XX100 Search Results

Contextual Info: XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Features Rev. V1 Chip Device Layout •      Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC & Output Power Testing

XX1001-QK-0N00

Abstract: XX1001-QK XX1001-QK-EV1
Contextual Info: XX1001-QK Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Features •     Rev. V1 Functional Block Diagram Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression RoHS* Compliant and 260°C Reflow Compatible

20DBL0629

Abstract: XX1001-BD XX1001-BD-000V XX1001-BD-EV1
Contextual Info: XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Features Rev. V1 Chip Device Layout •      Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC & Output Power Testing

Contextual Info: XX1002-QH Active Doubler 2.5 - 6.0 / 5.0 - 12.0 GHz Rev. V2 Functional Block Diagram Features •       Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5 V, 125 mA Bias Lead-Free 4 mm 24-lead QFN Package 100% RF, DC and Output Power Testing

Contextual Info: XX1002-QH Active Doubler 2.5-6.0/5.0-12.0 GHz Rev. V1 Features •       Functional Block Diagram Octave Bandwidth Operation +16.0 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 4x4 mm QFN Package 100% RF, DC and Output Power Testing

Contextual Info: XX1007-BD Doubler 13.5-17.0/27.0-34.0 GHz Rev. V1 Features Functional Block Diagram •       Integrated Gain, Doubler and Driver Stages Self-biased Architecture +21.0 dBm Output Saturated Power 40.0 dBc Fundamental Suppression On-Chip ESD Protection

Contextual Info: XX1000-QT Active Doubler 7.5-22.5/15.0-45.0 GHz Rev. V1 Features •     Functional Block Diagram +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package 100% RF, DC and Output Power Testing RoHS* Compliant and 260°C Reflow Compatible

XX1002-QH

Abstract: XX1002-QH-0G00 XX1002-QH-0G0T XX1002-QH-EV1
Contextual Info: XX1002-QH Active Doubler 2.5-6.0/5.0-12.0 GHz Rev. V1 Features •       Functional Block Diagram Octave Bandwidth Operation +16.0 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 4x4 mm QFN Package 100% RF, DC and Output Power Testing

Contextual Info: ~B- I I File No. U3D4-103-XX1001013 SHEET 1 / SP E C IF IC A T IO N S Current Rating : 1 AMP Dielectric Withstanding Voltage : AC 5 0 0 V For 1 Minute Contact Resistance : 3 0 Milliohms Max. At DC 100m A Insulator Resistance : 1000M egohm s Min. At DC 500V

XX1000-QT

Abstract: XX1000-QT-0G00 XX1000-QT-0G0T XX1000-QT-EV1 6TH 10
Contextual Info: XX1000-QT Active Doubler 7.5-22.5/15.0-45.0 GHz Rev. V1 Features •     Functional Block Diagram +18 dBm Output Power -20 dBc Fundamental Leakage 3x3 mm QFN Package 100% RF, DC and Output Power Testing RoHS* Compliant and 260°C Reflow Compatible

XX1000-BD-EV1

Abstract: XR1002 XX1000-BD XX1000-BD-000V
Contextual Info: XX1000-BD Active Doubler 7.5-25.0/15.0-50.0 GHz Rev. V1 Features Chip Device Layout XX1000-BD • Excellent Broadband Mixer Driver  Single Ended Fed Doubler with Distributed Buffer Amplifier  Excellent LO Driver for M/A-COM Tech Receivers  +15 dBm Output Drive

Contextual Info: XX1002-QH Active Doubler 2.5 - 6.0 / 5.0 - 12.0 GHz Rev. V4 Functional Block Diagram Features •       Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5 V, 125 mA Bias Lead-Free 4 mm 24-lead QFN Package 100% RF, DC and Output Power Testing

Contextual Info: XX1001-QK Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Features •     Rev. V1 Functional Block Diagram Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +25.0 dBm Output Power 50.0 dBc Fundamental Suppression RoHS* Compliant and 260°C Reflow Compatible

Contextual Info: ~B- I I File No. U3D4-103-XX1001013 SHEET 1 / SP E C IF IC A T IO N S Current Rating : 1 AMP Dielectric Withstanding Voltage : AC 5 0 0 V For 1 Minute Contact Resistance : 3 0 Milliohms Max. At DC 100m A Insulator Resistance : 1000M egohm s Min. At DC 500V

Contextual Info: XX1000-BD Active Doubler 7.5-25.0/15.0-50.0 GHz Rev. V1 Features Chip Device Layout XX1000-BD • Excellent Broadband Mixer Driver  Single Ended Fed Doubler with Distributed Buffer Amplifier  Excellent LO Driver for M/A-COM Tech Receivers  +15 dBm Output Drive

XX1007-QT

Abstract: XX1007-QT-0G00 XX1007-QT-0G0T XX1007-QT-EV1
Contextual Info: XX1007-QT Doubler 13.5-17.0/27.0-34.0 GHz Rev. V1 Features •         Functional Block Diagram Integrated Gain, Doubler and Driver Stages Single Positive Supply, +5V Integrated Bypassing Capacitor +20.0 dBm Output Saturated Power 35.0 dBc Fundamental Suppression

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

703078AY

Abstract: 70F3079AY NEC D76 70307 U14665EJ4V0UD uPD703075AY uPD703076AY uPD703078AY uPD703078Y uPD703079YGC
Contextual Info: User’s Manual V850/SF1 32-Bit Single-Chip Microcontroller Hardware µPD703075AY µPD703075AY A µPD703076AY µPD703076AY(A) µPD703078AY µPD703078AY(A) µPD703078Y µPD703079AY µPD703079AY(A) µPD703079Y Document No. U14665EJ4V0UD00 (4th edition) Date Published September 2003 N CP(K)

VIC068-VAC068

Abstract: VIC068 registers AU-AIS VAC068 L017 L023 LD22 LD25 LD27 VIC068
Contextual Info: CYPRESS SEMICONDUCTOR 40E D 03 ZSÖTbbS DOObObO VAC068 PRELIMINARY CYPRESS SEMICONDUCTOR Features • — S ep a ra te s eg m en ts on lo c a l sid e a v a ila b le for D R A M , su b sy stem b u s V S B , sh ared re so rc es, V M E , lo c a l I/O , and E P R O M

Contextual Info: bq2014 Gas Gauge IC with External Charge Control Features General Description ➤ Conservative and repeatable measurement of available charge in rechargeable batteries The bq2014 Gas Gauge IC is intended for battery-pack or in-system installation to maintain an accurate

bq2012

Abstract: ZVNL110A td2012
Contextual Info: bq2012 Gas Gauge IC With Slow-Charge Control Features General Description means of controlling charge based on the battery's charge state. ➤ Conservative and repeatable measurement of available charge in rechargeable batteries The bq2012 Gas Gauge IC is intended for battery-pack or in-system

circuit card assy input filter for miller 200 Dx

Abstract: 64 point radix 2 FFT LM318 list DSP101 74AS20 TTL radix-4 DIT FFT C code TLC32040C TMS320 TMS320C31 TMS320C32
Contextual Info: TMS320C3x GeneralĆPurpose Applications User’s Guide 1998 Digital Signal Processing Solutions Printed in U.S.A., January 1998 SDS SPRU194 TMS320C3x General-Purpose Applications User’s Guide Literature Number: SPRU194 January 1998 Printed on Recycled Paper