X-BAND POWER TRANSISTOR 100W Search Results

2sc2904 TRANSISTOR

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN E P IT A X IA L PLAN AR T Y P E D IS C R E T IO N 2SC2904 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. O U T L IN E D R A W IN G D im ensions in mm

2sc2904 TRANSISTOR

Abstract: 2SC2904 hf amplifier 100w T-40
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EP ITA X IA L PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2 S C 2 9 0 4 is a silicon N P N epitaxial planar type transistor Dimensions in mm sp e cific a lly designed fo r high pow er a m plifiers in H F band. R1 FEATURES

Sanyo STK 1080

Abstract: TRANSISTOR a45 stk 1080
Contextual Info: Ordering number : EN 4897 Thick Film Hybrid 1C STK401 -130 AF Power Amplifier Split Power Supply (100W + 100W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs unit: mm is that all ICs within a given product series are pin

D2694

Abstract: STK401-130
Contextual Info: Ordering number:ENN4897 Thick Film Hybrid IC STK401-130 2ch AF Power Amplifier Split Power Supply (100W + 100W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same

STK401-130

Abstract: power amplifier 100w diagram sanyo electrolytic capacitors
Contextual Info: Ordering number:ENN4897 Thick Film Hybrid IC STK401-130 2ch AF Power Amplifier Split Power Supply (100W + 100W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same

TPV8100B

Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TPV8100B Advance Information The RF Line UHF Linear Power Transistor 100W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . d e sign e d for output sta ge s in Band IV & V T V transmitter am plifiers. Internal m atch­

hp778d

Abstract: pm5171 RESISTOR CR25 RESISTOR CR25 philips MGP990 2222-809-05002 2222-121 philips capacitor cross reference PR52 BZY 56
Contextual Info: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with two transistors BLV33 ECO7904 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with two transistors BLV33 CONTENTS 1 ABSTRACT 2 INTRODUCTION

RESISTOR CR25 philips

Abstract: philips resistor CR25 hp778d pm5171 BZY 56 cr25 philips RESISTOR CR25 BLV33F 2222-809-05002 tv schematic diagram PHILIPS
Contextual Info: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with 2 transistors BLV33F ECO8005 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with 2 transistors BLV33F CONTENTS 1 ABSTRACT 2 INTRODUCTION

Pallet VHF Power Amplifier

Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
Contextual Info: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .

STK401-140

Abstract: STK401-000
Contextual Info: Ordering number:ENN4898 Thick Film Hybrid IC STK401-140 2ch AF Power Amplifier Split Power Supply (120W + 120W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same

sanyo wx series

Abstract: STK401-130 SANYO wx capacitor mg-250 STK400-010 STK401-010 sanyo wx
Contextual Info: Ordering num ber: EN4897 Thick Film Hybrid 1C STK401-130 Two-Channel AF Power Amplifier + power supply 100 W + 100 W Minimum, THD = 0.4% No. 4897 SA\YO i Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin

stk401-140

Contextual Info: Ordering number:ENN4898 Thick Film Hybrid IC STK401-140 2ch AF Power Amplifier Split Power Supply (120W + 120W min, THD = 0.4%) Overview Package Dimensions A major feature of Sanyo thick-film power amplifier ICs is that all ICs within a given product series are pin compatible. This allows users to construct a product line of amplifiers with differing power output capacities using the same

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

b 1367 rf transistor

Abstract: 28V1001
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza­ tions and offers a high degree of reliability and ruggedness.

2sc2904 TRANSISTOR

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC2904 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dim ensions in mm R1 FEATURES • High gain: Gpe ^ 1 1 -5dB

200w subwoofer circuit

Abstract: transistor subwoofer circuit diagram manual de transistores 200w subwoofer circuit pcb 2.1 subwoofer diagram 100w amp pcb 200W audio amplifier AMPLIFICADOR DE POTENCIA TRANSISTOR BC547 200w power amplifier PCB velleman K8060 200w subwoofer preamp diagram
Contextual Info: Total solder points: 74 Difficulty level: beginner 1 ¸ 2 ¸ 3 ¸ 4 ¸ 5 Z advanced 200W DISCRETE POWER AMPLIFIER K8060 or r system tre e k a e p s me thea r active Ideal fo guitar amp, ho , etc. fer, amp subwoo s, instrument m syste ILLUSTRATED ASSEMBLY MANUAL

UHF TRANSISTOR

Abstract: SG9101AC transistor Common collector configuration npn 28v 100w amplifier
Contextual Info: GAE GREAT AMERICAN ELECTROINCS SG9101AC Silicon NPN high power UHF transistor SG9101 AC Transistor Assembly is designed for Class C common base push-pull wide band output amplifier applications in the 350-700 Mhz frequency range. Output Power: Frequency Range:

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silico n RF Pow er Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metalliza­ tions and offers a high degree of reliability and ruggedness.

IC 2832

Abstract: TV power transistor
Contextual Info: ERICSSON ^ PTB 20081 150 Watts, 470-860 MHz UHF TV Power Transistor Description Key Features The 20081 is a class AB, NPN, common emitter RF Power Transistor intended for 28-32 VDC operation across the 470860 UHF TV Power MHz frequency band. It is rated at 100

Contextual Info: MITSUBISHI RF POWER TRANSISTOR DD l T b T ? 7bS 2SC3908 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3908 is a silicon NPN epitaxial planar type transistor designed for HF power amplifiers applications. Dimensions in mm FEATURES • High power gain: Gpe ^ 11.5dB

2SC2609

Abstract: 2Sc260 transistor z ss
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2609 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING M itsubishi 2SC 2609 is a silicon N PN epitaxial planar type transistor specifically deisgned for V H F power am plifier applications. Dim ensions in mm R1 FEATURES

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

2SC3908

Abstract: op 30MHZ PORCELAIN dust cap LC 7w RF POWER TRANSISTOR NPN 3 w RF POWER TRANSISTOR NPN
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3908 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 3908 is a silicon NPN epitaxial planar typ e transistor Dim ensions in m m designed fo r H F pow er am p lifie rs applications. R1 FEATURES • High pow er gain: G pe ^ 1 1 .5dB