V53C664 Search Results

ic ac 1501-12

Abstract: V53C664K10
Contextual Info: JUN i V 2 1982 PR ELIM IN A R Y V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B YTE W RITE C M OS D YN A M IC R AM VITELIC 80/80L 10/10L Max. RAS Access Time, tRAC 80 ns 100 ns Max. Column Address Access Time, (tCAA) 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tp c )

1501-12

Abstract: ac 1501-12 V53C664H
Contextual Info: V53C664H 64K x 16 BIT FAST PAGE MODE BYTE WRITE CMOS DYNAMIC RAM MOSEL VITELIC V53C664H 50 55 60 Max. RAS Access Time, tRAC 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA) 26 ns 28 ns 30 ns Min. Fast Page Mode Cycle Time, (tPC) 30 ns 32 ns 34 ns

ic ac 1501-12

Abstract: V53C664K10 DN-19 MCSI
Contextual Info: JUN i V 2 1982 PR ELIM IN A R Y V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B YTE W RITE C M OS D YN A M IC R AM VITELIC 80/80L 10/10L Max. RAS Access Time, tRAC 80 ns 100 ns Max. Column Address Access Time, (tCAA) 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tp c )

Contextual Info: M O S E L V ÏÏT E U C V53C664A 6 4 K x 16 BIT FAST PAGE MODE BYTE WRITE CMOS DYNAMIC RAM 60/60L 70/70L 80/S0L Max. RAS Access Time, tR A r 60 ns 70 ns 80 ns Max. Column Address Access Time, (tr 4 i ) 35 ns 40 ns 45 ns Min. Fasi Page Mode Cycle Time, (tp r )

Contextual Info: M O S E L -V IT E L ie V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W R ITE C M O S D Y N A M IC R A M V53C664 P R E LIM IN A R Y 80/80L 10/10L Max. RAS Access Time, tR4f0 80 ns 100 ns Max. Column Address Access Time, (tr 4 a 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tpp)

V53C664H

Contextual Info: MOSEL VITELIC PRELIMINARY V53C664H 64K X 16 FAST PAGE MODE BYTE WRITE CMOS DYNAMIC RAM HIGH PERFORMANCE 30 35 40 45 50 Max. RAS Access Time, tRAC 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA) 16 ns 18 ns 20 ns 22 ns 24 ns Min. Fast Page Mode Cycle Time, (tPC)

V53C664H

Abstract: mosel MT
Contextual Info: MOSEL VITELIC V53C664H 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W RITE CM OS D YN A M IC R A M V53C664H 50 55 60 Max. RAS Access Time, tRAC 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA) 26 ns 28 ns 30 ns Min. Fast Page Mode Cycle Time, (tpc)

gl 9608

Contextual Info: ST 1 VITELIC V53C664 64K x 16 B IT FAST PAGE MODE BYTE WRITE CMOS DYNAMIC RAM * PRELIMINARY 80/80L 10/10L Max. RAS Access Time, tRAC 80 ns 100 ns Max. Column Address Access Time, (tCAA) 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tp c ) 55 ns 65 ns Min. Read/Write Cycle Time, (tRC)

Contextual Info: bSE ]> m o s e l -vi tel ic MOSEL- VITELIC • bBSBBTl DGQnñS V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B Y T E W R ITE C M O S D Y N A M IC R A M V53C664 P R E L IM IN A R Y 80/80L 10/10L Max. RAS Access Time, tRAn 80 ns 100 ns Max. Column Address Access Time, (tr s 4)

Contextual Info: M O S E L V IT E L IC V53C664A 64K x 16 B IT FA ST PAGE MODE BYTE WRITE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L Max. RAS Access Time, tR A r 60 ns 70 ns 80 ns Max. Column Address Access Time, (tr l 4 ) 35 ns 40 ns 45 ns Min. Fast Page Mode Cycle Time, (tp r )

Contextual Info: IW VITELIC V53C664 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W R ITE C M O S D Y N A M IC R A M “ ADVANCED V53C664 80 ns 100 ns Max. RAS Access Time, tRAC 80 ns 100 ns Max. Column Address Access Time, (tCAA) 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tpc)

Contextual Info: M O SEL VTTEUC V53C664H 6 4 K x 16 BIT FAST PAGE MODE BYTE WRITE CMOS DYNAMIC RAM V53C664H 50 55 60 Max. RAS Access Time, tRAC 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA) 26 ns 28 ns 30 ns Min. Fast Page Mode Cycle Time, (tp c ) 30 ns 32 ns

OPL2

Abstract: RWA030 WAVETABLE MD152 MPU-401 RWA010 RWA011 RWA035
Contextual Info:
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   The Rockwell WaveArtist 010 RWA010 and WaveArtist 030 (RWA030) are audio system devices in small, low profile, PQFP/TQFP packages. These devices provide increasing functionality from FM synthesis

64K x 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

Abstract: V53C665
Contextual Info: MOSEL VITELIC V53C665 80 ns 100 ns Max. RAS Access Time, tRAC 80 ns 100 ns Max. Column Address Access Time, (tCAA) 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tPC ) 55 ns 65 ns Min. Read/Write Cycle Time, (tRC) 135 ns 170 ns Features • ■ ■ ■ ■

Contextual Info: MOSEL VÊTEUC V53C665 64K x 16 BIT FAST PAGE MODE WRITE-PER-BIT CMOS DYNAMIC RAM V53C665 80 ns 100 ns Max. RAS Access Time, tRAC 80 ns 100 ns Max. Column Address Access Time, (tCAA) 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tp c ) 55 ns 65 ns Min. Read/Write Cycle Time, (tRC)

creative sound blaster 5.1 circuit diagram

Abstract: RWA035 OPL2 MD151 MPU-401 RWA100 RWA300 rwa030 Y15203
Contextual Info:
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   The Rockwell WaveArtist 100 RWA100 WaveArtist 300 (RWA300) are complete audio system devices, each packaged in a low profile, small footprint, 208-pin ball grid array (BGA). These pin-compatible devices support a