WSF41632 Search Results

WSF41632-22XX

Abstract: wsf41632 WSF41632-22H2X
Contextual Info: White Electronic Designs WSF41632-22XX PRELIMINARY* 128KX32 SRAM & 512Kx32 FLASH MIXED MODULE FEATURES Built-in decoupling caps and multiple ground pins for low noise operation Access times of 25ns SRAM and 120ns (FLASH) Weight - 13 grams typical Packaging

Contextual Info: a WSF41632-22XX WHITE /MICROELECTRONICS 128Kx32 SRAM & 512Kx32 FLASH MIXED MODULE PRELIM INARY * FEATURES FLASH MEMORY FEATURES • A c c e s s T i m e s o f 2 5 n s S R A M a n d 1 2 0 n s (FLASH) ■ 1 0 ,0 0 0 E r a s e /P r o g ra m C yc le s ■ P a c k a g in g

WSF41632-22XX

Contextual Info: WSF41632-22XX White Electronic Designs 128KX32 SRAM & 512Kx32 FLASH MIXED MODULE FEATURES PRELIMINARY* • Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Access Times of 25ns SRAM and 120ns (FLASH) ■ Weight - 13 grams typical

Contextual Info: TT WSF41632-22XX M/HITE /MICROELECTRONICS 128Kx32 SRAM & 512Kx32 FLASH MIXED MODULE PRELIMINARY* FEATURES FLASH MEMORY FEATURES • A cce ss Tim e s o f 25ns SRAM and 120ns (FLASH) ■ 10,000 Era se/Pro gra m Cycles ■ Packaging ■ S e cto r A rc h ite c tu r e

Contextual Info: TT WSF41632-22XX M/HITE /MICROELECTRONICS 128Kx32 SRAM & 512Kx32 FLASH MIXED MODULE PRELIMINARY* FEATURES FLASH MEMORY FEATURES • A cce ss T im e s o f 25ns SRAM and 120ns (FLASH) ■ ■ ■ Sector A rc h ite c tu re • 8 equal size sectors o f 64K Bytes each

Contextual Info: WSF41632-22H2X WHITE /MICROELECTRONICS 128Kx32 SRAM & 512Kx32 FLASH MIXED MODULE PRELIM INARY * FEATURES FLASH MEMORY FEATURES • A c c e ss T im e s of 25 nS S R A M and 120nS (FLASH) ■ ■ Packaging ■ S e c to r A rc h ite c tu re 10,000 E ra s e /P ro g ra m Cycles

WSF41632-22XX

Contextual Info: WSF41632-22XX 128KX32 SRAM & 512Kx32 FLASH MIXED MODULE PRELIMINARY* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 120ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Packaging • 66-pin, PGA Type, 1.385 inch square HIP, Hermetic Ceramic HIP (Package 402)

Contextual Info: WSF41632-22H2X WHITE /MICROELECTRONICS 128Kx32 SRAM & 512Kx32 FLASH MIXED MODULE PRELIM INARY# FEATURES FLASH MEMORY FEATURES • Access Times of 25nS SRAM and 120nS (FLASH) ■ 10,000 Erase/Program Cycles ■ Packaging • 66-pin, PGA Type, 1.385 inch square HIP, Hermetic

WSF41632-22XX

Contextual Info: White Electronic Designs WSF41632-22XX PRELIMINARY* 128KX32 SRAM & 512Kx32 FLASH MIXED MODULE FEATURES „ Access times of 25ns SRAM and 120ns (FLASH) „ Packaging • 66 pin, PGA Type, 1.385" square HIP, hermetic ceramic HIP (Package 402) „ Built-in decoupling caps and multiple ground pins

Contextual Info: WSF41632-22XX PRELIMINARY* 128KX32 SRAM & 512Kx32 FLASH MIXED MODULE FEATURES FLASH MEMORY FEATURES  Access times of 25ns SRAM and 120ns (FLASH)  100,000 erase/program cycles minimum  Packaging  Sector architecture • 66 pin, PGA Type, 1.385" square HIP, hermetic ceramic

70150SC

Contextual Info: M/HITE M IC R O E L E C T R O N IC S m WSF41632-22H2X 128Kx32 SRAM & 512Kx32 FLASH MIXED MODULE PRELIMINARY* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns S R A M and 120ns (FLASH) ■ ■ Packaging ■ Sector Architecture • 66-pin, PGA Type, 1.385 inch square HIP, Hermetic

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

29f040b

Abstract: teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6
Contextual Info: White Electronic Designs Table Of Contents Product Overview . 2 Commitment . 3

WF512K32-XXX5

Abstract: WMF512K8-XXX5 WSF41632-22XX WSF512K16-XXX WSF512K32-XXX
Contextual Info: FLASH MEMORY OPERATION 4M5 ○ ○ ○ In the standby mode the outputs are in a high impedance state, independent of the OE input. ○ ○ ○ ○ Standby Mode If the device is deselected during erasure or programming, the device will draw active current until