WRITE Search Results

i486

Contextual Info: SN74BCT2141 2-WAY 8K x 18 SYNCHRONOUS CACHE DATA RAM D3613. A UG UST 1990 2-Way 8K x 18 Bit Architecture FN PACKAGE TOP VIEW Synchronous Read and Write Access at 50 MHz Clock Frequency Incorporates Burst Counter for Burst-Read (Read-Hit) Cycles or Burst-Write (Line-Fill)

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

TD-172

Abstract: 3B3 diode TOLD9151MB
Contextual Info: TOSHIBA VLD Technical Data TOLD9151MB Units in: mm • Small package high power index guided type M Q W InGaAlP V L D ■ Package flange: 05.6m m ■ Applications include: Read/write optical disk systems *5 .6 Surface ^ Pin Connection 0.03 * 4 .4 M A X 5 i

74170

Abstract: OF IC 74170
Contextual Info: TTL MSI TYPES SN54170, SN54LS170. SN74170, SN74LS170 4-BY-4 REGISTER FILES WITH OPEN-COLtECTOR OUTPUTS B U L L E T IN N O , D L -S 7 6 1 1 3 4 9 , M A R C H 1 9 7 4 — R E V IS E D O C T O B E R 1 9 7 6 • Separate Read/Write Addressing Permits Simultaneous Reading and Writing

CT 2048

Abstract: D8228
Contextual Info: SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L 2048 x 9,4096 x 9,8192 x 9,16384 x9 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES SCAS226A - FEBRUARY 1993 - REVISED SEPTEMBER 1995 Reads and Writes Can Be Asynchronous or Coincident Organization: - SN74ACT7203L - 2048 x 9

TIS152

Contextual Info: TLS1521 THIN-FILM 6-CHANNEL READ/WRITE PREAMPLIFIER D3625, DECEM BER 1 990-R E V IS E D MARCH 1991 • Differential Input Capacitance . . . 35 pF Typ • Low Input Noise Voltage . . . 0.5 nV/VRz Typ FN PACKAGE TOP VIEW 9 z • o o <••> > y o 2 1 x

um611864

Contextual Info: a S amar a a P R E L IM IN A R Y - UM611864 64K X 18 Bit Synchronous High Speed CMOS SRAM Features Single +5V power supply Fast access times: 9/11 ns Current: Operating: 275mA Standby: 95mA Synchronous self-timed write Individual byte write control Asynchronous output enable

E5550 temic

Contextual Info: Tem ic e5550 Semiconductors Standard Read/Write Identification IC Description The e5550 is a contactless R/W-IDentification IC IDIC * for general-purpose applications in the 125 kHz range. A single coil, connected to the chip, serves as the IC's power supply and bidirectional communication

Contextual Info: OJ bq4014/bq4014Y UNITRODE- 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-protection dur­ ing power-up/power-down cycles >• Industry-standard 32-pin 256K x 8 pinout >• Conventional SEAM operation; unlimited write cycles

Contextual Info: CD 9 8 .5 0 IO 1 5 .0 0 O r-. Tu CIRCUIT WP WP O- GROUND 0— O D GROUND CD OWITHOUT CARD CARD INSERTED WRITE PROTECT : LOCK CARD INSERTED WRITE PROTECT UNLOCK PATTERN PROHIBITED AR TYCO LOGO & PART NUMBER & DATE CODE o cu _ o in "st- tj o q C L:— 0.58

Ks-7b

Contextual Info: TMS417800, TMS417800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 7 8 0 -D E C E M B E R 1992 x 8 DE P AC K A G E t DZ P A C K AG E t TOP VIEW (TOP VIEW) * Performance Ranges: vcc[ 1o D Q 0[ 2 ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE

UM61L3232AF-7

Abstract: UM61L3232A um61 UM61L UM61L3232 UM61L3232AF-8 UM61-l-3232af
Contextual Info: UM61L3232A Series PRELIMINARY 32K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output Features Fast access times: 5/6/7/8 ns Single +3.3V+10% or +3.3V-5% power supply Synchronous burst function Individual Byte W rite control and Global Write

UNITRODE

Contextual Info: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles

25CL64B-GA

Abstract: 25CL64BGA 25cl64 FM25CL64B-Ga
Contextual Info: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: bq2204A X4 SRAM Nonvolatile Controller Unit General Description Features ä Power monitoring and switching for 3-volt battery-backup applications ä Write-protect control ä 2-input decoder for control of up to 4 banks of SRAM ä 3-volt primary cell inputs

00F1H

Contextual Info: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles

TRW J500

Abstract: k45752 52S marking
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and

m1 250c fuse

Abstract: at32uc3c em 234 stepper dtx 370 DTH block diagram lta 301 VT 546 Modem basic circuit diagram EIC 4021 shift registers 4050
Contextual Info: Features • High Performance, Low Power 32-bit AVR Microcontroller – – – – • • • • • • • • • • • • Compact Single-cycle RISC Instruction Set Including DSP Instruction Set Built-in Floating-Point Processing Unit FPU Read-Modify-Write Instructions and Atomic Bit Manipulation

TIME PROCESSOR UNIT REFERENCE MANUAL

Abstract: MK50DX256CLK10
Contextual Info: Freescale Semiconductor Data Sheet: Advance Information K50 Sub-Family Document Number: K50P81M100SF2V2 Rev. 1, 6/2012 K50P81M100SF2V2 Supports the following: MK50DX256CLK10 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number: K51P100M72SF1 Rev. 2, 4/2012 K51P100M72SF1 K51 Sub-Family Supports: MK51DX256CLL7, MK51DX256CML7 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V

ATMLH

Abstract: AT34C02D-SSHM-T AT34C02D-CUM-T 34c02
Contextual Info: Atmel AT34C02D I2C-compatible 2-wire Serial EEPROM with Permanent and Reversible Software Write Protection 2K (256 x 8) DATASHEET Features  Permanent and reversible software write protection for the first-half of the array  Software procedure to verify write protect status

adwill

Abstract: D176 Atmel part numbering ata5577 coil gold detector circuit diagram atmel rfid reader lf D-176 125KHz LF coil antenna for Automotive 125khz rfid reader analog lot id
Contextual Info: Atmel ATA5575M1 Read/Write LF RFID IDIC 100kHz to 150kHz DATASHEET Features ● Contactless power supply ● Contactless read/write data transmission ● Radio frequency fRF from 100kHz to 150kHz ● 128-bit EEPROM user memory: 16Bytes 8Bits each ● 8-bit configuration memory

Contextual Info: Freescale Semiconductor Data Sheet: Advance Information K30 Sub-Family Document Number: K30P81M100SF2V2 Rev. 1, 6/2012 K30P81M100SF2V2 Supports the following: MK30DN512VLK10 Features • Operating Characteristics – Voltage range: 1.71 to 3.6 V – Flash write voltage range: 1.71 to 3.6 V

Contextual Info: TLS2111, TLS21R11 THIN-FILM OR MIG 2- OR 4-CHANNEL LOW-NOISE READ/WRITE PREAMPLIFIERS D3879, A U G U S T 1991 DW PACKAGE TOP VIEW Low Equivalent Input Noise Voltage 0.65 nV/Vfiz Max [ HOX [ H0Y[ H1X [ H1Y[ H2X [ H2Y [ H3X [ H3Y [ 1 2 3 4 5 6 7 8 9 V C C 2[ 10