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20DBL0629 Datasheets (1)

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Mimix Broadband

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
20DBL0629		Mimix Broadband	18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier	Original	PDF	210.95KB	6

20DBL0629 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
l0629 Abstract: 20DBL0629 84-1LMI A102 395 2XF Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier September 2005 - Rev 01-Sep-05 20DBL0629 Features Chip Device Layout tio n Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression	Original	01-sep-05 20dbl0629 mil-std-883 l0629 +384-1lmi a102 395 2xf	PDF
Contextual Info: XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Features Rev. V1 Chip Device Layout •      Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC & Output Power Testing	Original	xx1001-bd mil-std-883	PDF
20DBL0629 Abstract: XX1001-BD XX1001-BD-000V XX1001-BD-EV1 Contextual Info: XX1001-BD Doubler and Power Amplifier 18.0-21.0/36.0-42.0 GHz Features Rev. V1 Chip Device Layout •      Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC & Output Power Testing	Original	xx1001-bd mil-std-883 20dbl0629 xx1001-bd-000v +1xx1001-bd-ev1	PDF
20DBL0629 Abstract: DM6030HK TS3332LD XX1001-BD XX1001-BD-000V XX1001-BD-000W XX1001-BD-EV1 X1001-BD 395 2XF Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	26-jan-07 x1001-bd mil-std-883 xx1001-bd-000v +8xx1001-bd-000w xx1001-bd-ev1 xx1001 20dbl0629 dm6030hk ts3332ld xx1001-bd 395 2xf	PDF
Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier January 2007 - Rev 26-Jan-07 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	26-jan-07 x1001-bd mil-std-883 xx1001-bd-000v +3xx1001-bd-000w xx1001-bd-ev1 xx1001	PDF
Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier March 2008 - Rev 18-Mar-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	18-mar-08 x1001-bd mil-std-883 devicex1001-bd-000w +2xx1001-bd-ev1 xx1001	PDF
XX1001-BD-EV1 Abstract: 20DBL0629 DM6030HK TS3332LD XX1001-BD XX1001-BD-000V Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier November 2008 - Rev 03-Nov-08 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	03-nov-08 x1001-bd mil-std-883 xx1001-bd-000v +6xx1001-bd-ev1 xx1001 20dbl0629 dm6030hk ts3332ld xx1001-bd	PDF
Contextual Info: 18.0-21.0/36.0-42.0 GHz GaAs MMIC Doubler and Power Amplifier October 2006 - Rev 04-Oct-06 X1001-BD Features Integrated Doubler and Power Amplifier Excellent Saturated Output Stage +26.0 dBm Output Power 50.0 dBc Fundamental Suppression 100% On-Wafer RF, DC and Output Power Testing	Original	04-oct-06 x1001-bd mil-std-883 xx1001-bd-000v +3xx1001-bd-000w xx1001-bd-ev1 xx1001	PDF