WE VQE 23 F Search Results

WE VQE 23 F

Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
Contextual Info: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,

Contextual Info: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,

Contextual Info: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

Contextual Info: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high

BUK856-400IZ

Abstract: DD30 T0220AB ignition coil IGBT CL-8A
Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3T31 0030^05 S3T H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA

SBAA094

Abstract: sinc3 vhdl code iir filter in vhdl pulse shaping FILTER implementation xilinx xilinx code fir filter in vhdl VHDL for decimation filter digital filter sinc filter xilinx FPGA IIR Filter it is possible to summarize the results for a Sinc3 filter and sinc3
Contextual Info: Application Report SBAA094 – June 2003 Combining the ADS1202 with an FPGA Digital Filter for Current Measurement in Motor Control Applications Miroslav Oljaca, Tom Hendrick Data Acquisition Products ABSTRACT The ADS1202 is a precision, 80dB dynamic range, delta-sigma ∆Σ modulator operating

4327

Abstract: LC36256ALL LC36256ALL-10 LC36256ALL-12 LC36256ALL-70 LC36256ALL-85 LC36256AMLL-10 LC36256AMLL-12 LC36256AMLL-70 LC36256AMLL-85
Contextual Info: [Ordering number : EN4327 Asynchronous Silicon Gate CMOS LSI LC36256ALL, AMLL-70/85/10/12 No. 4327 S A \Y O 256 K 32768 words x 8 bits SRAM Overview Package Dimensions The LC36256ALL, AM LL-70/85/10/12 are fully asynchronous silicon gate CMOS static RAMs with an

MG25N2YS1

Abstract: WE VQE 23 F
Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG25N2YS1 HI GH POWER S WI T C H I N G AP PL IC ATIONS. H OT O R CONT R OL A P P L I CA TI ON S . FEATURES: . High I n p u t Im p eda nc e . High Speed . . . . : t f = 1 . Oys Ma x. t r r = 0. 5jLis(Max.) Low S a t u r a t i o n V o l t a g e : Vq e ( s a t ) = 5 • o v (‘M ax•)

Contextual Info: 4K Military X2804AM 512x8 Bit _ Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

KA-40W

Abstract: LM391 equivalent LM391N 90 SMT TRANSISTOR 5D IC LM391 LM391N equivalent MJE171 NATIONAL SEMICONDUCTOR DIODE h4b LM391N-100 LM391N
Contextual Info: & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs. High power supply voltage operation and true high fidelity

transistor RJH 30

Abstract: LM391N 90 LM391 equivalent LM391N equivalent 12 volts 50 watt stereo amplifier schematic diagram LM391N-100 LM391 LM391N MJE171 NATIONAL SEMICONDUCTOR 240SA
Contextual Info: N a tio n a l LM391 & Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs. High power supply voltage operation and true high fidelity

LC35256A

Abstract: LC35256AM LC35256AS 5K4916
Contextual Info: Ordering number : EN%S4916 CMOS LSI LC35256A, AS, AM-70/85/10 No. 5K4916 S A \Y O 256K 32768 words x 8 bits SRAM with OE and CE Control Pins Preliminary Overview The LC35256A, AS, and AM are 32768 words x 8-biis asynchronous silicon gate CMOS SRAMs. These products

FAIRCHILD 3904

Contextual Info: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ MM74C912 6-Digit BCD Display Controller/Driver General Description T h e M M 74C 912 display controllers are interface elem ents, w ith m emory, th a t drive a 6-digit, 8-segm ent LED display. The display controllers receive data inform ation through 5

Contextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level Insulated gate bipolar power

1.8 degree bipolar stepper motor

Contextual Info: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C racy, the IXMS150 will allow a designer to implement a control system with a resolution in excess of 250 microsteps per step, or 50,000 steps per revolution

RCD snubber

Abstract: calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit
Contextual Info: Switching Voltage Transient Protection Schemes For High Current IGBT Modules Rahul Chokhawaia, Saed Sobhani International Rectifier Corporation Applications Engineering 233 Kansas St., El Segundo, CA 90245 A bstract: The emergence o f high current an d fa ster

information applikation

Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
Contextual Info: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK

decoding technique nrz DIAGRAM

Abstract: mfm decoder function DP8460N4 DP8460N-4 circuit diagram of three phase automatic changeover switch mfm decoder AFL SMD MARK CODE dr-55 disk drive read write amplifier 518220
Contextual Info: NATL S E H I C O N D -CUP/UO "âb M | t , s o i i a û d O b i a m 5 DP8460 Data Separator/DP8450 Data Synchronizer General Description The DP8460 Data Separator is designed for application in disk drive memory systems, and depending on system re­ quirements, may be located either in the drive or in the con­

VEB mikroelektronik

Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden

circuit diagram of card lock system using ic 74ls

Abstract: DP8460 DP645 248KS
Contextual Info: DP8460/DP8450 National Semiconductor DP8460 Data Separator/DP8450 Data Synchronizer General Description frequency. After lock-on, with soft sectored disks, the MISS­ ING CLOCK DETECTED output indicates when a missing clock in an address mark field occurs so the controller can

Contextual Info: H- Il GENNUM ' corporati Om LA200 Series LA250 mODM6 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction

smd transistor A11b

Abstract: smd diode code 1B2 transistor book transistor ic equivalent book
Contextual Info: GaAs Components Infineon •aîfinülogies Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips.

Contextual Info: inter«! H IP 6 0 1 8 B D a ta s h e e t The HIP6018B provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM controllers, a linear regulator and a linear controller as well