WB TRANSISTOR Search Results

BUK438-500B

Contextual Info: PHILIPS INT ER NA TI O N AL b5 E D WB 711 Dfl2 b Db3 T3 1 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

B205A

Abstract: 2n5152 2N5151 2N5154
Contextual Info: Datasheet central Vi ^ W l • — ■ 2N5151 2N5152 2N5153 2N5154 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS W *m Spwiirnwili iftfli1corn. 9^9■■ llvWI IUVvbwl WB pva 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824

Contextual Info: TEA6848HL New in car entertainment car radio tuner IC with precision adjacent channel suppression NICE-PACS Rev. 04 — 29 January 2010 Product data sheet 1. General description The TEA6848HL is a single IC with car radio tuner for AM, FM and Weather Band (WB)

S5158

Contextual Info: CS5158 <WB- CS5158 CPU 5-Bit Synchronous Buck Controller D escrip tion The CS5158 is a 5-Bit synchronous dual N-Channel buck controller. It is designed to provide unprece­ dented transient response for today's dem anding high-density, high-speed logic. The regulator

nxp car fm tuner

Abstract: AUTO SEARCH TUNING FM RADIO RECEIVER am sw fm radio printed circuit board smd cf5 old fm radio diagram car radio tuner car wiring diagram SFE 10,7 MS3 jfet cascode TEA6848HL
Contextual Info: TEA6848HL New in car entertainment car radio tuner IC with precision adjacent channel suppression NICE-PACS Rev. 04 — 29 January 2010 Product data sheet 1. General description The TEA6848HL is a single IC with car radio tuner for AM, FM and Weather Band (WB)

BFQ10

Contextual Info: PHILIPS INTERNATIONAL MIE J> WB 711002b 002b51S S Ö P H I N BFQ10 to 16 T -2 7 -2 7 — DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, with electrically insulated gates and a common substrate connected to the envelope; intended

TEA7605SP

Abstract: TEA7105 TEA5170 display driver dip16 M5450B7 TEA2164 BATWING dual npn 500ma M5480 EF9369
Contextual Info: r iZ SGS-THOMSON CONSUMER WB g ®[lILIËή®R!lD(gi TV, MONITORS AND VCR CIRCUITS SWITCH MODE POWER SUPPLY BIPOLAR TRANSISTORS •c VCEV v CEO ptot Package Type N PN hFE @ >C 1 (A (V) (V) <W) 5 6 7 7.5 7.5 12 1500 1200 1500 1500 1500 1200 700 600 700 700

cmy17

Abstract: GFH600III GFH600-III CNY51 GFH600II CNX35 CNX36 CNY17II CNY32 CNY47
Contextual Info: _ THOMSON/ D I S T R I B UTOR SñE D • Wbñ73 0005747 flOS ■ TCSK Optoelectronic Products Optoisolators/Optocouplers Features Optoelectronic components sense the presence and intensity of light, the position of objects which break or reflect a light beam, and transmit electronic signals without

MC13280AY

Abstract: MC13281A
Contextual Info: Order this document by MCI 3280AY/D MOTOROLA MC13280AY MC13281A/B Advance Information 80/100 MHz Video I Processor 80/1 00 MHz VIDEO I t, The MCI 3280AY and MCI 3281 WB are three channel wideband amplifiers designed for use as a video pre–amplifier in high resolution RGB color

MEB-12C-5

Abstract: MEB-12-12 MEB-12B-12
Contextual Info: SOUND GENERATORS u&n CIT/SOUND 2. » « a » # F * 3 * s n r u 3 :- r o I ^ • Features Won ft Wb t i ^ 1. Ultra compact, ultra thin and lightw eight construction 2. Oscillating circuit is built in. 3. Non-mechanical contacts afford dependability "?o and long life.

L3257C

Abstract: TOSHIBA el suffix usb221 WCSP8 cst88 MBL3245C 3067 dual transistor 5252 F mosfet L384C mb 428
Contextual Info: 2008-9 PRODUCT GUIDE CMOS Bus Switch ICs TC7MB/WB/SB Series s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Characterized by ultra-high-speed switching and low power dissipation, Toshiba’s bus switches are suitable for high-speed bus systems.

433MHz VCO

Abstract: 1 Mhz fm demodulator 10nF capacitor frequency and bandwidth of fm narrow band and ssb in usa
Contextual Info: I R F B MICRODEVICES PmUmlnary •M B WB BHM RF2917 u§£l H H 4 3 3 /8 6 8 /9 1 5 M H Z FM/FSK RECEIVER Typ ical A pplications • Wireless Meter Reading • Remote Data Transfers • Keyless Entry Systems • Wireless Security Systems • 433/868/915 MHz ISM Band Systems

2SD1292

Contextual Info: ROHM CO L T D ' - MQE D 7 f i 2 f l W O Q O S Ô 4 L 2 • RHM h 7 > y 7 s $ / T ransistors 2SD1292 7 -27-lJ 2SD1292 I fcf £ # v 7 fr y * ^ NPN v y =3 > h 7 > v X £ ^ Ib ^ iilS f f l/M e d iu r n Power Amp, Epitaxial Planar NPN Silicon Transistor • *WB>f&IS/'Dftn6f»sions Unit: mm

circuit integrator sem 3040

Abstract: photovoltaic cell ana 650 ac drive circuit diagram ad7730 pcb circuit example lucas schaevitz pressure transducer SCHEMATIC ad7730 LOAD CELL ADC bourdon Y 913 cd 1619 CP fm radio intel 945 MOTHERBOARD SERVICE MANUAL
Contextual Info: PRACTICAL DESIGN TECHNIQUES FOR SENSOR SIGNAL CONDITIONING +3.0V TO +5.25V Cx j v p 1 p V p D r 5 I f X FILT SELF TEST — O — • ADXL202 X SENSOR WBÊBÊÊÊÊk ■ S H H H k — ^2kil — W v — <»— DUTY CYCLE M ODULATOR ADXL202 O SCILLATO R ■ r*N

Contextual Info: M O T O R O L A SC Í X S T R S / R F> 6367254 Wb MOTOROLA SC D ^ | b 3 b 7 2 S 4 GGflnbM 96D 8 1 9 6 4 <XSTR£/R F r M A X I M U M R A T IN G S S ym bol Value U n it C o lle ctor-E m itter Voltage v CEO 15 Vdc C ollector-Base Voltage VcBO 25 Vdc S ym bol

on 4508

Abstract: on 4508 TRANSISTOR Hcf 4508 LA 4508 transistor 4508 LATCH 4508 4508 4508B
Contextual Info: COS/MOS INTEGRATED CIRCUIT 4.5 0 ? ft V hcé/hcf <wb D U A L 4 -B IT LATCH • • • • • • • • • TWO IN D IP E N D E N T 4 -B IT LATCHES IN D IV ID U A L M ASTER RESET FOR EACH 4 -B IT -L A T C H 3 -S T A T E OUTPUTS W ITH H IG H -I WIPE DANCE STATE FOR BUS LIN E A P P LIC A T IO N

on 4508

Abstract: on 4508 TRANSISTOR LA 4508 4508BE 4508B transistor 4508 HCF4508BE
Contextual Info: COS/MOS INTEGRATED CIRCUIT 4.5 0 ? ft V hcé/hcf <wb D U A L 4 -B IT LATCH • • • • • • • • • TWO IN D IP E N D E N T 4 -B IT LATCHES IN D IV ID U A L M ASTER RESET FOR EACH 4 -B IT -L A T C H 3 -S T A T E OUTPUTS W ITH H IG H -I WIPE DANCE STATE FOR BUS LIN E A P P LIC A T IO N

SE4021

Abstract: BC207B 2N4248 2N4249 BC207 pnp BC521 BC207 BC526 BC204 EN3962
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING V q eq (Cont’d) DEVIC EN O . Pola rity PNP Item NPN VCEO V Min 1 PN4250 40 a 2N4248 40 3 hFE hFE @ >c mA Mln/Max 250/700 50/- @ ic mA NF dB Max @f kHz NF dB Max

2n5133 bc209

Abstract: 2N5133 BC208C BC209 BC528 noise BC209B BC209C 2N4033 N82C55A2 BC538-16
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VqeO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) NPN PNP 1 MPSA06 2 BC538-10 BC528-10 3 MPSA56 @ 'c VCE(aat) V @ lC Max mA mA M in/M ax C0 b

SE4020

Abstract: fairchild to-106 EN2484 BC532 BCS20B high voltage npn to-92 BC530 BC520 2N3962 2N3965
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 4 ^FE VCEO V Min f»FE @ ic mA 180/- mA Min/Max 0.10

SE4010

Abstract: SE4002 2N3565 fairchild to-106 SE4023 BC154 2N3565 to-106 2N5138 bc153 BC318A
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING V C eq (Cont’d) Item DEVIC E NO. Pola rity NPN PNP 1 BC522E 2 BC113 v CEO V Min 20 hFE @ ic mA hFE Min/Max — @ ic mA NF dB Max @f kHz NF dB Max @f kHz 2.0 3.0

SE4020

Abstract: fairchild to-106 se7055 BFX37 BFY57 BC532 2N2484 PN4889 2N3965 EN2484
Contextual Info: FAIRCHILD TRANSISTORS S M A L L S IG N A L LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 ^FE @ ic VCEO V Min Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 f»FE mA 180/- mA Min/Max

Contextual Info: pss Phys. Status Solidi RRL 4, No. 11, 335– 337 2010 / DOI 10.1002/pssr.201004340 Investigation of electron delay www.pss-rapid.com in the base on noise performance in InGaP heterojunction bipolar transistors A. Shimukovitch*, 1, P. Sakalas*, 1, 2, P. Zampardi3, M. Schroter2, 4, and A. Matulionis1

Contextual Info: Process Introduction 2um / 36V Bipolar Process Technology Process features Key Design Rules        Up-down isolation Deep N+ collector plug N-channel stop NPN transistor Lateral PNP transistor Implant resistor optional MOS capacitor