X-BAND POWER TR Search Results

Contextual Info: X-BAND CAPACITORS MORE RF POWER MORE BANDWIDTH MORE CAPACITANCE Catalog 8100 X-BAND CAPACITORS PRESIDIO ADVANTAGE KEY FEATURES ✦ ✦ ✦ ✦ ✦ 3 Watts power handling at 8 GHz Transmission loss S21 about -0.2 dB up to X-Band 18 pF standard in 0402 footprint

Contextual Info: X-BAND CAPACITORS MORE POWER MORE BANDWIDTH MORE CAPACITANCE Catalog 8100 X-BAND CAPACITORS PRESIDIO ADVANTAGE KEY FEATURES ✦ ✦ ✦ ✦ ✦ 3 Watts power handling at 8 GHz Transmission loss S21 about -0.2 dB up to X-Band 18 pF standard in 0402 footprint

CPI Helix tube

Abstract: WRD-650 90 KW blower VTX6389L3 MIMIC control panel MKT-202
Contextual Info: CPI 1.0kW X-Band TWT Amplifier for Instrumentation Applications X- Band The VZX-2783C1 x-Band 1.0 kW TWT High Power Amplifier features high efficiency and power for EMC/EMI testing. Safety Provides 1000 watts of power in the 8.0 to 12.75 GHz frequency band in a compact 19inch rack-mount dual drawer configuration for

Contextual Info: X-BAND CAPACITORS MORE RF POWER MORE BANDWIDTH MORE CAPACITANCE Catalog 8100 X-BAND CAPACITORS PRESIDIO ADVANTAGE KEY FEATURES ✦ ✦ ✦ ✦ Transmission loss S21 about -0.2 dB up to X-Band 18 pF standard in 0402 footprint 33 pF standard in 0603 footprint

Contextual Info: X-BAND CAPACITORS MORE RF POWER MORE BANDWIDTH MORE CAPACITANCE Catalog 8100 X-BAND CAPACITORS PRESIDIO ADVANTAGE KEY FEATURES ✦ ✦ ✦ ✦ Transmission loss S21 about -0.2 dB up to X-Band 18 pF standard in 0402 footprint 33 pF standard in 0603 footprint

if mixer

Contextual Info: CONVERTER ASSEMBLIES S-BAND TO X-, Ku-BAND UPCONVERTER MODULE r SPECIFICATIONS IF input frequency 2 -4 GHz L0 input frequency 10 .12 and 14 GHz RF output frequency IF mixer "1 absorptive switch X-bard I O selector S-band IF input power divide^ X-band, Ku-band

AM7808CLT

Contextual Info: AM7808 AM7808HighEfficiency Quad-Band Tx Dual-Band Rx GSM/GPRS CMOS Tx Module High-Efficiency Quad-Band Tx Dual-Band Rx GSM/GPRS CMOS Tx Module Package: LGA, 5.25mm x 5.30mm x 0.80mm RX1 TM AdaptiveRF HB_IN Features  ANT Extended Power Added Efficiency

CHA5115-QDG

Abstract: AN0017 MO-220 x-band power amplifier a3688 A5115
Contextual Info: CHA5115-QDG RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added

amplifier 400W

Abstract: 400w amplifier miteq twt
Contextual Info: MT3400H ANTENNA MOUNT TRAVELING WAVE TUBE MEDIUM POWER AMPLIFIER C-BAND: X-BAND: Ku-BAND: DBS-BAND: 400W 400W 400W 270W MT3400H FEATURES: Operational Temperature of 60°C Weather Resistant Antenna Mount TWT Amplifier Typical Phase Noise 10 dB Below IESS-308

HIGH POWER SUITABLE x-BAND AMPLIFIER

Abstract: A5115 AN0017 MO-220 x-Band High Power Amplifier x-band power amplifier
Contextual Info: CHA5115-QDG RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added

Contextual Info: CHA5115-QDG RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added

SF1222D

Abstract: SF1222
Contextual Info: Preliminary SF1222D • Surface Mount 3.8 x 3.8 x 1.4 mm Package • Complies with Directive 2002/95/EC RoHS Pb Absolute Maximum Ratings Rating Value Units Input Power Level, Antenna in TX Band and TX in TX Band 25 dBm Input Power Level, RX in RX Band 20

X-band radar module

Abstract: MAAP-009748-000000
Contextual Info: MAAP-009748-000000 X-Band 17W Pulsed Power Amplifier Module 8.5 - 11.0 GHz 2010 Data Sheet v1 The most important thing we build is trust Features Description • Nominal 17W Peak Output Power The Cobham Sensor Systems X-Band 17W Module is a class A biased GaAs

500W TRANSISTOR

Abstract: hvvi
Contextual Info: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating

cpi 400W

Abstract: CPI twt tube 400 W VZX-6984A4 EN-60215 RF amplifier 400W amplifier 400W RF amplifier output 400W input 10 w am 5544
Contextual Info: 400W Compact Medium Power Amplifier for Satellite Communications X-Band The VZX-6984A4 400 Watt TWT Medium Power Amplifier— high efficiency in a compact package. X-Band Provides 400 watts of power in a 3 rack unit package, digital ready, for wideband, single- and

CHA7010

Abstract: x-Band High Power Amplifier
Contextual Info: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP

x-Band High Power Amplifier

Abstract: 10Ghz RF Power 10w amplifier CHA7010
Contextual Info: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP

RF Power Amplifier 125KHz

Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

Contextual Info: EMM5079X X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 23.5 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5079X is a wide band power amplifier MMIC that

EMM5079

Abstract: EMM5079X
Contextual Info: EMM5079X X / Ku-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 25 dBm Typ. •High Gain; GL = 23.5 dB(Typ.) •Wide Frequency Band ; 10.0 – 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5079X is a wide band power amplifier MMIC that

MMIC X-band amplifier

Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

RF1136

Abstract: RF113 RF327
Contextual Info: RF1136 BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features „ „ „ „ „ „ Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 dB PCS Band 0.30 dB High Isolation: Cell Band 28 dB PCS Band 22 dB

Contextual Info: RF1136 BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features       Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 dB PCS Band 0.30 dB High Isolation: Cell Band 28 dB PCS Band 22 dB

MIL-STD-188-164A

Abstract: MIL-STD-188-164 IESS-308 CPI 750 watt twt tube solar panels at satellites CPI 750 twt tube
Contextual Info: 750W Outdoor TWT Medium Power Amplifier for Satellite Communications X- Band The VZX-6987V7 X-Band 750 Watt TWT Medium Power Amplifier — high efficiency in an environmentally sealed compact package designed for outdoor operation Easy to Maintain Provides 750 watts of power in a rugged and