X30S Search Results

Contextual Info: X30SG X40SG X50SG HIGH VOLTAGE RECTIFIERS 3,000nS RECOVERY y AXIAL LEADED HERMETICALLY SEALED = , RWM = T rr in. mm .350(8.89) Max. 3000-5000V i 50mA = 3,000nS 1.00(25.4) Min. .170(4.3) Max. •030±.003 (.77±.08) ELECTRICAL CHARACTERISTICS AND MAXIMUM RATI NGS

Contextual Info: WT-P178USDT High Power Light Source Product Specification Specification Total Flux Material Quantity Typ. 18lm @300mA/ Ta= 25℃ Lambda 615nm-630nm @300mA/ Ta= 25℃ VF 2.00V-2.60V @300mA/ Ta=25℃ IR WT standard Resin White Epoxy resin Tube WT standard Conductive

myson isp

Contextual Info: MYSON TECHNOLOGY MTV230M Application Note AP Note of MTV230M Development Tools 1. ICE TOOLS 1.1 Vender a Microtek : Easy Pack 8051 3.3 v ICE mode (b) HILO: 8051 ICE (c) Others : Users may use another standard 8051 ICE which supports 3.3V. 1.2 ICE board (Supported by Myson)

X50S

Contextual Info: VOLTAGE MULTIPLIERS INC 02 9514854 VOLTAGE MULTIPLIERS INC DE 1 153.4854 DGODtHS 1 | D T~Z3~0£> 62D 00095 M E D IU M RECOVERY HIGH VOLTAGE SILICON DIODES 1500 TO 10000V 100 TO 250 MA 3 U SEC REVERSE RECOVERY LOW REVERSE LEAKAGE . PART NUMBER - PEAK INVERSE

10SV47M

Abstract: 16SV56M 10SV10MN 10SV150M 20SV10M 20SV150M 16SV100M 16SV3R3MN 25SV22M 16SV15M
Contextual Info: １．シリーズ別仕様 New SV 縦型表面実装品（リフロータイプ） シリーズ New SVシリーズはESR値をラジアルタイプ並にし、大 容量化を図りました。 スイッチング電源の面実装化にご利用下さい。

fi-x30m

Contextual Info: B DATE Ä & REV. 0 s 9 0 0 ir s W . M. f i S DESCRIPTION DON NO. % 0 ± H S 1 OHK. DR. * 3 APPD. APPD. “ON 0NIMVÜQ -i-#ffla ( 6 .9 > +0. 2 4 .6 -0 . r«=- -CN SIGNAL SIDE o . n_n_n_n_n_n_n_n_n_n_n_n_n_n_n_n_n_n_n_n. . r n < . Q J A PC GROUND

Contextual Info: WT-P178NBU High Power Light Source Product Specification Specification Total Flux Material Quantity Typ. 13lm @350mA/ Ta= 25℃ Lambda 450nm-490nm @350mA/ Ta= 25℃ VF 3.03-3.99V @350mA/ Ta=25℃ IR WT standard Resin White Epoxy resin Tube WT standard Conductive

JIS-C-7022

Abstract: 2-1-16EIAJAB-6201 ic 353 JIS-C-7032 OKI g3 gs lead free EIAJ ED-4701 305 6201 xr MOS1-4-14 CCD MTBF JIS-C-7021
Contextual Info: J2S0001-27-Y4 作成：1998年 1月 前回作成：1996年 10月 まえがき 平素は沖半導体製品を御愛顧いただき、厚く御礼申し上げます。 急速な発展を遂げているエレクトロニクス産業におきまして、半導体製品の応用

DX-68-CV1

Abstract: CL230-0 250M AC125V CL313-0351-6 DX20A-68S CONNECTOR 1.27mm pitch 5 pin dip UL20276 30 AWG DC-50-CV UL20276 28 AWG CABLE
Contextual Info: DX SERIES HIGH-DENSITY I/O CONNECTORS General / * D X se rie s hig h -density I/O cn n ecto rs with b e llo w co n - varied and c o m p le te lines of H ig h -D e n s ity c o n n e c to rs ^ tacts are p e rfe c t for to m o rro w ’s m iniaturized e le ctro n ic

Contextual Info: Y XC4000, XC4000A, XC4000H Logic Cell Array Families ^ Product Description Features D e sc rip tio n • Third Generation Field-Programmable Gate Arrays - Abundant flip-flops - Flexible function generators - On-chip ultra-fast RAM - Dedicated high-speed carry-propagation circuit

Contextual Info: WT-P178BPU High Power Light Source Product Specification Specification Total Flux Material Quantity Typical 70lm @350mA/ Ta= 25℃ Correlated 3000K~9000K Color @350mA/ Ta=25℃ Temperature VF 3.03-3.99V @350mA/ Ta=25℃ IR WT standard Resin White Epoxy resin

diode 10000v

Contextual Info: VOLTAGE MULTIPLIERS INC 02 9 5 1 4 8 5 4 V O L T A G E M U L T I P L I E R S INC DE | TSlMflSH OGDOCHS 1 | 82 D 0 0 0 9 5 D T - 2 3 “ <9S MEDIUM RECOVERY HIGH VOLTAGE SILICON DIODES 1500 TO 10000V 100 TO 250 MA 3 U SEC REVERSE RECOVERY LOW REVERSE LEAKAGE

Contextual Info: High Power Light Source HT-N178TWV-XXXX-XX Harvatek High Power SMD LED Datasheet HT-N178TWV-XXXX-XX HT Part No. HT-N178TWV-XXXX-XX Tentative Product * Specifications are subject to changes for improvement without advance notice. Proprietary data, drawings, and

FI-XB30S-HF10

Abstract: FI-X30M-NPB FI-XB30S-HF
Contextual Info: Ä & REV. 0 s 9 0 0 ir s B DATE % W . M. f i S DESCRIPTION DON NO. DR. ± H S 1 OHK. * 3 APPD. APPD. “ON 0NIMVÜQ -i-#ffla ( 6 .9 > +0. 2 4 .6 -0 . r«=- -CN SIGNAL SIDE o . n_n_n_n_n_n_n_n_n_n_n_n_n_n_n_n_n_n_n_n. . r n < . Q J A PC GROUND SIDE

Contextual Info: High Power Light Source HT-R178BPU INTRODUCTION . 2 PRODUCT SPECIFICATION . 3

Contextual Info: WT-P178NGU High Power Light Source Product Specification Specification Total Flux Material Quantity Typ. 42lm @350mA/ Ta= 25℃ Lambda 510nm-550nm @350mA/ Ta= 25℃ VF 3.03V-3.99V @350mA/Ta=25℃ IR WT standard Resin White Epoxy resin Tube WT standard Conductive

SMD IC 2025 bl

Abstract: ssop64 D560 MK 50075 N QFP Package 128 lead .5mm DIP16-C-300-2 R400 S115 960f FPQ20
Contextual Info: J2T0011-38-60 ま え が き 平素は「沖半導体製品」を御愛用いただき厚く御礼 申し上げます。 エレクトロニクス分野におきましては 半導体製品 の応用はますます広がりをみせており、その性能 機

Contextual Info: JK z ^ z z E o r s %-n B DATE ft REV. DON & w. f l & DESCRIPTION NO. 12.Nov.2004 05G172 ADD A I TEM 27.Sep.2005 058325 ADD ITEM -o n oNiMvya £ DR. £ OH K. * S APPD. APPD. N . U C H I YAMA Y.YAHIRO K.H I S A T O M I T . URANO v wC CM ±0. ( N O T E 2 )