WAFER INTERNATIONAL RECTIFIER Search Results

2 SK 0243

Contextual Info: PD-91799A International IQR Rectifier IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 6" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) (on) C ollector-to-Em itter Saturation Voltage 4.5V Max.

Contextual Info: PD-9.1419 International IQ R Rectifier IRGCH70KE TARGET IRGCH70KE IGBT Die in Wafer Form 1200 V Size 7 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE(on) Param eter Collector-to-Emitter Saturation Voltage

Contextual Info: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.

Contextual Info: International I Q R Rectifier PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form ' 600 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage 3.0V Max.

Contextual Info: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter

Contextual Info: International IOR Rectifier PD-9.1427 IRGCC40KE TARGET IRGCC40KE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5 " Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage

Contextual Info: International IQ R Rectifier PD-9,1422 IRGCH40KE TARGET IRGCH40KE IGBT Die in Wafer Form 1200 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.8V Max.

irgpc50m

Contextual Info: PD-9.1423 International IQ R Rectifier IRGCC50ME TARGET IRGCC50ME IGBT Die in Wafer Form 600 V Size 5 Fast Speed 5” Wafer Electrical Characteristics Wafer Form Param eter VCE (on) Description Guaranteed (Min/Max) Coliector-to-Emitter Saturation Voltage

Contextual Info: International IQ R Rectifier pd-9M 25 IRGCC50FE TARGET IRGCC50FE IGBT Die in Wafer Form 600 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Param eter Collector-to-Emitter Saturation Voltage

Contextual Info: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.

MT29VZZZAD8DQKSM-053 W ES.9D8

Contextual Info: International ICR Rectifier pm.-mìi IRGCH30SE TARGET IRGCH30SE IGBT Die in Wafer Form 1200 V Size 3 Standard Speed 5” Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) V c e (on) Collector-to-Emitter Saturation Voltage 3.3V Max.

Contextual Info: International IO R Rectifier PD'2'501 H F 10A 060A C B TARGET HF10A060ACB Hexfred Die in Wafer Form 600 V Size 10 4" Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) Test Conditions Forward Voltage 1.8V Max. bvr

Contextual Info: International l$2R Rectifier TARGET PD'2497 H F 40C 120A C B HF40C120ACB Hexfred Die in Wafer Form 1200 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter V fm BVr ! rm Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current

Contextual Info: International is s r Rectifier pd-9.«3i IRGCC20UE TARGET IRGCC20UE IGBT Die in Wafer Form 600 V Size 2 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (M in/M ax) V ce (on) Parameter Collector-to-Emitter Saturation Voltage

Contextual Info: International IQR Rectifier PD‘2500 H F30A 060A C B TARGET HF30A060ACB Hexfred Die in Wafer Form 600 V Size 30 4" Wafer Electrical Characteristics Wafer Form Param eter V fm BV r I RM Description Guaranteed (Min/Max) Forward Voltage Test Conditions 1.8V Max.

wafer level package

Abstract: SN63 PB37 PROFILES with or without underfill IRF6100 desoldering
Contextual Info: AN-1011 Wafer Level Package Technology Board Mounting Application Note for 0.800mm pitch devices page Device construction 2 Design considerations 3 Assembly considerations 4 International Rectifier AN-1011 Wafer Level Package Technology Board Mounting Application Note

Contextual Info: International I Q R Rectifi G f _ TARGET PD'2-499 H F 30C 120A C B HF30C120ACB Hexfred Die in Wafer Form 1200 V Size 30 4" Wafer Electrical Characteristics Wafer Form Param eter Description Guaranteed (Min/Max) Test Conditions V fm Forward Voltage

SC200H100S5B

Abstract: 60HQ090 international rectifier
Contextual Info: International Rectifier Catalog Search Part Search Site Search Part: SC200H100S5B Description: 100V Size 200x200 Gen 1 SCHOTTKY DIE ON WAFER United States Support Docs: Datasheet Product ID SC200H100S5B Description 100V Size 200 x 200 Gen 1 SCHOTTKY Die On Wafer

Contextual Info: International TOR Rectifier PM-'4!1 IRGCH50ME TARGET IRGCH50ME IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M ax) V c e (on) Collector-to-Em itter Saturation Voltage

Contextual Info: PD-9.1426 International IO R Rectifier IRGCC40UE IRGCC40UE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) C ollector-to-Em itter Saturation Voltage

Contextual Info: International IQ R Rectifier PD-9.1442 IRGCH40SE TARGET IRGCH40SE IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE(on) C ollector-to-Em itter Saturation V oltage

doctor-blade

Abstract: 150um
Contextual Info: Application Note AN-1011 Assembly of FlipFET Devices by Hazel Schofield and Martin Standing, International Rectifier FlipFET™ is a new generation of HEXFET Power MOSFET package from International Rectifier. FlipFET™ combines the latest die design and wafer

Contextual Info: International IQ R Rectifier PD-9.1440 IRGCH20SE TARGET IRGCH20SE IGBT Die in Wafer Form 1200 V Size 2 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE (on) Collector-to-Em itter Saturation Voltage

Contextual Info: International I Q R Rectifier PD'2-498 H F 40A 060A C B TARGET HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n V fm BVr Forward V oltage I RM G u a ra n te e d (M in /M a x )