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TC55V4376FF

Abstract: TC55V4376FF-100
Contextual Info: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor

Contextual Info: TOSHIBA TC55V4336FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FFI is a 4,194,304-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 32 bits. It is designed for use as a secondary cache to support microprocessor

Contextual Info: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor

am79c940

Contextual Info: a Advanced Micro Devices Am79C940 Media Access Controller for Ethernet MACE DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ ■ ■ ■ Integrated Controller with 10BASE-T transceiver and AUI port Supports IEEE 802.3/ANSI 8802-3 and Ethernet standards

TC55V4376FFI-83

Contextual Info: TO SH IBA TC55V4376FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FFI is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor

TC55V4336FFI-83

Abstract: 032J
Contextual Info: TOSHIBA TC55V4336FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FFI is a 4,194,304-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 32 bits. It is designed for use as a secondary cache to support microprocessor

HM53461ZP-12

Abstract: HM53461ZP-10 53461P
Contextual Info: HM53461 Series 65,536-word x 4-bit Multiport CMOS Video RAM • DESCRIPTION H M 53461P Series The HM53461 is a 262,144-bit multiport memory equipped with a 64k-word x 4-bit Dynamic RAM port and a 256-word x 4-bit Serial A ccess Memory SA M port. The SA M port is connected to an internal 1,024-bit data register through a 256-word

Contextual Info: •HYUNDAI 128K X H Y 6 3 8 1 0 0 FAST SRAM 8 -b it PRELIMINARY DESCRIPTION The HY638100 is a high-speed 131,072 x 8-bits COMS static RAM fabricated using Hyundai’s high performance twin tub COMS process technology. This high reliability process coupled with high-speed circuit design techniques,

Contextual Info: M O S E L -V IT E L ie V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W R ITE C M O S D Y N A M IC R A M V53C664 P R E LIM IN A R Y 80/80L 10/10L Max. RAS Access Time, tR4f0 80 ns 100 ns Max. Column Address Access Time, (tr 4 a 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tpp)

Contextual Info: DALLAS SEMICONDUCTOR DS2130Q Voice Messaging Processor PIN ASSIGNMENT FEATURES • Per-channel voice messaging processor for digitized voice storage and retrieval DT1 CTT Vcc RST [ 2 PCMIN • High fidelity speech recording and playback at 8,12, 16, 24 and 32 Kbits/sec

Contextual Info: TO SH IBA TC55V16376FF-83,-75 TENTATIVE TO SHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V16376FF is a 18,874,368-bit synchronous Flow through static random access memory SR A M

Contextual Info: • A3623&3 Q0DS37L, TS1 « S O N Y SONY C X K 1 2 0 6 A M /A T M Video Signal Field Memory D escription The C X K 1 2 0 6 A M /A T M is a 3 -p o rt VRAM capable o f coping w ith both NTSC and PAL and o f storing pictures fo r one 8-bit field w ith tw o

Contextual Info: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628A Z Rev. 1.0 Feb. 7,1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is

ltls

Abstract: MARK M2W SI03 256kx4 vram IRFH fscj V52C4258
Contextual Info: JON i 2 '982 V V'TELIC V52C4258 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512 X 4 SAM HIGH PERFORMANCE V52C4258 80 10 Max. RAS Access Time, tnAC 80 ns 100 ns Max. CAS Access Time, (tcAc) 25 ns 25 ns Max. Column Address Access Time, (t*) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tPC)

83ADV

Contextual Info: TO SH IBA TC55V4376FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FFI is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor

Contextual Info: DIGITAL VIDEO & DIGITAL SIGNAL PROCESSING IC Handbook GEC P L E S S E Y SEMICONDUCTORS Foreword GEC Plessey Semiconductors has substantially increased its activities in Digital Video developments since the last issue of this handbook in December 1993 . A

CM7291

Abstract: DS2130 DS2130Q HD44238 HD44238C TSCC 1100 TONE RECEIVER DTMF MSB11
Contextual Info: SEMICONDUCTOR FEATURES • High fidelity speech recording and playback at 8, 12, 16, 24 and 32 Kbits/sec PIN ASSIGNMENT DT1 [ RST [ 2 27 PCM IN TMO [ 3 TM1 [ 4 26 P C M C LK 25 P C M FS DTO [ 5 24 PCM O UJ: AO [ 6 23 C S x: • Integral DTMF transceiver for remote touch-tone con­

TC55V4376FF

Abstract: TC55V4376FF-100
Contextual Info: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor

Contextual Info: FEATURES • High fidelity speech recording and playback at 8, 12, 16, 24 and 32 Kbits/sec • Integral DTMF transceiver for remote touch-tone con­ trol and dialing • Connects to popular PCM codec/filters for analog in­ terfacing • Direct PCM serial data bus interfaces to any of 32 pos­

DS2165Q

Contextual Info: DS2165/DS2165Q DALLAS SEMICONDUCTOR D S 2 1 6 5 /D S 2 1 6 5 Q 16/24/32Kbps ADPCM Processor FEATURES PIN ASSIGNMENT • Compresses/expands 64Kbps PCM voice to/from either 32Kbps, 24Kbps, or 16Kbps • Dual, fully independent channel architecture; device can be programmed to perform either: