WP 4046 Search Results

CR10

Abstract: M58PR001LE M58PR256LE M58PR512LE a*12864
Contextual Info: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

P46H

Abstract: TFBGA105
Contextual Info: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers

bc 107 common base h parameters

Abstract: M58PR256J M58PR512J CR10
Contextual Info: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

TFBGA105

Abstract: CR10 M58PR001LE M58PR512LE
Contextual Info: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

Contextual Info: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V supply Flash memories Feature summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program

Contextual Info: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

Contextual Info: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memories PRELIMINARY DATA Features summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant)

LM 4138

Abstract: k 3919
Contextual Info: CLD-AP20 REV 6 BINNING & LABELING Cree XLamp MC-E LED ® INTRODUCTION TABLE OF CONTENTS This document describes the product nomenclature Introduction. 2 required to select and order Cree XLamp MC-E LEDs.

CREE MCE

Abstract: cree led mce lm 3844 LM 386-3 3874 Cree optics transistor k 4212 wp 4046 4017
Contextual Info: Cree XLamp® MC-E LED Binning and Labeling Introduction This document describes the product nomenclature required to select and order Cree XLamp MC-E LEDs. XLamp MC-E LEDs are tested and sorted into bins which are then combined into orderable kits identified by an order code.

PC48F4400P0VB0E

Contextual Info: NumonyxTM StrataFlash Embedded Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 unique factory device identifier bits

strataflash 512 p30

Abstract: JS28F128P30B85 pc28f128p30b JS28f256P30 1GB EASY BGA NOR FLASH JS28F256P30B95 TSOP 48 stacked die package JS28F256P PC28F PF48F4400
Contextual Info: Intel StrataFlash Embedded Memory P30 1-Gbit P30 Family Datasheet Product Features High performance • Security — 85 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to• 64 user-programmable OTP bits

JS28F256P30

Abstract: PC48F4400 PC28F256P30BFE RC48F4400P PC28F256P30B JS28F256P30T PC48F4400P0 PC28F256P30 js28f256p RC28F256P30TF
Contextual Info: Numonyx Flash Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 OTP bits, programmed with unique — 110 ns initial access for TSOP

PC28F256P30BF

Abstract: PC48F4400P0VB0E JS28F256P30 RC28F256P30TF Numonyx TE28F256P30BF PC28F256P30 JS28F256P30tf PC48F PF48F
Contextual Info: NumonyxTM StrataFlash Embedded Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 unique factory device identifier bits

PC28F256P30BF

Abstract: PC48F4400P0VB0E PC28F256P30TF JS28F256P30BF RC28F256P30BF RC28F256P30TF PF48F4000P0ZBQE JS28F256P30TF RC48F4400P0VB0E PF48F4400P0VBQE
Contextual Info: Numonyx Flash Memory P30-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ High performance „ Security — 100 ns initial access for Easy BGA — One-Time Programmable Register: • 64 OTP bits, programmed with unique — 110 ns initial access for TSOP

PC28F256P30T85

Abstract: JS28F256P30T95 RC48F4400P0VB00 PC28F640P30T85 JS28F256P30B95 RC28F640P30B85 JS28F256P30 RC28F256P30T85 PC28F640P30B85 306667
Contextual Info: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

JS28F128P33

Abstract: 314749-002US JS28F256P33b95 strataflash 512 p33 3147* intel pc28f128p33b RC28F256P33 2x256MB PF48F4400
Contextual Info: Intel StrataFlash Embedded Memory P33 Datasheet Product Features High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

strataflash 512 p30

Abstract: Migration Guide for Intel StrataFlash Memory J 3066* intel
Contextual Info: Intel StrataFlash Embedded Memory P30 Family Datasheet Product Features High performance • Security — 85 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to• 64 user-programmable OTP bits

intel MLC flash

Abstract: JS28F256P33B95 JS28F256P33 JS28F256P33T95 JS28F128P pc28f256p33t85 PC48F4400P0TB00 PF48F2000P0XBQ0 strataflash reliability RC28F256P33T85
Contextual Info: Intel StrataFlash Embedded Memory P33 Datasheet Product Features High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

JS28F256P33

Abstract: PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85
Contextual Info: Numonyx StrataFlash Embedded Memory P33 Datasheet Product Features „ „ „ „ High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst

JS28F256P30

Abstract: PC28F256P30T85 js28f128p30 RC28F640P30B85 RC48F4400P0VB00 JS28F256P30B95 JS28F256P30T95 JS28F128P30T PC28F128P30B85 JS28F128P30B85
Contextual Info: Intel StrataFlash Embedded Memory P30 Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

JS28F256P30

Abstract: JS28F256P30T95 JS28F256P30B95 PC28F256P30T85 JS28F256P30T js48f4400p0vb00 RC48F4400P0VB00 JS28F128P30T85 PC28F256P30B85 PC28F640P30T85
Contextual Info: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

JS28F256P30T95

Abstract: JS28F256P30B95 PC28F256P30T85 306667 RC48F4400P0VB00 JS28F256P30 JS28F128P30B85 js48f4400p0vb00 PC28F128P30T85 PC28F640P30T85
Contextual Info: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

PC28F128P30BF65

Abstract: PC28F128P30BF PC28F640P30TF PC28F640P30TF65 js28f128p30tf75 JS28F640P30BF js28f640 js28f128p30tf PC28F640 JS28F128P30
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features „ High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode

ANSI C78.377

Abstract: CREE MCE RGBW LM 3751 Lm 4046 cree lm
Contextual Info: CLD-AP20 Rev 7A binning & labeling Cree XLamp MC-E LED ® MC-E White MC-E Color Introduction MC-E Dynamic White table of contents This document describes the product nomenclature Introduction. 1 required to select and order Cree XLamp MC-E LEDs.