XDS TRANSISTOR Search Results

xds pnp

Abstract: Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs
Contextual Info: SIEMENS BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor Rn = 2.2kii, R2 = 10kii Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23

Contextual Info: SIEMENS BCR 555 PNP Silicon Digital Transistor •Switching circuit, inverter, interface circuit, driver circuit >Built in resistor R-| = 2.2kÎ2, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 555 XDs Q62702-C2383 1=B Package 2=E 3=C SOT-23

xds pnp

Contextual Info: BCR555 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=2.2k, R2=10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR555 XDs Pin Configuration 1=B 2=E Package 3=C SOT23

xds pnp

Abstract: lp62256e BCR555 VPS05161
Contextual Info: BCR555 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=2.2k, R2=10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR555 XDs Pin Configuration 1=B 2=E Package 3=C SOT23

Contextual Info: BCR555 PNP Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 2.2kΩ, R2= 10kΩ 1 C 3 R1 R2 1 2 B E EHA07183 Type BCR555 Marking XDs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings

PIN CONFIGURATION IC 555

Abstract: C2383 transistor c2383 IC 555 Q62702-C2383 c2383 transistor xds pnp datasheet of ic 555 transistor c2383 0 BR C2383
Contextual Info: BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 2.2kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23 Maximum Ratings

BCR555

Abstract: marking XDS sot23 bcr555 equivalent lp62256e BCW66
Contextual Info: BCR555 PNP Silicon Digital Transistor • Built in bias resistor R1= 2.2 kΩ, R2 = 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1) 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR555 Marking XDs Pin Configuration 1=B 2=E Package

Contextual Info: BCR555 PNP Silicon Digital Transistor • Built in bias resistor R1= 2.2 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR555 Marking XDs Pin Configuration 1=B 2=E Package SOT23

Contextual Info: BCR555 PNP Silicon Digital Transistor • Built in bias resistor R1= 2.2 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR555 Marking XDs Pin Configuration 1=B 2=E Package SOT23

Contextual Info: BCR555 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=2.2k, R2=10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR555 XDs Pin Configuration 1=B 2=E Package 3=C SOT23

PIN CONFIGURATION IC 555

Abstract: IC 555 Ic digital 555 xds pnp 14 pin ic 555
Contextual Info: BCR 555 PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=10kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 555 XDs Pin Configuration 1=B 2=E Package

EH 14 A

Contextual Info: BCR555 PNP Silicon Digital Transistor • Built in bias resistor R1= 2.2 kΩ, R2= 10 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07183 Type BCR555 Marking XDs Pin Configuration 1=B 2=E Package SOT23

Contextual Info: BCR555 PNP Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 2.2 kΩ, R 2= 10 kΩ 1 C 3 R1 R2 1 2 B E EHA07183 Type BCR555 Marking XDs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings

Contextual Info: BSD314SPE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) -1.5 ID A • ESD protected PG-SOT-363 • Qualified according AEC Q101

fg wilson generator

Abstract: mn1880 bc511 MN187 BC513 BC515 MN1860 BC510 BC512 BC514
Contextual Info: MICROCOMPUTER MN101D00 MN101D02D/02E/02F/ 02G/02H LSI User’s Manual Pub.No.21502-020E PanaXSeries is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names,logotype and product names written in this book are trademarks or registered trademarks of their

Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 210 BUZ 211 Type </> • N channel • Enhancement mode • FREDFET h BUZ 210 500 V 10.5 A ^DS on 0.6 n BUZ 211 500 V 9.0 A 0.8 Q Package1) Ordering Code TO-204 AA C67078-A1102-A2 TO-204 AA C67078-A1100-A2 Maximum Ratings

BSD314SPE

Abstract: JESD22-A114 L6327
Contextual Info: BSD314SPE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-363 • Qualified according AEC Q101

BSD314SPE

Abstract: JESD22-A114 L6327
Contextual Info: BSD314SPE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-363 • Qualified according AEC Q101

M15098

Contextual Info: BSD314SPE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-363 • Qualified according AEC Q101

Contextual Info: BSD314SPE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-363 • Qualified according AEC Q101

LC863532C

Abstract: LC8633xx LC87F5cC8A DATA VISION LCD MODULE p34 LC863432C lc877b80a LC863524C LC709004A LC87F7bC8A DATASHEET LC863532C
Contextual Info: Microcontrollers 2008-6 Latest Information on SANYO Microcontrollers SANYO Microcontrollers - Expanding Human Potential The SANYO Semiconductor homepage features the latest information on SANYO microcontrollers to increase customer awareness of our products and ensure that they are

alternator regulator protocol BSS

Abstract: transistor 30028 transistor fcs 9012 Marconi 2030 service manual
Contextual Info: Power of Choice Programmable Power Supplies & Electronic Loads Catalog Headquartered in San Diego, California, AMETEK Programmable Power is the global leader in the design and manufacture of precision, programmable power supplies and electronic loads for R&D, ATE,

68HC000

Abstract: TLCS-68000 TMP68HC003 TMP68HC003DF-12 A23C D15C HC-003 6800-type
Contextual Info: T O S H IB A TMP68HC003 Part 6 T M P 6 8 H C 003 D F -12 T M P 6 8 H C 0 0 0 A SSP w ith P o w e r-D o w n Function Chapter 1 Outline Designed around the TMP68HC000 core, TMP68HC003 is equipped with a clock generator and power­ down function for low power consumption applications.

2SK150

Abstract: 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 SK 10 BAT 065
Contextual Info: 2 5 ,1 1 5 ' tJ n y n * v % i \ > m 8 i e w i m m ^ y v z & SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 2 5 ,1 2 - i 2 S K 15 ii it x o is « « « « * o 1 O D C , A C S S A * S !ttlE l« iffl O O ^ O X -1 7 f- •/