WE VQE 23 F Search Results
WE VQE 23 F Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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SSM3J356R |
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P-ch MOSFET, -60 V, -2 A, 0.3 Ω@-10 V, SOT-23F | Datasheet | ||
SSM3J332R |
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P-ch MOSFET, -30 V, -6 A, 0.042 Ω@-10 V, SOT-23F | Datasheet | ||
SSM3J351R |
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P-ch MOSFET, -60 V, -3.5 A, 0.134 Ω@-10 V, SOT-23F, AEC-Q101 | Datasheet | ||
SSM3K361R |
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MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 | Datasheet | ||
SSM3K341R |
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MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 | Datasheet |
WE VQE 23 F Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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WE VQE 23 F
Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
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1RG4BC30K-S generati08 WE VQE 23 F WE VQE 23 E WE VQE 11 E 1RG4BC30K-S | |
Contextual Info: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C, |
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1RG4BC30K-S S54SH | |
Contextual Info: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications: |
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SGP06N60, SGB06N60, SGD06N60, SGU06N60 SGP06N60 O-220AB Q67041-A4709-A2 SGB06N60 O-263AB Q67041-A4709-A4 | |
Contextual Info: PD -91776 International I R Rectifier IRG4PH20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10 js, V Cc = 720V , T j = 125°C, V qe = 15V • Combines low conduction losses with high |
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IRG4PH20K | |
BUK856-400IZ
Abstract: DD30 T0220AB ignition coil IGBT CL-8A
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bbS3T31 BUK856-400IZ T0220AB DD30 ignition coil IGBT CL-8A | |
SBAA094
Abstract: sinc3 vhdl code iir filter in vhdl pulse shaping FILTER implementation xilinx xilinx code fir filter in vhdl VHDL for decimation filter digital filter sinc filter xilinx FPGA IIR Filter it is possible to summarize the results for a Sinc3 filter and sinc3
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SBAA094 ADS1202 15-bit SBAA094 sinc3 vhdl code iir filter in vhdl pulse shaping FILTER implementation xilinx xilinx code fir filter in vhdl VHDL for decimation filter digital filter sinc filter xilinx FPGA IIR Filter it is possible to summarize the results for a Sinc3 filter and sinc3 | |
4327
Abstract: LC36256ALL LC36256ALL-10 LC36256ALL-12 LC36256ALL-70 LC36256ALL-85 LC36256AMLL-10 LC36256AMLL-12 LC36256AMLL-70 LC36256AMLL-85
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EN4327 LC36256ALL, AMLL-70/85/10/12 AMLL-70/85/10/12 LC36256ALL/AMLL 4327 LC36256ALL LC36256ALL-10 LC36256ALL-12 LC36256ALL-70 LC36256ALL-85 LC36256AMLL-10 LC36256AMLL-12 LC36256AMLL-70 LC36256AMLL-85 | |
MG25N2YS1
Abstract: WE VQE 23 F
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MG25N2YS1 MG25N2YS1 WE VQE 23 F | |
Contextual Info: 4K Military X2804AM 512x8 Bit _ Electrically Erasable PROM FEATURES • Simple Byte Write Operation —No High Voltages Necessary —Single TTL Level WE Signal Modifies Data —Internally Latched Address and Data |
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X2804AM 512x8 X2804A MilStd-B83C | |
UEI 20 SP 010
Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
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64-KBit-Sehreib--Iese-Speicher 086/11/B9 UEI 20 SP 010 Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D | |
KA-40W
Abstract: LM391 equivalent LM391N 90 SMT TRANSISTOR 5D IC LM391 LM391N equivalent MJE171 NATIONAL SEMICONDUCTOR DIODE h4b LM391N-100 LM391N
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LM391 0W-81Ì 0W-41Ì TL/H/7146-13 LM391N; b501124 KA-40W LM391 equivalent LM391N 90 SMT TRANSISTOR 5D IC LM391 LM391N equivalent MJE171 NATIONAL SEMICONDUCTOR DIODE h4b LM391N-100 LM391N | |
transistor RJH 30
Abstract: LM391N 90 LM391 equivalent LM391N equivalent 12 volts 50 watt stereo amplifier schematic diagram LM391N-100 LM391 LM391N MJE171 NATIONAL SEMICONDUCTOR 240SA
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LM391 LM391N; TL/H/7146-13 b50ii24 transistor RJH 30 LM391N 90 LM391 equivalent LM391N equivalent 12 volts 50 watt stereo amplifier schematic diagram LM391N-100 LM391N MJE171 NATIONAL SEMICONDUCTOR 240SA | |
LC35256A
Abstract: LC35256AM LC35256AS 5K4916
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S4916 5K4916 LC35256A, AM-70/85/10 LC35256A 0D1535E LC35256AM LC35256AS 5K4916 | |
FAIRCHILD 3904Contextual Info: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ MM74C912 6-Digit BCD Display Controller/Driver General Description T h e M M 74C 912 display controllers are interface elem ents, w ith m emory, th a t drive a 6-digit, 8-segm ent LED display. The display controllers receive data inform ation through 5 |
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MM74C912 FAIRCHILD 3904 | |
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Contextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level Insulated gate bipolar power |
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BUK856-400 | |
1.8 degree bipolar stepper motorContextual Info: High Performance Dual PWM Microstepping Controller Type Package Temperature Range IXMS150 PSI 24-Pin Skinny DIP -40°C to +85°C racy, the IXMS150 will allow a designer to implement a control system with a resolution in excess of 250 microsteps per step, or 50,000 steps per revolution |
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IXMS150 24-Pin 4bfib22b 1.8 degree bipolar stepper motor | |
RCD snubber
Abstract: calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit
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AN-983. AN-984, RCD snubber calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit | |
information applikation
Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
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decoding technique nrz DIAGRAM
Abstract: mfm decoder function DP8460N4 DP8460N-4 circuit diagram of three phase automatic changeover switch mfm decoder AFL SMD MARK CODE dr-55 disk drive read write amplifier 518220
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DP8460 Separator/DP8450 DP6464 ST506 b5D112fl 0Gbl037 decoding technique nrz DIAGRAM mfm decoder function DP8460N4 DP8460N-4 circuit diagram of three phase automatic changeover switch mfm decoder AFL SMD MARK CODE dr-55 disk drive read write amplifier 518220 | |
VEB mikroelektronik
Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
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circuit diagram of card lock system using ic 74ls
Abstract: DP8460 DP645 248KS
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DP8460/DP8450 DP8460 Separator/DP8450 DP8464 ST506 DP8460" circuit diagram of card lock system using ic 74ls DP645 248KS | |
Contextual Info: H- Il GENNUM ' corporati Om LA200 Series LA250 mODM6 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction |
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LA201 LA202 | |
smd transistor A11b
Abstract: smd diode code 1B2 transistor book transistor ic equivalent book
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Contextual Info: inter«! H IP 6 0 1 8 B D a ta s h e e t The HIP6018B provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM controllers, a linear regulator and a linear controller as well |
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HIP6018B 12Vqc- AN9805. |