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Mitsubishi Electric


Mitsubishi Electric MGF4964BL RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, P-Channel, High Electron Mobility FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	MGF4964BL		863			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MGF4964BL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGF4964 Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496 Contextual Info: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)	Original	mgf4964bl 20ghz 4000pcs mgf4964 +8micro-x marking "k transistor "micro-x" "marking" 3 low noise micro-x marking "k hemt marking k low noise gaas gd-32 mgf4964b mgf496	PDF
Contextual Info: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)	Original	mgf4964bl 20ghz 4000pcs	PDF
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	h-cx587-r ki-1311 mgf4937 mgfg5h1503 +8mgf4937am gd-32 mgfg5h1502 mgf0904 mgfc39v5964 mgf2430 mgf0909a ba012j1	PDF

Catalog Datasheet

Type

Document Tags

PDF

MGF4964

Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496
Contextual Info: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)

Original

mgf4964bl 20ghz 4000pcs mgf4964 +8

PDF

Contextual Info: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)

Original

mgf4964bl 20ghz 4000pcs

PDF

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

Original

h-cx587-r ki-1311 mgf4937 mgfg5h1503 +8

PDF