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    X BAND POWER AMPLIFIERS Search Results

    X BAND POWER AMPLIFIERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM759H/B
    		Rochester Electronics LLC LM759 - Power Operational Amplifier PDF Buy
    LM759CH
    		Rochester Electronics LLC LM759 - Power Operational Amplifier, MBCY8 PDF Buy
    HA2-2541-2
    		Rochester Electronics LLC HA2-2541 - Operational Amplifier PDF Buy
    LM1536J/883
    		Rochester Electronics LLC LM1536 - Operational Amplifier - Dual marked (7800304PA) PDF Buy
    TLC32044EFN
    		Rochester Electronics LLC TLC32044 - Voice-Band Analog Interface Circuits PDF Buy

    X BAND POWER AMPLIFIERS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK25V4045 MGFK25V4045 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK30V4045 14.0 – 14.5 GHz BAND / 1.1W DESCRIPTION The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK30V4045 MGFK30V4045 350mA PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK39V4045 14.0 – 14.5 GHz BAND / 8W DESCRIPTION The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK39V4045 MGFK39V4045 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFX39V0717 10.7 – 11.7 GHz BAND / 8W DESCRIPTION The MGFX39V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFX39V0717 MGFX39V0717 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK35V4045 MGFK35V4045 PDF

    35W amplifiers

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK35V4045 MGFK35V4045 35W amplifiers PDF

    5.5w

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 – 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK37V4045 MGFK37V4045 5.5w PDF

    MGFX39V0717

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFX39V0717 10.7 – 11.7 GHz BAND / 8W DESCRIPTION The MGFX39V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFX39V0717 MGFX39V0717 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFX36V0717 10.7 – 11.7 GHz BAND / 4W DESCRIPTION The MGFX36V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFX36V0717 MGFX36V0717 PDF

    DBS-1011N530

    Abstract: 1011n Electromechanical
    Contextual Info: Main Menu Power Meters/Monitors RF Radiation Safety Products Active Components Passive Components Electromechanical RF Switches Wireless Products Standard Communication Band Amplifiers X-BAND, HIGH POWER LINEAR AMPLIFIERS SPECIFICATIONS MODEL NUMBER FREQUENCY


    Original     		DBS-0910N530 DBS-1011N530 DBS-1011N530 1011n Electromechanical PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK39V4045 14.0 – 14.5 GHz BAND / 8W DESCRIPTION The MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK39V4045 MGFK39V4045 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK37V4045 14.0 – 14.5 GHz BAND / 5.5W DESCRIPTION The MGFK37V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK37V4045 MGFK37V4045 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK38A3745 MGFK38A3745 50GHz PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK30V4045 14.0 – 14.5 GHz BAND / 1.1W DESCRIPTION The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK30V4045 MGFK30V4045 350mA PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK25V4045 MGFK25V4045 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK33V4045 MGFK33V4045 700mA PDF

    MGFX36V

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFX36V0717 10.7 – 11.7 GHz BAND / 4W DESCRIPTION The MGFX36V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFX36V0717 MGFX36V0717 MGFX36V PDF

    F1375

    Abstract: 9137 006 208 MGFK38A3745
    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK38A3745 MGFK38A3745 50GHz 100ohm F1375 9137 006 208 PDF

    KU band rf amplifiers

    Abstract: mgfk41a4045
    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK41A4045 14.0 – 14.5 GHz BAND / 12W DESCRIPTION OUTLINE DRAWING The MGFK41A4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK41A4045 MGFK41A4045 41dBm KU band rf amplifiers PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK41A4045 14.0 – 14.5 GHz BAND / 12W DESCRIPTION OUTLINE DRAWING The MGFK41A4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK41A4045 MGFK41A4045 41dBm PDF

    MGF1801

    Contextual Info: < High-power GaAs FET small signal gain stage > MGF1801B S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures


    Original     		MGF1801B MGF1801B, 23dBm 100mA MGF1801 PDF

    MGF1801BT

    Contextual Info: < High-power GaAs FET small signal gain stage > MGF1801BT S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures


    Original     		MGF1801BT MGF1801BT, MGF1801BT 23dBm 100mA PDF

    MGF1601B

    Abstract: MGF1601
    Contextual Info: < High-power GaAs FET small signal gain stage > MGF1601B S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures


    Original     		MGF1601B MGF1601B, 100mA MGF1601B MGF1601 PDF

    Contextual Info: < X/Ku band internally matched power GaAs FET > MGFK44A4045 14.0 – 14.5 GHz BAND / 25W DESCRIPTION unit : m m OUTLINE The MGFK44A4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFK44A4045 MGFK44A4045 44dBm PDF