAX17119EVKIT max17119E Q1/C84-8 PDF

    Contextual Info: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C


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    HE9004 HI669A HI669A O-251 183oC 217oC 260oC PDF

    Contextual Info: HI-SINCERITY Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI31C is designed for use in general purpose amplifier and switching applications.


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    HE9001 HI31C HI31C O-251 183oC 217oC 260oC PDF

    Contextual Info: HI-SINCERITY Spec. No. : HE9002 Issued Date : 1994.03.02 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI32C is designed for use in general purpose amplifier and low speed switching applications.


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    HE9002 HI32C HI32C O-251 183oC 217oC 260oC PDF

    HSB857J

    Abstract: a5 marking
    Contextual Info: HI-SINCERITY Spec. No. : HJ200101 Issued Date : 2001.09.01 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-252 Absolute Maximum Ratings TA=25°C • Maximum Temperatures


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    HJ200101 HSB857J O-252 183oC 217oC 260oC HSB857J a5 marking PDF