Y PARAMETER OF MOSFET Search Results

6R190C6

Abstract: smd TRANSISTOR code marking PR smd transistor marking da IPP60R190C6 EL series SMD transistor TRANSISTOR marking ar code 6r190 smd transistor marking 1 da
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 1.0, 2009-06-19 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

6R199P

Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description

6r385P

Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description

EL series SMD transistor

Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description

PowerMOS transistor TOPFET high side switch

Abstract: BUK203-50Y
Contextual Info: Product specification Philips Semiconductors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch.

Contextual Info: STFI5N95K3 N-channel 950 V, 3 Ω typ., 4 A Zener-protected SuperMESH3 Power MOSFET in I2PAKFP package Datasheet − production data Features 1 2 Order code VDS RDS on max ID PTOT STFI5N95K3 950 V 3.5 Ω 4A 25 W • Fully insulated and low profile package with

TRANSISTOR bHrt

Abstract: transistor 9a2a ga8c STT3PF20V bhrt transistor a6 s STT3PF20
Contextual Info: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS !ÃW RDS on 1Ã!ÃWÃ5#$W 1Ã!$ÃWÃ5!&W ID !!Ã6 TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE

Contextual Info: STY130NF20D N-channel 200 V, 0.01 Ω typ., 130 A STripFET II with fast recovery diode Power MOSFET in a Max247 package Datasheet - production data Features Order code VDS RDS on max. STY130NF20D 200 V 0.012 Ω ID PTOT 130 A 450 W • Exceptional dv/dt capability

7N80K5

Abstract: V/7N80K5
Contextual Info: STL7N80K5 N-channel 800 V, 0.95 Ω typ., 3.6 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID STL7N80K5 800 V 1.2 Ω 3.6 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)

Contextual Info: STD10NF30 Automotive-grade N-channel 300 V, 10 A, 0.28 Ω typ., MESH OVERLAY Power MOSFET in a DPAK package Datasheet - production data Features TAB Order code VDS RDS on max. ID STD10NF30 300 V 0.33 Ω 10 A • Designed for automotive applications and

BN384M2.5X6

Contextual Info: STL70N4LLF5 N-channel 40 V, 6.1 mΩ typ., 18 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features Order code VDS RDS on ID STL70N4LLF5 40 V 6.7 mΩ 18 A • RDS(on) * Qg industry benchmark 1 2 3 • Extremely low on-resistance RDS(on)

Contextual Info: STL70N4LLF5 Automotive-grade N-channel 40 V, 6.1 mΩ typ., 18 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 Order code VDS RDS on max ID STL70N4LLF5 40 V 6.7 mΩ 18 A • Designed for automotive applications and

Contextual Info: STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes TAB VDS RDS on max PTOT ID 1 3 STF1N105K3 STFW1N105K3 1050 V 1 11 Ω

STW19NM50N

Contextual Info: STF19NM50N, STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω typ., 14 A MDmesh II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes RDS on max ID 550 V 0.25 Ω 14 A STF19NM50N 3 1 VDS @ TJmax 3 2 1

Contextual Info: STL90N3LLH6 N-channel 30 V, 0.0038 Ω typ., 24 A STripFET VI DeepGATE™ Power MOSFET in PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 Order code VDS RDS on max. ID STL90N3LLH6 30 V 0.0045 Ω 24 A (1) 1. The value is rated according Rthj-pcb

fs8205A

Abstract: FS8205A-DS-12 fs8205
Contextual Info: FS8205A-DS-12_EN Datasheet AUG 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.2 FS8205A Fo Dual N-Channel Enhancement Mode Power MOSFET FS8205A Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: Ordering number : ENN6898~| P-Channel Silicon MOSFET 2SJ569LS Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. unit : mm 2078B Specifications Absolute Maximum Ratings at Ta=25°C Parameter

fs8205

Contextual Info: FS8205-DS-16_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.6 Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET FS8205 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

FS8205

Contextual Info: FS8205A-DS-15_EN APR 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.5 Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET FS8205A FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: FS8205-DS-14_EN Datasheet AUG 2010 Pr RT Re op UN fe ert E’ re ie nc s e O nl y REV. 1.4 FS8205 Fo r FO Dual N-Channel Enhancement Mode Power MOSFET FS8205 Fo r FO Pr RT Re op UN fe ert E’ re ie nc s e O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

FS8205

Contextual Info: FS8205-DS-17_EN NOV 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.7 Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET FS8205 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: STD5N95K3, STF5N95K3, STP5N95K3, STU5N95K3 N-channel 950 V, 3 Ω typ., 4 A Zener-protected SuperMESH3 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − production data Features TAB 3 Order codes 1 DPAK 3 1 2 STP5N95K3 TAB ID PTOT 90 W

fs8205

Contextual Info: FS8205-DS-10_EN Datasheet AUG 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.0 FS8205 Fo Dual N-Channel Enhancement Mode Power MOSFET FS8205 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

K2682

Abstract: 5106a diode u2J 2SK2682 K268 K-2682
Contextual Info: Ordering number : ENN6783 1 N-Channel Silicon MOSFET sam yo 7_2SK2682 / Ultrahigh-Speed Switching Applications Package Dimensions Features unit : mm • Low ON-resistance.