X K 39 Search Results

srx 2039

Abstract: BASE200 NT8GC72C4NG0NL
Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

srx 2039

Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

srx 2039

Abstract: JESD79-3E NT8GC72C4NG0NL
Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 / PC3-14900 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600/1866 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

LG01

Abstract: ZL50031 ZL50031QEG1
Contextual Info: ZL50031 Flexible 4 K x 2 K Channel Digital Switch with H.110 Interface and 2 K x 2 K Local Switch Data Sheet Features February 2005 • 4,096 x 2,048 blocking switching between backplane and local streams • 2,048 x 2,048 non-blocking switching between local streams

lg124

Contextual Info: MT90866 Flexible 4 K x 2.4 K Channel Digital Switch with H.110 Interface and 2.4 K x 2.4 K Local Switch Data Sheet Features February 2005 • 2,432 x 2,432 non-blocking switching among local streams • 4,096 x 2,432 blocking switching between backplane and local streams

lidr-9

Abstract: MO-151 MT90866 MT90866AG MT90866AG2 ST012 G7-G14
Contextual Info: MT90866 Flexible 4 K x 2.4 K Channel Digital Switch with H.110 Interface and 2.4 K x 2.4 K Local Switch Data Sheet Features September 2005 • 2,432 x 2,432 non-blocking switching among local streams • 4,096 x 2,432 blocking switching between backplane and local streams

LG01

Abstract: ZL50030 ZL50030GAC
Contextual Info: ZL50030 Flexible 4 K x 2 K Channel Digital Switch with H.110 Interface and 1 K x 1 K Local Switch Data Sheet Features February 2005 • 4,096 x 2,048 blocking switching between backplane and local streams • 1,024 x 1,024 non-blocking switching between local streams

lidr-9

Abstract: CH254 MO-151 MT90866 MT90866AG MT90866AG2 ST012 dom2 ZL50031
Contextual Info: MT90866 Flexible 4 K x 2.4 K Channel Digital Switch with H.110 Interface and 2.4 K x 2.4 K Local Switch Data Sheet Features January 2006 • 2,432 x 2,432 non-blocking switching among local streams • 4,096 x 2,432 blocking switching between backplane and local streams

LG01

Abstract: ZL50031 ZL50031QEG1 lg1001
Contextual Info: ZL50031 Flexible 4 K x 2 K Channel Digital Switch with H.110 Interface and 2 K x 2 K Local Switch Data Sheet Features February 2005 • 4,096 x 2,048 blocking switching between backplane and local streams • 2,048 x 2,048 non-blocking switching between local streams

LG01

Abstract: ZL50030 ZL50030GAC ZL50030GAG2
Contextual Info: ZL50030 Flexible 4 K x 2 K Channel Digital Switch with H.110 Interface and 1 K x 1 K Local Switch Data Sheet Features January 2006 • 4,096 x 2,048 blocking switching between backplane and local streams • 1,024 x 1,024 non-blocking switching between local streams

st020

Abstract: TFR2M
Contextual Info: MT90866 Flexible 4 K x 2.4 K Channel Digital Switch with H.110 Interface and 2.4 K x 2.4 K Local Switch Data Sheet Features January 2006 • 2,432 x 2,432 non-blocking switching among local streams • 4,096 x 2,432 blocking switching between backplane and local streams

Contextual Info: ZL50030 Flexible 4 K x 2 K Channel Digital Switch with H.110 Interface and 1 K x 1 K Local Switch Data Sheet Features January 2005 • 4,096 x 2,048 blocking switching between backplane and local streams • 1,024 x 1,024 non-blocking switching between local streams

CY14a101

Abstract: CY14A101L
Contextual Info: CY14V101LA CY14V101NA 1 Mbit 128 K x 8/64 K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128K x 8/64K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 128 K x 8 (CY14B101LA) or 64 K x 16 (CY14B101NA) ■ Hands off automatic STORE on power down with only a small

Contextual Info: CY14V104LA CY14V104NA 4-Mbit 512 K x 8 / 256 K x 16 nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 512 K x 8 (CY14V104LA) or 256 K x 16 (CY14V104NA) ■ Hands off automatic STORE on power down with only a small

CY14B101LA-SZ45XI

Abstract: CY14B101LA-SZ25XI
Contextual Info: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features • Packages ❐ 32-Pin small-outline integrated circuit (SOIC) ❐ 44-/54-Pin thin small outline package (TSOP-II) ❐ 48-Pin shrink small-outline package (SSOP)

.5555b

Abstract: 29F200 29F200 flash AS29 29f200 70 08000h-OFFFFh 29F200-55 29f200-90 AS29F200T
Contextual Info: H ig h p e r f o r m a n c e 2 S 6 K X 8 /1 2 8 K X 16 5V CM OS Flash EEPROM a | AS29F200 A 2 5 6 K X 8 /1 2 8 K X 1 6 CMOS Flash EEPROM Preliminaiy information Features • O r g a n iz a t io n : 2 5 6 K X 8 o r 1 2 8 K X 1 6 • S e c to r a r c h ite c tu r e

f650

Abstract: UPA54H DIODE GOC 63 411K PA54H diode 3L DIODE T420 LT 745 S t802 t514
Contextual Info: NEC j m + T / v r x K 7 K Diode A rra y A u X l f * * v T ; u ^ v U K 7 P A 5 4 H K K & Ä X - T ^ V ^ J S Silicon Epitaxial Diode Array High Speed Switching / ¿ P A 54H f ± , v S IP fc, # '/ — K Ä S Ä iS X ^ IJ y y ? *• - K 7 W (6 * ^ -) « • » H / P A C K A G E D IM EN SIO N S

Contextual Info: FLASH MEMORY B l I l i 4 M 512 K x 8 /256 K x 16 BIT M BM29 F400TA/BA-90-X/-12-x • FEATURES • •

Contextual Info: 8 *£ g£ •=j ^ & ? V 'y *tr f x m'&'S: u-~Fitti 'y ^ -< >ffl ^ 'V twiÄÄi^ . > *c 'V ’ ^ “7* U' K* : ^ S t A r K U ^ •S-^ jx. ;U :$W , 'V ;U > >y^• U ^ ^ £> 3 V* W- & * ÏÄÖ5J 'V ¿r -Ttr-Y K y-!r'y I« > 'y *ï 2. — -*X-1 791 39-X, X-1 791 40-X

MD3905

Abstract: d3910
Contextual Info: 2/5/10MHz V/F Converters M O m W O m W W W C W C W K 'V ö W K f rX iW K W iW X frJiW C W iW iX :v X W » X W « » K W « » X W O « O X O ¡v X vX O X W W O X W W W X W W W X W i' •:« > » x iw x o x iw x w i« « i« i« » x ;v X ^ frM frM W » W W W m fr

Contextual Info: PRELIMINARY CMOS VIDEO RAM KM428C128 12 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung K M 4 2 8 C 1 2 8 is a CMOS 1 2 8 K X 8 bit Dual Port DRAM. It consists ot a 1 2 8 K X 8 dynamic random

JESD79-3E

Abstract: 512Mx8 NT8GC72C4PC0NL D21-D20 512Mx8 SPD
Contextual Info: NT4GC72B89C0NL K / NT4GC72C89C0NL(K) NT8GC72B4PC0NL(K) / NT8GC72C4PC0NL(K) / NT8GC72B8PC0NL(K) / NT8GC72C8PC0NL(K) NT16GC72B4NC0NL(K) / NT16GC72C4NC0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM

JESD-79

Abstract: ddr3 2133 jesd79 JESD79-3E
Contextual Info: NT4GC72B89C0NL K / NT4GC72C89C0NL(K) NT8GC72B4PC0NL(K) / NT8GC72C4PC0NL(K) / NT8GC72B8PC0NL(K) / NT8GC72C8PC0NL(K) NT16GC72B4NC0NL(K) / NT16GC72C4NC0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM