W30N Search Results

L3-W30N-BS

Abstract: CH-4009 Sloan
Contextual Info: Series L3 / Ø 3mm, T-1 SLOAN AG Birmannsgasse 8 CH-4009 Basel Tel. +41 61 264 10 60 Fax. +41 61 264 10 75 info@sloan-basel.com Colour: white Sloan Part No.: L3-W30N-BS Electrical and Optical Characteristics TA = 25 C Lens Chip Emitted Colour ∆λ Chromaticity

ZVS phase-shift converters

Abstract: STW30NM60D W30NM60 W30NM60D
Contextual Info: W30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh Power MOSFET ADVANCED DATA TYPE W30NM60D VDSS RDS on Rds(on)*Qg 600 V < 0.135 Ω 9.12 Ω*nC ID 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

B21G

Abstract: R50U W30N G31n B51G
Contextual Info: Specifications LED‘s ATTENTION Observe Precautions for Handling Electrostatic Sensitive Devices Änderungen die dem technischen Fortschritt dienen, sind vorbehalten Réserve de modifications de toutes les données techniques 5mm LED‘s Electro-Optical-Characteristics

W30NM60D

Abstract: ZVS phase-shift converters W30NM60 STW30NM60D Fast Recovery Bridge 25C312
Contextual Info: W30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE W30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600 V < 0.145 Ω 30 A TYPICAL RDS(on) = 0.125 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

CT-1004

Abstract: D4808
Contextual Info: STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, W30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB30NM50N 550 V < 0.115 Ω 27 A STI30NM50N 550 V < 0.115 Ω

STW30NM50N

Abstract: 30NM50N STP30NM50N STB30NM50N STF30NM50N STI30NM50N
Contextual Info: STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, W30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @Tjmax RDS(on) max ID STB30NM50N 550 V < 0.115 Ω 27 A STI30NM50N 550 V < 0.115 Ω

W30NM60

Abstract: ZVS phase-shift converters STW30NM60D W30NM60D mosfet 600V 30A JESD97 25C312
Contextual Info: W30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID W30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge

W30NC60W

Abstract: ST IGBT code marking STGW30NC60W JESD97 Marking STMicroelectronics TO 247
Contextual Info: W30NC60W N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT Target Specification General features • Package Type VCES VCE sat (Max)@ 25°C IC @100°C W30NC60W 600 V < 2.5 V 30 A VERY LOW OFF LOSSES INCLUDING TAIL CURRENT 3 2 1 ■

15j100 capacitor

Abstract: W28NT1000 W48NT600 15j100 RETMA RAILS p022h P012H R36W MARKING CODE WM9 12EB70
Contextual Info: ACOPIAN PROMISES TO SHIP WITHIN THREE DAYS Acopian P.O. Box 638 Easton, PA 18044-0638 . . . and we keep that promise. For more than 40 years, Acopian has been shipping AC to DC power modules within three days after receipt of an order. During this period, the Acopian line has expanded from

IC TL072 CIRCUIT DIAGRAM

Contextual Info: r z 7 SCS-THOMSON Ä T# TL072 TL072A-TL072B LOW NOISE J-FET INPUT DUAL O P-AM Ps • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE . LOW INPUT BIAS AND OFFSET CURRENT ■ LOW NOISE Vn = 18 nV /V Hz typ ■ OUTPUT SHORT-CIRCUIT PROTECTION

IGBT STGW30NC60WD

Abstract: STGW30NC60WD W30NC60WD w30nc60w
Contextual Info: W30NC60WD N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT General features Type VCES VCE sat (Max)@ 25°C IC @100°C W30NC60WD 600V < 2.5V 30A • LOWER CRES / CIES RATIO (NO CROSS CONDUCTION SUSCEPTIBILITY) 3 2 1 ■ HIGH FREQUENCY OPERATION

IGBT STGW30NC60W

Abstract: W30NC60W STGW30NC60W schematic diagram UPS 600 STGP30NC60W W30NC60
Contextual Info: STGP30NC60W W30NC60W N-CHANNEL 30A - 600V - TO-247 - TO-220 Ultra FAST Switching PowerMESH IGBT General features • Type VCES VCE sat (Max)@ 25°C IC @100°C W30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A ■ HIGH FREQUENCY OPERATION ■ VERY SOFT ULTRA FAST RECOVERY ANTI

STW30NM60D

Abstract: W30NM60 ZVS phase-shift converters W30NM60D
Contextual Info: W30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh Power MOSFET ADVANCED DATA TYPE W30NM60D VDSS RDS on Rds(on)*Qg 600 V < 0.135 Ω 9.12 Ω*nC ID 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

STW30N20

Abstract: W30N20
Contextual Info: STP30N20 W30N20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30N20 200V 0.075Ω 30A 125W W30N20 200V 0.075Ω 30A 125W Gate charge minimized 3 3 2 1 1 ■ 100% avalanche tested

Contextual Info: W30NC60WD N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT Target Specification General features Type VCES W30NC60WD 600 V • Package VCE sat (Max)@ 25°C IC @100°C < 2.5 V 30 A VERY LOW OFF LOSSES INCLUDING TAIL CURRENT 3 2 1

STW30NM60D

Abstract: JESD97 ZVS phase-shift converters mosfet 600V 100A ST 15A16s W30NM60 W30NM60D 25C312
Contextual Info: W30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID W30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge

30N65M5

Abstract: stp30n65 STP30N65M5 equivalent to220 stw30n65m5
Contextual Info: STB30N65M5, STF30N65M5, STI30N65M5 STP30N65M5, W30N65M5 N-channel 650 V, 0.125 Ω, 22 A, MDmesh V Power MOSFET D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features Order codes VDSS @ TJMAX RDS on max. 710 V 710 V 710 V 710 V 710 V < 0.139 Ω < 0.139 Ω

STF30N65M5

Abstract: STP30N65M5 STW30N65M5 STI30N65M5 STB30N65M5 30N65M5
Contextual Info: STB30N65M5, STF30N65M5, STI30N65M5 STP30N65M5, W30N65M5 N-channel 650 V, 0.125 Ω, 22 A, MDmesh V Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS @ TJMAX RDS on max 710 V 710 V 710 V 710 V 710 V < 0.139 Ω < 0.139 Ω < 0.139 Ω

STW30NM60D

Abstract: 15a diode W30NM60 ZVS phase-shift converters W30NM60D
Contextual Info: W30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE W30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600V < 0.145Ω 30A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES