DD27D Search Results
DD27D Price and Stock
Schneider Electric LXM62DD27D21000Servo Drives DOUBLE DRIVE 9 27 A, HW STO SIL 3 PLE, A |
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LXM62DD27D21000 | 1 |
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LXM62DD27D21000 | Bulk | 1 | 1 Weeks | 1 |
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Square D by Schneider Electric LXM62DD27D21000Servo Motor Drive, Double Drive, 4.3 Kw; |Square D By Schneider Electric LXM62DD27D21000 |
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LXM62DD27D21000 | Bulk | 1 |
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DD27D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: N AMER P H I L I P S / D I S C R E T E fc.^E bb53R31 ]> 0027077 Philips Semiconductors T20 «A PX Product specification Schottky barrier diodes PBYR2100CT series QUICK REFERENCE DATA FEATURES • Double diode in SMD power package • Low turn-on and high breakdown |
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bb53r31pbyr2100ctpbyr280ctpbyr290ct+1 | |
GSM jamming scheme generator
Abstract: "IEEE 802.3" "Clause 27" BRXD12 BTXD02 APAA LUC3R04 S5241 OXCO LUC3S02 BTXD10
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luc3r04att1rx04100base-txluc3s02+11 | |
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Contextual Info: E2G 1 054-18-62 O K I Semiconductor MD56V62800A 4-Bank x 2,097,152-Word x 8-Bit SY N C H R O N O U S DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and |
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md56v62800a152-wordcycles/64b724b40 | |
M37704Contextual Info: M IT S U B IS H I M ICROCOMPUTERS M 37704E4BXXXFP.M 37704E4BFS PROM VERSION of M 37704M 4B XXXFP DESCRIPTION APPLICATION The M37704E4BXXXFP is a single-chip microcomputer de signed with high-performance CMOS silicon gate technolo Control devices for equipment that requires motor control |
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37704e4bxxxfp37704e4bfs37704mm37704e4bxxxfp+4 | |
GP150MHB16SContextual Info: Si GEC PLESSEY S E M I C O N D U C T O R S DS4131-5.2 G P 1 5 M H B 1 6 S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS VCES 1600V 3.3V CEfsat 150 A ^qCO NT) 300A ^qPK ) 270ns tr 590ns t, v • High Power Switching. ■ Motor Control. |
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ds4131-5270ns590ns44lbs+5 | |
TNETX3100Contextual Info: TNETX15AE ADDRESS-LOOKUP DEVICE S P W S 041A - A U G U S T 1997 - R EVISED O C TO B E R 1997 • Provides up to 8K-Address Matching System • • Provides Glueless External-Address Match EAM Interface to the TN ETX3150/TN ETX3150A/TN ETX3100 Provides Direct Input/Output (DIO) Interface |
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tnetx15aeetx3150/tnetx3150a/tnetx3100+2 | |
Toshiba rdram
Abstract: TC59R1809
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tc59r1809vk/hk500mb/s32-pintc59r1809vk/h+3 | |
byv26c ph
Abstract: philips diode PH 15
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byv26byv26abyv26cbyv26d+4 | |
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Contextual Info: N AUER PHILIPS/DISCRETE bRE D ^ 5 3 ^ 3 1 D027D37 3MH « A P X Philips Semiconductors Preliminary specification Very fast soft-recovery avalanche rectifier diodes FEATURES • Non-snap-off soft- recovery switching characteristics • Capability of absorbing reverse |
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d027d37byv36byv36abyv36b+4 | |
DD27D
Abstract: land pattern for TSOP 2 50 MB257 TM 1828
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16-bitidt71v00810/12/15/20ns44-pin+6 | |
me 555
Abstract: 3tr5 active suspension MD56V62800A 270b5 D56V62800A
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e2g1054-18-62md56v62800a152-wordcycles/64+6 | |
TNETX3100
Abstract: DD35 TNETX15AE TNETX3150 TNETX3150A EAM02
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etx3150/tnetx3150etx3100tnetx15ae+9 | |
v17805Contextual Info: HM51W17805B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-462B Z Rev. 2.0 May. 30, 1996 Description The Hitachi HM51W17805B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805B offers |
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hm51w17805b152-wordade-203-462b28-pin+2 | |
5962-9096504MTAContextual Info: Military Field Programmable Gate Arrays Features A C T 3 Features Highly Predictable Performance with 100 Percent Automatic Placement and Routing • Highest-Performance, Highest-Capacity FPGA Family Device Sizes from 1200 to 10,000 gates up to 25,000 PLD |
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1200xl20-pinq0027075962-9096504mta | |
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Contextual Info: HM51W17400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-370A Z Rev. 1.0 Nov. 17, 1995 Description The Hitachi HM51W17400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17400B offers Fast |
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hm51w17400b304-wordade-203-370amw/360+2 | |
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Contextual Info: P g jp i G E C PLESSEY DS4340-4.0 GP1000DHB06S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS 600V v CES v* CE Mt 2.1V 1000A ^C(CONT) 2000A ^C(PK) 290ns tr 430ns t, APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers. |
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ds4340-4gp1000dhb06s290ns430ns+5 | |
BYW 90
Abstract: BYW97G BYW97F BYV97G
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dq27gbobyw97fbyw97gbyw 90+1 | |
ADS774SFContextual Info: B U R R -B R O W N « I ADS774 1 Microprocessor-Compatible Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • COMPATIBLE WITH ADC574, ADC674 AND ADC774 SOCKETS The ADS774 is a 12-bit successive approximation an alo g -to -d ig ital co n v erter using an in novative |
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ads774adc574adc674adc774+3 | |
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Contextual Info: HM5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word X 1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page |
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hm5116100b216-wordade-203-371amw/385+1 | |