W AMPLIFIER 30MHZ Search Results

rfha1003

Contextual Info: RFHA1003 RFHA1003 30 MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Gan hemt transistor RFMD

Abstract: DS111007 tl 4941
Contextual Info: RFHA1003 RFHA1003 30MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

Contextual Info: JAN 7 1993 BURR-BROW N VCA610 W IDEBAND VOLTAGE CONTROLLED AMPLIFIER FEATURES APPLICATIONS • WIDE GAIN CONTROL RANGE: 80dB • ULTRASOUND • • • • • AGC AMPLIFIER • ANALYTICAL INSTRUMENTATION SM ALL PACKAGE: 8-pin SO IC or DIP WIDE BANDWIDTH: 30MHz

Contextual Info: B U R R -B R O W N VCA610 WIDEBAND VOLTAGE CONTROLLED AMPLIFIER FEATURES APPLICATIONS • WIDE GAIN CONTROL RANGE: 80dB • ULTRASOUND • SMALL PACKAGE: 8-pin SOIC or DIP • AGC AMPLIFIER • WIDE BANDWIDTH: 30MHz • LOW VOLTAGE NOISE: 2.2nV/VHz • ANALYTICAL INSTRUMENTATION

Contextual Info: OCT ? 5 1992 UCA 11QH M M W I HARRIS SEMICONDUCTOR # # # Output Clamping, Ultra High-Speed Current Feedback Amplifier September ,9 9 2 Features Description • User Programmable Output Voltage Clamp The HFA1130 is a high speed wideband current feedback amplifier

Contextual Info: Or, Call Customer Service at W B-548-6132 USA Only B U W W -B R O W N (i Wide Bandwidth, Current-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • BROADCAST/HDTV EQUIPMENT BANDWIDTH: 350MHz, 2.8Vp-p HIGH OUTPUT CURRENT: ±70mA

op-amp 743

Abstract: 174ra
Contextual Info: RF2690 Preliminary W-CDMA RECEIVE AGC AND DEMODULATOR Typical Applications • W-CDMA Systems Product Description The RF2690 is an integrated complete IF AGC amplifier and quadrature demodulator designed for the receive section of W-CDMA applications. It is designed to amplify

x-band power amplifier

Contextual Info: TGA8286-EPU 8- TO 10.5-GHz AMPLIFIER AP PR O VAL 5150 Two Stage 5-W HFET Power Amplifier 35% P.A.E. at 2- to 3-dB Gain Compression 16-dB Small Signal Gain Gate and Drain Bias can be Applied From Either the Upper or Lower Edges of the Amplifier Size: 5,384 X 2,997 X 0,1016 mm

OPA2686

Contextual Info: B U R R -B RO W N OPA2686 Dual, Wideband, Low Noise, Voltage Feedback OPERATIONAL AMPLIFIER ííiíS ' FEATURES APPLICATIONS • HIGH GAIN BANDWIDTH: 1.6GHz • LOW NOISE, DIFFERENTIAL AMPLIFIERS • LOW INPUT VOLTAGE NOISE: 1.4nV/VHz • xDSL RECEIVER AMPLIFIER

BUF601

Abstract: BUF600
Contextual Info: B U R R - B R O W N <i [ BUF600 BUF601 ] HIGH-SPEED BUFFER AMPLIFIER APPLICATIONS FEATURES • OPEN-LOOP BUFFER VIDEO BUFFER/LINE DRIVER • HIGH-SLEW RATE: 3600V/|is, 5.0Vp-p INPUT/OUTPUT AMPLIFIER FOR MEASUREMENT EQUIPMENT • BANDWIDTH: 320MHz, 5.0Vp-p

MDL-30-R

Abstract: CLASS AB MOSFET RF amplifier Richardson Electronics BLF245 RF MOSFET CLASS AB
Contextual Info: MDL30-R 30W - RF AMPLIFIER Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET to enhance ruggedness and reliability. • • • • • 87.5 ÷ 108 MHz 28 Volts Input / Output 50 Ω - 50 Ω Pout : 30 W

Contextual Info: Or, Call Customer Service at W B-548-6132 USA Only VCA610 n m r WIDEBAND VOLTAGE CONTROLLED AMPLIFIER FEATURES APPLICATIONS • • • • • • • ULTRASOUND • AGC AMPLIFIER • ANALYTICAL INSTRUMENTATION WIDE GAIN CONTROL RANGE: 80dB SMALL PACKAGE: 8-pin SOIC or DIP

OPA2686

Abstract: KT352
Contextual Info: B U R R -B RO W N OPA2686 Dual, Wideband, Low Noise, Voltage Feedback OPERATIONAL AMPLIFIER a s s e s s - FEATURES APPLICATIONS • HIGH GAIN BANDWIDTH: 1.6GHz • LOW NOISE, DIFFERENTIAL AMPLIFIERS • LOW INPUT VOLTAGE NOISE: 1.4nV/VHz • xDSL RECEIVER AMPLIFIER

high frequency high power transistor 300mhz bjt n

Abstract: RF2318
Contextual Info: RF2318 LINEAR BROADBAND AMPLIFIER Typical Applications • CATV Amplifiers • Return Channel Amplifier • Cable Modems • Base Stations • Broadband Gain Blocks E S 0.196 0.189 W N E 8° MAX 0° MIN ! GaAs HBT SiGe HBT InGaP/HBT GaN HEMT 0.034 0.016 0.009

2N2484

Abstract: NF marking TRANSISTOR transistor NF marking code Transistor 2N2484 CW-60
Contextual Info: 2N2484 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2484 type is an NPN silicon transistor designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C

S07T_2N3117

Abstract: 2n3117
Contextual Info: 2N3117 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3117 type is an NPN silicon transistor designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C

Contextual Info: PN2484 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN2484 type is an NPN silicon transistor designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C

OPA2681

Contextual Info: B U R R -B R O W N OPA2681 Dual Wideband, Current Feedback OPERATIONAL AMPLIFIER With Disable S ita s i? s s - FEATURES APPLICATIONS • WIDEBAND +5V OPERATION: 225MHz G : +2 • UNITY GAIN STABLE: 280MHz (G = 1) • xDSL LINE DRIVER • MATCHED I/O CHANNEL AMPLIFIER

d4242

Abstract: EL2090 EL2090CM EL2090CN H1210
Contextual Info: T T DUC PRO LACEMEN at E T E r P L e t E O OBS ENDED R port Cen /tsc p m u o M S .c M ECO echnical w.intersil T NO RData w r w Sheet August 1995, Rev. A u ct o L or conta -INTERSI 1-888 EL2090 FN7040 100MHz DC-Restored Video Amplifier Features The EL2090 is the first complete DCrestored monolithic video amplifier

Contextual Info: W M GE C PLESSEY jm ADVANCE INFORMATION U IH H IM IIIM B IIIl DS3630 - 11 SL610, SL611 &SL612 RF/IF AMPLIFIER The SL610C, SL611C and SL612C are RF voltage amplifier with AGC facilities. The voltage gain is 10, 20 and 50 times respectively and the upper frequency response

LTC1225

Contextual Info: r r i r n w TECHNOLOGY _ LT1225 Very High Speed Operational Amplifier K R T U IK S D C SC R IP TIO Í1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1225 is a very high speed operational amplifier with excellent DC performance. The LT1225 features reduced

MRF466

Abstract: MRF-466
Contextual Info: MRF466 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI MRF466 is Designed for power amplifier applications from 2.0 to 30MHz. B .112 x 45° A E C FEATURES: Ø.125 NOM. FULL R J .125 B • PG = 15 dB min. at 40 W/30 MHz • IMD3 = -30 dBc max. at 40 W PEP

STM-0028

Abstract: tDa 8221 DIODE marking 7BA TDA6120Q SOT110 DBS13P SS-00259 TDA6120 PEAK tray drawing sot193
Contextual Info: SONY M nu$=t * 1. Type No. / Manufacturer’s Name TDA6120 2. Structure Series / / }& PHILIPS SEMICONDUCTORS ifii MIXED BIP / 3. Use —1 DMOS Function ffliÉ • W M 30MHz / 125Vpp Video Output Amplifier 4. Package / Materials DBS 13P / Plastic 4.1 Dimensions

676.160

Abstract: x-band microwave fet x-band power amplifier
Contextual Info: Product Data Sheet 8 - 10.5 GHz Power Amplifier TGA8286-EPU Key Features and Performance • • • • • • 8 to 10.5 GHz Frequency Range, X-band Two Stage 5-W HFET Power Amplifier 37% P.A.E. at 2 to 3 dB Gain Compression 17 dB Small Signal Gain Bias can be applied from either the