WNS MARKING Search Results

Contextual Info: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-| = 10ki , R2 = 47k£2) Ordering Code Pin Configuration WNs Q62702-C2280 1 =B Package 2=E o Marking BCR 185W II

Contextual Info: SIEMENS BCR 185 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=10ki!, R2=47kii Type Marking Ordering Code Pin Configuration BCR 185 WNs Q62702-C2263 1=B Package 2=E 3=C SOT-23

Contextual Info: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W

VSO05561

Contextual Info: BCR 185W PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R 1=10kΩ, R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR 185W WNs Pin Configuration 1=B 2=E Package

transistor 7g

Abstract: Q62702-C2263
Contextual Info: SIEMENS BCR 185 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor Ri=10k£î, R2=47kiî Type Marking Ordering Code BCR 185 WNs Pin Configuration Q62702-C2263 1=B Package 2=E 3=C SOT-23

Q62702-C2280

Contextual Info: BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10kΩ, R2 = 47kΩ Type Marking Ordering Code Pin Configuration BCR 185W WNs 1=B Q62702-C2280 Package 2=E 3=C SOT-323

wns marking

Abstract: BCR185W VSO05561
Contextual Info: BCR185W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R 1=10k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR185W WNs Pin Configuration 1=B 2=E Package 3=C SOT323

C2263

Abstract: Q62702-C2263
Contextual Info: BCR 185 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 185 WNs 1=B Q62702-C2263 Package 2=E 3=C SOT-23 Maximum Ratings

BCR185W

Abstract: VSO05561
Contextual Info: BCR185W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R 1=10k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR185W WNs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR185

Contextual Info: BCR185 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR185 WNs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR185

Abstract: DSA0011196 wns marking
Contextual Info: BCR185 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR185 WNs Pin Configuration 1=B 2=E Package 3=C SOT23

Contextual Info: BCR 185 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k, R 2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 185 WNs Pin Configuration 1=B 2=E Package 3=C SOT-23

386SL

Abstract: E0000 LH28F008SA LH28F008SAR-85 LHF08S50
Contextual Info: PwmTSiiaiK'-wNs inlciir.itoU Circuits inwp LH28F008SAR-85 8M Flash Memory 1M (x8 (Model No.: LHF08S50) Spec No. EL105019 Issue Date: August 31,1998 SHARP LHF08S50 #H andle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, o f this material is prohibited

BCR185U

Abstract: BCR185 BCR185F BCR185L3 BCR185S BCR185T
Contextual Info: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10kΩ , R2 = 47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

Contextual Info: BCR185./SEMB9 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10kΩ , R2 = 47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching

DIN 6784

Abstract: E6327 infineon marking code E1 sot23 marking code 10 sot23 BCR185 BCR185F BCR185L3 BCR185S BCR185T BCR185U
Contextual Info: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 47 kΩ • BCR185S / U: Two internally isolated transistors with good matching in one multichip package

BCR108W

Abstract: BCR185 BCR185F BCR185S BCR185W BCW66 infineon marking code B2 SOT23
Contextual Info: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 47 kΩ • BCR185S: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 47 kΩ • BCR185S / U: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 47 kΩ • BCR185S: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 47 kΩ • BCR185S: Two internally isolated transistors with good matching in one multichip package

marking code 718 sot363

Contextual Info: SIEMENS BCR 185S PNP Silicon Digital Transistor Array >Switching Circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in biase resistor (R ^IO kß, R2=47kfl) Type BCR 185S Marking Ordering Code Pin Configuration

BCR185

Contextual Info: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 47 kΩ • BCR185S: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR 185S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in biase resistor (R1=10kΩ, R2=47kΩ) Type Marking Ordering Code Pin Configuration

CCD GFT

Abstract: ERD31 SS53 40114 JD51
Contextual Info: ERD31 i.5A t> £ : Outline Drawings FAST RECOVERY DIODE : Features : Marking Large current H igh voltage by mesa design 'M is ttte •h ' j — Y - j - 0 High reliability 031-04 , (-«HtflE* i ±W : f t ] ■T«J lOfl-Q. Hfl-«. I2A- : Applications ■■Œî'9^