X-BAND LOW NOISE AMPLIFIERS Search Results

miteq amf

Abstract: Medium Power Amplifiers x-band power amplifier power amplifiers
Contextual Info: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input

Medium Power Amplifiers

Contextual Info: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input

Micro-X marking "K"

Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
Contextual Info: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz

Contextual Info: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)

Contextual Info: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)

MGF4964

Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496
Contextual Info: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)

MGF4963BL

Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
Contextual Info: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)

1 928 405 766

Abstract: GD-32 rogers 4403
Contextual Info: < Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.)

WR284* ISOLATOR

Abstract: MS3116E-10-6S WR340 flange dimensions
Contextual Info: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS

IG 057-2

Contextual Info: A m it s u b is h i MGFC4420D SERIES Die ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES The MGFC4420D Series super-low-noise HEMT (High Electron Mobility Transistor) is designed for use in X to K band low noise amplifiers. These devices feature a 0.25 x 150|am "T"

fet transistor a03

Abstract: MGFC4419
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G InGaAs HEMT DESCRIPTION The MGFC4419G low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. OUTLINE DRAWING FEATURES • Low noise figure NFmin. = 0.50dB (MAX.) • High associated gain

RO4350B ROGERS

Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
Contextual Info: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101

MGF4918D

Abstract: MGF4910D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d
Contextual Info: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to l< band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101

GaAs FET HEMT Chips

Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4453A InGaAs HEMT DESCRIPTION The M G FC4453A low-noise HEMT High Electron Mobility OUTLINE DRAWING Transistor is designed for use in X to K band amplifiers. Unit : u m FEATURES Low noise figure @ f=12GHz NFmin. = 0.40dB (TYP.)

MGF4310

Abstract: MGF4314D MGF4318D MGF4310D MGF4316D MGF4317D M5M27C102P MGF4317 MGF4318 MGF431
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic

35 micro-X Package MARKING CODE Q

Abstract: transistor equivalent book FOR D 1047 zo 607 MA marking code s22 microwave transistor siemens transistor GaAS marking 576 zo 607 CFY25 CFY25-20 CFY25-20P
Contextual Info: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

marking code s22

Abstract: zo 607 MA CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23P CFY25-P
Contextual Info: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

GM15

Abstract: 137 marking Micro-X
Contextual Info: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

MGF4310

Abstract: 6020M f491
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910F Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION The M GF4910F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic

SIFAM

Contextual Info: Page 1 of 2 980nm Pump WDMs C-band 1 x 2, 2 x 2 ports, 980/1550 nm operation Features and Benefits • Very low insertion loss • Proven reliability • Enables low noise figure SIFAM’s 980/1550nm WDM allows for combination of pump and signal in C-band 980 nm

mgf1908

Abstract: MGF1908A MGF1303B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1908A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1908A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and

MGF1802

Abstract: mgf431 MGF43180 mitsubishi mgf MGF1902B-65
Contextual Info: MGF431OD Series L1~o- o~i -oqof- SUPER LOW NOISE InOaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF431OD series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a

MGF1907

Abstract: MGF1907A mgf1302 MGF1302 equivalent
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1907A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1907A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and