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    DD27D Search Results

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    Schneider Electric LXM62DD27D21000

    Servo Drives DOUBLE DRIVE 9 27 A, HW STO SIL 3 PLE, A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LXM62DD27D21000 1
    • 1 $5604.58
    • 10 $5604.58
    • 100 $5604.58
    • 1000 $5604.58
    • 10000 $5604.58
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    RS LXM62DD27D21000 Bulk 1 1 Weeks 1
    • 1 $5716.67
    • 10 $5602.34
    • 100 $5430.84
    • 1000 $5430.84
    • 10000 $5430.84
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    Square D by Schneider Electric LXM62DD27D21000

    Servo Motor Drive, Double Drive, 4.3 Kw; |Square D By Schneider Electric LXM62DD27D21000
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark LXM62DD27D21000 Bulk 1
    • 1 $5715.65
    • 10 $5715.65
    • 100 $5715.65
    • 1000 $5715.65
    • 10000 $5715.65
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    DD27D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: N AMER P H I L I P S / D I S C R E T E fc.^E bb53R31 ]> 0027077 Philips Semiconductors T20 «A PX Product specification Schottky barrier diodes PBYR2100CT series QUICK REFERENCE DATA FEATURES • Double diode in SMD power package • Low turn-on and high breakdown


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    bb53r31pbyr2100ctpbyr280ctpbyr290ct+1pbyr21ooct PDF

    GSM jamming scheme generator

    Abstract: "IEEE 802.3" "Clause 27" BRXD12 BTXD02 APAA LUC3R04 S5241 OXCO LUC3S02 BTXD10
    Contextual Info: Preliminary Data Sheet July 1997 microelectronics group Lucent Technologies Bell Labs Innovations LUC3R04 10/100 Mbits/s Managed Repeater CMOS Integrated Circuit Features • Four single repeaters per chip allow for port mobil­ ity repeater designs similar to those based on the


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    luc3r04att1rx04100base-txluc3s02+11005002b208-pinluc3r04-fcgsm jamming scheme generatorieee 802.3" "clause 27brxd12btxd02apaas5241oxcobtxd10 PDF

    Contextual Info: E2G 1 054-18-62 O K I Semiconductor MD56V62800A 4-Bank x 2,097,152-Word x 8-Bit SY N C H R O N O U S DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and


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    md56v62800a152-wordcycles/64b724b40 PDF

    M37704

    Contextual Info: M IT S U B IS H I M ICROCOMPUTERS M 37704E4BXXXFP.M 37704E4BFS PROM VERSION of M 37704M 4B XXXFP DESCRIPTION APPLICATION The M37704E4BXXXFP is a single-chip microcomputer de­ signed with high-performance CMOS silicon gate technolo­ Control devices for equipment that requires motor control


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    37704e4bxxxfp37704e4bfs37704mm37704e4bxxxfp+480-pinm3770432k-byte25mvrms PDF

    GP150MHB16S

    Contextual Info: Si GEC PLESSEY S E M I C O N D U C T O R S DS4131-5.2 G P 1 5 M H B 1 6 S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS VCES 1600V 3.3V CEfsat 150 A ^qCO NT) 300A ^qPK ) 270ns tr 590ns t, v • High Power Switching. ■ Motor Control.


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    ds4131-5270ns590ns44lbs+570lbs88lbs18lbs1500ggp150mhb16s PDF

    TNETX3100

    Contextual Info: TNETX15AE ADDRESS-LOOKUP DEVICE S P W S 041A - A U G U S T 1997 - R EVISED O C TO B E R 1997 • Provides up to 8K-Address Matching System • • Provides Glueless External-Address Match EAM Interface to the TN ETX3150/TN ETX3150A/TN ETX3100 Provides Direct Input/Output (DIO) Interface


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    tnetx15aeetx3150/tnetx3150a/tnetx3100+215-nstnetx3100 PDF

    Toshiba rdram

    Abstract: TC59R1809
    Contextual Info: TO S H IB A D IG IT A L IN TE G R A TE D CIRCUIT i N T t ^ K A t E D C IR C U IT T C 5 9 R 1 8 0 9 V K /H K TOSHIBA TFCHNICAL DATA SILICO N G> T E "C M O S TENTATIVE 2 ,0 9 7 ,152w ord x 9 - b i t Rambus DRAM INTRO DUCTIO N The TC59R1809VK/HK Rambus DRAM RDRAM is a next-generation*


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    tc59r1809vk/hk500mb/s32-pintc59r1809vk/h+3svp32-p-1125atoshiba rdramtc59r1809 PDF

    byv26c ph

    Abstract: philips diode PH 15
    Contextual Info: N AUER PHILIPS/DISCRETE 1,^53131 QDS7Q2b SbT • APX b^E » Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse


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    byv26byv26abyv26cbyv26d+4byv26bbyv26ebyv26c phphilips diode ph 15 PDF

    Contextual Info: N AUER PHILIPS/DISCRETE bRE D ^ 5 3 ^ 3 1 D027D37 3MH « A P X Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse


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    d027d37byv36byv36abyv36b+4byv36cbyv36ebyv36fbyv36g PDF

    DD27D

    Abstract: land pattern for TSOP 2 50 MB257 TM 1828
    Contextual Info: 3.3V CMOS STATIC RAM 32Kx 16-BIT PRELIMINARY IDT71V008 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — 10/12/15/20ns • One Chip Select plus one Output Enable pin


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    16-bitidt71v00810/12/15/20ns44-pin+6288-bit910-338-207qdd27dland pattern for tsop 2 50mb257tm 1828 PDF

    me 555

    Abstract: 3tr5 active suspension MD56V62800A 270b5 D56V62800A
    Contextual Info: E2G1054-18-62 O K I Semiconductor MD56V62800A This version: Jun. 1998 4-B ank x 2,097,152-W ord x 8-Bit SYNCHRONOUS DYNAM IC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and


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    e2g1054-18-62md56v62800a152-wordcycles/64+6b7e4e40me 5553tr5active suspension270b5d56v62800a PDF

    TNETX3100

    Abstract: DD35 TNETX15AE TNETX3150 TNETX3150A EAM02
    Contextual Info: TNETX15AE ADDRESS-LOOKUP DEVICE SPWS041 - AU G U S T 1997 • • • • • • • • Provides up to 8K-Address Matching System Provides Glueless External-Address Match EAM Interface to the TN ETX3150/TN ETX3150 A/TN ETX3100 Uses Standard Off-the-Shelf SRAMs


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    etx3150/tnetx3150etx3100tnetx15ae+9spws041s-pqfp-g144ms-0264040147/ctnetx3100dd35tnetx3150tnetx3150aeam02 PDF

    v17805

    Contextual Info: HM51W17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30, 1996 Description The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805B offers


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    hm51w17805b152-wordade-203-462b28-pin+2ns/70v17805 PDF

    5962-9096504MTA

    Contextual Info: Military Field Programmable Gate Arrays Features A C T 3 Features Highly Predictable Performance with 100 Percent Automatic Placement and Routing • Highest-Performance, Highest-Capacity FPGA Family Device Sizes from 1200 to 10,000 gates up to 25,000 PLD


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    1200xl20-pinq0027075962-9096504mta PDF

    Contextual Info: HM51W17400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-370A Z Rev. 1.0 Nov. 17, 1995 Description The Hitachi HM51W17400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17400B offers Fast


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    hm51w17400b304-wordade-203-370amw/360+2mw/324qq27021 PDF

    Contextual Info: P g jp i G E C PLESSEY DS4340-4.0 GP1000DHB06S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS 600V v CES v* CE Mt 2.1V 1000A ^C(CONT) 2000A ^C(PK) 290ns tr 430ns t, APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.


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    ds4340-4gp1000dhb06s290ns430ns+544lbs70lbs88lbs18lbs1500g PDF

    BYW 90

    Abstract: BYW97G BYW97F BYV97G
    Contextual Info: N APIER P H I L I P S / D I S C R E T E b'ìE D bbSB'iBl DQ27GbO P hilips S em ico n d u cto rs P relim inary sp ecification Fast s o ft-re co ve ry avalanche re ctifier d io d es FEA TU R E S • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse


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    dq27gbobyw97fbyw97gbyw 90+1byv97g PDF

    ADS774SF

    Contextual Info: B U R R -B R O W N « I ADS774 1 Microprocessor-Compatible Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • COMPATIBLE WITH ADC574, ADC674 AND ADC774 SOCKETS The ADS774 is a 12-bit successive approximation an alo g -to -d ig ital co n v erter using an in novative


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    ads774adc574adc674adc774+3120mw12-bitads774sf PDF

    Contextual Info: HM5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word X 1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page


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    hm5116100b216-wordade-203-371amw/385+1mw/358 PDF