X K 39 Search Results

Contextual Info: High Performance 512KX8 / 2 5 6 KX16 5V CMOS Flash EEPROM •■ | | AS29F400 II 5 Ï2 K X 8 /2 5 6 K X 1 6 CMOS Flash EEPROM Preliminary information Features • O rg a n iza tio n : 5 1 2 K X 8 o r 2 5 6 K x l 6 • L o w p o w e r c o n s u m p tio n

C4368

Contextual Info: F# CYPRESS CY7C43626 CY7C43636/CY7C43646 CY7C43666/CY7C43686 PRELIM INARY 2 5 6 /5 1 2 / 1 K / 4 K / 1 6 K Features x 3 6 / x 1 8 x 2 T ri B u s F IF O Fully asynchronous and simultaneous read and write operation permitted Mailbox bypass register for each FIFO

Contextual Info: H i j j h P i - r f o r m a i K <.• L BB SV C M O S I la s h 1 I P R O M 2 A S 2 l> I ' 2 0 0 A S6K X 8/IZ8K x I6 6 K x 8 / I 2 8 K x 1 6 C M O S Jf /.isii I'I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture

Contextual Info: HB56H232 Series, HB56H132 Series HB56H232B/SB 8 MB EDO DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56H132B/SB 4 MB EDO DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI

Contextual Info: AS4LC256K16E0 A 3.3V 2 5 6 K X 16 CMOS DRAM EDO Features • 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh • Organization: 262,144 w ords x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns K K access tim e

Contextual Info: FLASH MEMORY B l I l i i 8 M 1 M x 8/512 K x 16 BIT MBM29 F800 T-90-X-12-X/MBM29 F 800 B-90-X-12-x • FEATURES

Contextual Info: HB56G232 Series, HB56G132 Series HB56G232B/SB 8 MB FP DRAM SIMM 2-Mword X 32-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 Components HB56G132B/SB 4 MB FP DRAM SIMM 1-Mword X 32-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M X 16 Components) HITACHI ADE-203-701C (Z)

am29f400bb

Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Contextual Info: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

Contextual Info: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

AMD Am29lv400bt

Contextual Info: Am29LV400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

a*29f10

Abstract: 22D9
Contextual Info: FINAL Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements

Contextual Info: I {oim lu 5 1 2 K 6 4 K x 8-BIT or 6 4 K x 9-BIT CMO S STATIC RAM MODULE Integrated Dev ic e Tec h n o lo g y Inc FEATURES: DESCRIPTION: • H ig h -d en sity 512 K-bit C M O S sta tic R A M m o d u le T h e ID T 7M 812/ID T7M 912 a re 512 K -blt h ig h -sp e e d C M O S

Contextual Info: Integrated Device Technology, Inc. 32K x 18 CacheRAM BURST COUNTER & SELF-TIMED WRITE — FOR THE PowerPC™ PROCESSOR PRELIMINARY IDT71419 DESCRIPTION: FEATURES: T h e ID T 7 1 4 1 9 is a v ery h ig h -s p e e d 3 2 K x 1 8 -b it static R A M • 3 2 K x 1 8 architectu re

Contextual Info: SIEMENS 256 K X 16-Bit Dynam ic RAM Low Power 256 K x 16-Bit Dynam ic RAM with Self Refresh HYB 514171BJ-60/-70/-80 HYB 514171BJL-60/-70/-80 Advanced Information • 262 144 words by 16-bit organization • 0 to 70 °C operating temperature • Fast access and cycle time

Contextual Info: FINAL AMDZ1 A m 2 9 F 1 0 0 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Sim plifies system-level power requirem ents

Contextual Info: FINAL AMDZ1 A m 2 9 F 1 0 0 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Sim plifies system-level power requirem ents

Contextual Info: [p [K ì@ y g T [F ^ E W Ö E W in te i 8-Mbit ( 5 1 2 K X 1 6 , 1 M X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at 12V VPP

Contextual Info: FLASH MEMORY 4 M 512 K x 8/256 K x 16 BIT M B M 29 F 400T C-55-70-90/M B M 29 F 400B C-55/-70-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

29F800TA

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY B lB 8 M 1 M X 8 /5 1 2 K X 1 6 B IT MBM29F800TA -55/-70/- 90/MBM29F800BA-55/-70/-90

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE7E MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank x 524,288-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: Package outline WLCSP39: wafer level chip-scale package; 39 balls; 2.66 x 3.765 x 0.38 mm B E NXH1501UK A ball A1 index area A A2 D A1 detail X e1 e3 e C C A B C Øv Øw b y e K J H G F E D C B A ball A1 index area e2 1 2 3 4 e4 X 3 mm scale Dimensions mm are the original dimensions

ERF 2030

Abstract: ERF 2030 mos fet c455 CY7C455 CY7C456 CY7C457 CY7C447 c4556 C4557
Contextual Info: / u h *f o . iviu i l u a y , w w i u u t i r p , 1 Revision: Tuesday, December 14,1993 C Y 7C 455 C Y 7C 456 C Y 7C 457 = = ^ C Y PR K SS p r e l im in a r y 512x18, lK x 18, and 2 K x l8 Cascadable Clocked FIFOs with Programmable Flags Features Functional Description

HM62A168CP-25

Abstract: HM62A168 HM62A188CP25R
Contextual Info: HM62A168, HM62A188 Series-Direct Mapped 8,192-Word x 16 18 -Bit/ 2-Way 4,096-Word x 16(18)-Bit Static Cache Memory • DESCRIPTION The H itachi H M 62A168/188 is a high speed 128(144)-k Cache memory organized as 2-way set a sso cia tive 4k x 16(18) or direct m apped 8k x