Y 27645 Search Results

Contextual Info: PACKAGE DIAGRAM OUTLINES SOJ PACKAGE DIAGRAM OUTLINES SOJ Continued REVISIONS DWG # S Y M B □ S020- JEDEC VARIATION DWG £ □ AD L MIN NOM MAX A .120 .130 .140 A1 .078 .086 .095 D .500 .506 .512 E .335 .340 .347 E1 .292 .296 .300 E2 .262 .267 .272 DESCRIPTION

s0324

Abstract: land pattern for TSOP idt IDT land pattern tsop 6
Contextual Info: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for

Contextual Info: CMOS STATIC RAM 1 MEG 128K x 8-BIT REVOLUTIONARY PINOUT PRELIMINARY IDT71124 In te g ra te d De v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CMOS static RAM • JED E C revolutionary pinout (center power/G ND) for

20287

Contextual Info: 128K x 8 3.3V SYNCHRONOUS SRAM WITH ZBT AND PIPELINED OUTPUT PRELIMINARY IDT71V508 In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • • • • • • • 128K x 8 memory configuration High speed - 1 0 0 MHz 5 ns Clock-to-Data Access

Contextual Info: 128K x 8 3.3V SYNCHRONOUS SRAM WITH ZBT AND FLOW-THROUGH OUTPUT ADVANCE INFORMATION IDT71V509 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • • • • • • • 128K x 8 memory configuration High speed - 66 MHz 9 ns Clock-to-Data Access

ln 3624

Abstract: ansi y14.5m-1982 decimal .xxxx 71V416S15
Contextual Info: PRELIMINARY IDT71V416 3.3V CMOS STATIC RAM 4 MEG 256Kx 16-BIT I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise. • Equal access and cycle times

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 1Mx 4-BIT ADVANCE INFORMATION IDT71V428 I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

Contextual Info: J d t 3.3V CMOS STATIC RAM 4 MEG 512K X 8-BIT) ADVANCE r o V424S IDT71V424L I n t e g r a t e d D e i/ ic e T e c h n o l o g y , I n c . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise

Contextual Info: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times

Contextual Info: REVISIONS DCN R EV DESCRIPTION DATE 27645 03 R ED R AW TO JEDEC FO R M AT 0 3/1 5/95 T. VU 27945 04 ADD 4 4 LD 0 6/2 5/95 T. VU 28697 05 0 3 /0 5 /9 6 T. VU 60363 06 CHANGE S TAN D O FF DIM FOR 4 4 LD ADD 3 6 LD A PP R O VED 0 7/2 0/97 AA - .01 5 / . 0 2 0

s0322

Abstract: cmos ic 4047 IC 4047 pin diagram PJ 2079
Contextual Info: jdt CMOS STATIC RAM 1 MEG 128Kx 8-BIT) IDT71024 ïite g ia te d D ev ize T ech n o logy, ï i c . FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • Com m ercial (0° to 70°C), Industrial (-40° to 85°C) and M ilitary (-55° to 125°C) tem perature options

MAA 723

Abstract: ansi y14.5m-1982 decimal CD 4039 AE pj 299
Contextual Info: PACKAGE s o i e DIAGRAM O U T L IN E S PACKAGE SO IC DIAGRAM O U T L IN E S C o n t in u e d REVISIONS DWG § DWG § S016- J E D E C VARIATIO N □ AA MIN NOM DWG § MIN NOM M AX S020- 2 J E D E C VARIATIO N □ AB T E MAX S 0 1 8 - -1 J E D E C VARIATIO N

transformador 12v

Abstract: caracteristicas transformador de 24v 215730 LM 7804 transformador 120 12v LRX 1-400 elsta sin blitzleuchte trafo toroidal 26733
Contextual Info: I W W M LAMPADE A LED - LED BULBS - AMPOULES A LED - LED-LEUCHTMITTEL - LÁMPARAS DE LEDS 24V— //V0,3W-0,7W AllnGaP LED 0 3 mm. mCd p 200 LD 103 DURATA GARANTITA - GUARANTEED DURATION - DUREE GARANTIE - GARANTIERTE DAUER - DURACIÓN GARANTIZADA 100.000 h.~

land pattern for TSOP 2 44 PIN

Abstract: com 6116 e2 CHN 920
Contextual Info: 3.3V CMOS STATIC RAM 1 MEG 128K X 8 CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • JED E C revolutionary pinout (center power/GND) for reduced noise • Equal access and cycle tim es

CHN 920

Abstract: 71024S15 chn 830
Contextual Info: jdt CMOS STATIC RAM 1 MEG 128Kx 8-BIT) IDT71024 ïite g ia te d D ev ize T ech n o logy, ï i c . FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • Com m ercial (0° to 70°C), Industrial (-40° to 85°C) and M ilitary (-55° to 125°C) tem perature options

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 1M x 4-BIT Integrated Device Technology, Inc. ADVANCE INFORMATION IDT71V428S IDT71V428L FEATURES: DESCRIPTION: • 1M x 4 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

Contextual Info: 128K x 8 3.3V SYNCHRON OUS SRAM WITH ZBT AND PIPELINED OUTPUT PRELIMINARY IDT71V508 Integrated Device Technology, Inc. FEATURES: • • • • • • • 128Kx 8 memory configuration High speed -1 2 0 MHz 4.5 ns Clock-to-Data Access Registered Output

Contextual Info: CMOS STATIC RAM 1 MEG 256K x 4-BIT IDT71028 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 advanced high-speed CM O S static RAM • Equal access and cycle times — Commercial: 12/15/17/20ns • One Chip Select plus one Output Enable pin

27645

Abstract: vu 725
Contextual Info: ^ - 1 . 0 0 7 | C ACD BCD - AA - 3A ii n n n n n n n n n n n n n n n d & N A A S A i 1 = e ! i i i ! / - INDEX AREA .225 MAX A1 1 I A 1 1 U Lu u u u u u u u u u u u u u 1 2 3 .150 MAX .01 5/.020 t —— /— WITH PLATING 1 REF

MC12149

Abstract: MC12149D 10KHZ MA393 MC42149 OTEK Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer MC42149 The MCI 2149 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using

Contextual Info: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for

IDT71028S

Contextual Info: CMOS STATIC RAM 1 MEG 256K x 4-BIT IDT71028S70 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 C M O S static RAM • Equal access and cycle times — Commercial: 70ns • One Chip Select plus one Output Enable pin • Bidirectional data Inputs and outputs directly

DD27D

Abstract: land pattern for TSOP 2 50 MB257 TM 1828
Contextual Info: 3.3V CMOS STATIC RAM 32Kx 16-BIT PRELIMINARY IDT71V008 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — 10/12/15/20ns • One Chip Select plus one Output Enable pin

Contextual Info: 3.3V CMOS STATIC RAM 4 MEG 512Kx 8-BIT ADVANCE INFORMATION IDT71V424 Integrated Devize Technology, li e . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times