WS064 Search Results

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

WS128N

Abstract: WS128P FTA084 S29WS064J S29WS128J TLA084 S29WS128J0PBFW010
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA May 19, 2006 Advanced Change Notification No: Subject: 2609 Obsolescence of the S29WS128J, WS064J, S71WS128J, and WS064J Spansion LLC is announcing the planned obsolescence of the S29WS128J, WS064J, S71WS128J,

S29WS128J-MCP

Abstract: S29WS128J S29WS-J S29WS064J
Contextual Info: S29WS-J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet S29WS-J Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,

S29WS256N

Abstract: WS128N Am29BDSxxxG Am29BDDxxxG
Contextual Info: Migration to the S29WS256N Family 1.8 Volt Simultaneous Read/Write Burst Mode Flash Memory Application Note Introduction The S29WSxxxN is the latest advancement in the SpansionTM line of high speed, low voltage, Simultaneous Read/Write, Burst Mode devices. Following in the footsteps of our earlier Burst Mode parts, the S29WSxxxN family is a natural step

SA047

Contextual Info: S29WS-N MirrorBit Flash Family S29WS256N, S29WS128N, WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst

S71WS512ND0BFWEP

Abstract: LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CELLULAR RAM ADVANCE INFORMATION Datasheet Distinctive Characteristics

ws512P

Abstract: D1191 SA517 S29WS-P SA516 d1271 s29ws S29WS128P S29WS256P S29WS512P
Contextual Info: S29WS-P MirrorBit Flash Family S29WS512P, S29WS256P, S29WS128P 512/256/128 Mb 32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory S29WS-P Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

TRANSISTOR BFW 11

Abstract: S29WS-N transisTOR C124 064N S29WS064N S29WS128N S29WS256N WS064 SA047-SA050
Contextual Info: ADVANCE INFORMATION S29WS-N MirrorBit Flash Family S29WS256N, S29WS128N, WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Notice to Readers: The Advance Information status indicates that this

SA266-4

Abstract: S71WS128JB0 S71WS128JC0 S71WS256JC0 S71WS-J FBGA 12x12 TRAY
Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP Package-on-Package (PoP) 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this

SA047

Contextual Info: WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

MX29GL256

Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
Contextual Info: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes

COSMO MARKING

Abstract: S71WS128JB0 S71WS128JC0 S71WS256JC0 WS128J cosmo MARKING CODE COSMO DEVICE MARKING COSMO DEVICE MARKING DATE cosmoram synchronous
Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM ADVANCE DATASHEET Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

BAX55

Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

WS128N

Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

S29WS128N

Abstract: S29WS S29WS256N S29WS-N
Contextual Info: S29WS-N MirrorBitTM Flash Family S29WS256N, S29WS128N 256/128 Megabit 16/8 M x 16 bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory Data Sheet PRELIMINARY Notice to Readers: This document states the current technical specifications

WS1290A

Abstract: WS0790A
Contextual Info: WS Screw Insulator • U sed as a screw insulator and in many bushing applications • Lightweight • Resistant to corrosion and abrasion • High dielectric strength Material: UL94 V-2 Nylon 6/6 Color: Natural Standard Pack: 1,000 per bag Part No. WS0010A

064J

Abstract: 25D1 3G2H 8-R 2R2 VBR080 WZR device marking marking w53
Contextual Info: S29WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Distinctive Characteristics $UFKLWHFWXUDO $GYDQWDJHV +DUGZDUH )HDWXUHV „ 6LQJOH  YROW UHDG SURJUDP DQG HUDVH  WR  YROW

TCMS

Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
Contextual Info: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

TCMS

Abstract: TRANSISTOR BFW 11 pin diagram S73WS256N marking code qa1 148
Contextual Info: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION

S73WS256N

Abstract: WS128N SA173
Contextual Info: S73WS256N based MCPs Stacked Multi-Chip Product MCP 256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Address/Data Bus ADVANCE Distinctive Characteristics

101110

Abstract: ws256n spansion S29WS064N S29WS128N S29WS256N WS128N 064N
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this