064J Search Results

Contextual Info: S29WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Publication Number S29WS-J_00 Revision A Amendment 5 Issue Date March 31, 2006 Notice On Data Sheet Designations 6SDQVLRQ //& LVVXHV GDWD VKHHWV ZLWK $GYDQFH ,QIRUPDWLRQ RU 3UHOLPLQDU\ GHVLJQDWLRQV WR DGYLVH

064J

Abstract: 25D1 3G2H 8-R 2R2 VBR080 WZR device marking marking w53
Contextual Info: S29WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Distinctive Characteristics $UFKLWHFWXUDO $GYDQWDJHV +DUGZDUH )HDWXUHV „ 6LQJOH  YROW UHDG SURJUDP DQG HUDVH  WR  YROW

Contextual Info: S29WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Architectural Advantages Performance Characteristics „ Single 1.8 volt read, program and erase (1.65 to

WS128J

Abstract: S29WS064J S29WS-J S29WS128J S29WS128J-MCP
Contextual Info: S29WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Distinctive Characteristics Architectural Advantages Hardware Features „ Single 1.8 volt read, program and erase (1.65 to 1.95 volt)

Contextual Info: S29WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory ADVANCE INFORMATION Notice to Readers: This document contains information on one or more products under development at Spansion LLC. The information is intended to

064J

Abstract: DASP
Contextual Info: SimpleTech P/N: SLFDMpqr-064J U (I) (where p=connector; q=LP if low profile; r=plug-in and housing; U=RoHS compliant lead-free; I=Ind. Op. Temp;) 64MB Solid-State Flash Disk Module Horizontal Plug-In Vertical Plug-In GENERAL DESCRIPTION This SimpleTech product is a solid-state Flash Disk Module

SLFLD25-064

Abstract: 064J
Contextual Info: SimpleTech P/N: SLFLD25-064J U (I) (where U=RoHS compliant lead-free; I=Ind. Op. Temp) 64 MB 2.5-Inch IDE Flash Drive GENERAL DESCRIPTION The SimpleTech SLFLD25-064J(U)(I) is a solid-state flash IDE drive with a capacity of 64MB and in a standard 2.5inch form factor. The IDE drive consists of an IDE

S29WS128J-MCP

Contextual Info: S29WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Architectural Advantages Performance Charcteristics „ Single 1.8 volt read, program and erase (1.65 to

Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

S29WS128J-MCP

Abstract: S29WS128J S29WS-J S29WS064J
Contextual Info: S29WS-J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet S29WS-J Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,

SPANSION S29GL128

Abstract: 064J S29GL128 S29WS064J S29WS128J S29WS256P S29WS-P
Contextual Info: Understanding AC Characteristics Application Note By Russell Hanabusa 1. Introduction Obtaining the maximum performance from Flash devices requires a clear understanding of their AC characteristics. AC characteristics define the bus cycle timing of the Flash. This application note provides a

Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static

SA266-4

Abstract: S71WS128JB0 S71WS128JC0 S71WS256JC0 S71WS-J FBGA 12x12 TRAY
Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP Package-on-Package (PoP) 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this

COSMO MARKING

Abstract: S71WS128JB0 S71WS128JC0 S71WS256JC0 WS128J cosmo MARKING CODE COSMO DEVICE MARKING COSMO DEVICE MARKING DATE cosmoram synchronous
Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM ADVANCE DATASHEET Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this

Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO

Contextual Info: LATTICE SEMICONDUCTOR Lattice SSE D • SSèWì DDDSMflG ÔDS « L A T ispLSr 1048/883 in-system programmable Large Scale Integration High-Oensity Programmable Logic — Features - F ^ d 'r t - o l - Functional Block Diagram • IN-SYSTEM PROGRAMMABLE HIGH-DENSITY LOGIC

til 081

Abstract: DODD111 OP161SL OP161SLA OP161SLB OP161SLC OP161SLD
Contextual Info: OPTEK TE CH NOLOGY INC DtE D | U7TASÛ0 DODDllO T | T-m-u Optoelectronics 'bivision T R W Electronic Components Group T R 'wY Product Bulletin 5048 January 1985 G a A s Plastic Infrared Em ittin g Diodes Types O P 16 1S L , O P 16 1S LD , O P 16 1S LC , O P 16 1S LB , O P 16 1S L A

Contextual Info: 4 2 DRAWING M A D E IN THIRD AN GL E PROJECTION THIS DRAWING IS UNPUBLISHED. COPY RI GH T 19 LOC RELEASED FOR PUBLICATION BY AMP INCORPORATED. DIST AF ALL INTERNATIONAL RI GHTS RESERVED. REVISIONS 50 ZONE LTR DE SC RI PT IO N REL -1 DATE PER 0 7 1 0 -0 0 2 0 -9 6

4a2g

Abstract: L8212 S71WS-J
Contextual Info: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO

Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

S71PL064JA0

Abstract: S71PL064JB0 S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 PL032J Spansion s29pl127j
Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM

Contextual Info: LATTICE SEMICONDUCTOR Lattice SSE D • SSèWì DDDSMflG ÔDS « L A T ispLSr 1048/883 in-system programmable Large Scale Integration High-Oensity Programmable Logic — Features - F ^ d 'r t - o l - Functional Block Diagram • IN-SYSTEM PROGRAMMABLE HIGH-DENSITY LOGIC