VTP1188 Search Results

Contextual Info: SbE D • IVCT 3D3DbDT DDGlDbT 774 VTP1188. VTP Process Photodiodes T-41-51 E G & G VACTEC PACKAGE D IM EN SIO N S inch mm CASE 12 PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic sub­ strate. A clear molded lens is used to

VTP1188SH

Abstract: VTP11188SH VTP1188
Contextual Info: VTP Process Photodiodes VTP1188SH PACKAGE DIMENSIONS inch mm CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .017 in2 (11 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded

Contextual Info: VTP Process Photodiodes VTP1188SH PACKAGE DIMENSIONS inch mm CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .017 in2 (11 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded

VTP11188S

Abstract: VTP1188S
Contextual Info: VTP Process Photodiodes VTP1188S PACKAGE DIMENSIONS inch mm CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .017 in2 (1.1 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded

Contextual Info: VTP1188S VTP Process Photodiodes CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .017 in2 11 mm2 PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded lens is used to increase sensitivity. Low junction

VTP1188S

Abstract: MV330
Contextual Info: VTP Process Photodiodes VTP1188S PACKAGE DIMENSIONS CASE 12 Large area planar silicon photodiode mounted on a tw o lead ceramic substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. A BSO LUTE MAXIMUM RATINGS

Contextual Info: VTP Process Photodiodes VTP1188S PACKAGE DIMENSIONS inch mm CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .017 in2 (11 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded

VTP11188S

Contextual Info: VTP Process Photodiodes VTP1188S PACKAGE DIMENSIONS inch mm CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .017 in2 (1.1 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

VTP8651

Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Contextual Info: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).

VTS3082

Abstract: 476 20k cap VTL5C3 980-2675 VTS3085 VTP1188S 980-0004 photoconductive cells VT935G vactrol
Contextual Info: PerkinElmer Photoconductive Cells, Emitters, Photo Diodes/Transistors, Optoisolators Photoconductive Cells Silicon Photodiodes Electrical/Optical Characteristics @ 25¡C Photoconductive cells provide a very economical and technically superior solution for many light level

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

A 69157 scr

Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
Contextual Info: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)