VR 11 Search Results

VR-61

Abstract: VR-61B VR-61S VR-61U VR-62B VR-63B
Contextual Info: - 278- ft B & PSH W VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 a m * 'J i? y fT ^T C i f y >r '•/ >>r y * y ^ > * ' ) is > %jM7C :k £ fe VRRM Vr I sm I f . I fm* (mHO (V) (V) (A) (mA) 300 150 150 7. 5 150 150 150 300 150 150 150

506b

Abstract: VR-61 VR-61B VR-61S VR-61U VR-62B VR-63B
Contextual Info: 278- - B VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 & f t :k £ fe J 15 |S] f $ t t Vf » S B E ®]S Ik W Vc * 4 = BV r • f ® fti ffl # I Rmax * f l = V f (V PSH P VRRM Vr I sm I f . r f *«= I fm* If («A) (V) I r (A) (V) I r ( h A) </i A) Vr (V)

Contextual Info: 7 INlt likAwJWii \ú UMLim. c COPYRIGHT 19 RELEASED FOR PUBLICATIO N BY AMP INCORPORATED. 4 5 6 3 2 w , 19 TT^T— REVISIONS CM 54 ALL RIGHTS RESERVED. D ES C R IPTIO N P O S T TO IN BOTH Vr/ Vr 1 8 0/3 MEASURED 300 ±„0 1 5 / \ f Vr/ Vr/ Vr/ Vr/ Vr/ PDASTIC

VR-61

Abstract: VR-61B VR-61S VR-61U VR-62B VR-63B
Contextual Info: - 278- ft B VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 & a m * 'J i? y PSH P W (mHO :k £ fe V RRM V r I sm (V ) (A) (V ) 300 7. 5 fT ^ T C i f y >r '• / >>r y 300 * y ^ > * ') is > %jM7C 8 6. 5 I f. I fm * (mA) ]S V f (V ) m in

VR-63B

Abstract: VR-61 VR-61B VR-61S VR-61U VR-62B
Contextual Info: - 278- ft B VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 & a m * 'J i? y PSH P W (mHO :k £ fe V RRM V r I sm (V ) (A) (V ) 300 7. 5 fT ^ T C i f y >r '• / >>r y 300 * y ^ > * ') is > %jM7C 8 6. 5 I f. I fm * (mA) ]S V f (V ) m in

2SD2349

Abstract: 2S0234
Contextual Info: >4 -X u. r Ml V V Z u ?IQi v: Vf IB 4tt EE UJ «nS — D V a- si ~A m 3* XU 4HmS ÄU Ä xn 4ft *S Hpi » P| 1 r \r m Vr H JD H ja V s. V <L ✓o Vr Vr A *3 âS & p¿r -* E3h c? 1 Pi Pi m ffl H m H u at Jit r ^3 Vr \3 Vr A Vf Vr Sf il fÿ v+Œ& <r X SS æ m

1SV183

Abstract: 1SV163 1SV167 1SV149 1SV158 1SV164 1SV165 1SV166 1SV166S 1SV168
Contextual Info: - ft fi & tt p £ X Æ Vrm mW (V) te Vr C t(V l)/C t(V 2 ) mm fk f t C t.C j*(p F) max min Tun 15 Tun 30 540 30. 0 16. 25 2. 43 1 8 3SVI 53 435 19. 9 14. 16 2. 11 typ ft iRmax Qmin Vr (V) min (V) 1SV149 fdmax typ max n (v ) 187- ( f l ) Vr (V) f(MHz) (//A) Vr (V)

eeprom programmer schematic

Abstract: usb eeprom programmer schematic vr stamp schematic FT232BM RSC164 RSC-4128 DSP programmer schematic ICS 70-0070-x RSC-164 schematic application note
Contextual Info: VR Stamp Programmer User Manual With FluentChip™ Technology 2005 Sensory, Inc. P/N 80-0277-B User Manual VR Stamp™ Programmer Introduction Welcome to the VR Stamp™ Toolkit and the world of low-cost, high-performance speech recognition! Based on an industry standard 40 pin DIP footprint, the VR Voice Recognition

S0234

Contextual Info: 920301 1096 ÏW >; U » H H u ta P§ 1 vtr M i r r \£ V ffl >1 "-ir vr vr 514^ '• aC v Vr v; i»H H Pi À Vr Vr V V^-r 'i /// n* i C~ ~ sz ‘ifr Ee U1 'ir > V*- 3î •Î -$ s ËK V -X 35 3ïsf> ïnfr ■ îd- 5iïï pS* -tt* (53* ~A m -*fc vi £ ? m >$ mi

vr stamp schematic

Abstract: RSC164 easy vrstamp schematic FT232BM RSC-4128 DSP programmer schematic ICS RSC-164
Contextual Info: VR Stamp Programmer User Manual With FluentChip™ Technology 2006 Sensory, Inc. P/N 80-0277-D User Manual VR Stamp™ Programmer Introduction Welcome to the VR Stamp™ Toolkit and the world of low-cost, high-performance speech recognition! Based on an industry standard 40 pin DIP footprint, the VR Voice Recognition

vr stamp schematic

Abstract: circuit diagram of speech recognition usb eeprom programmer schematic sensory sonicnet eeprom programmer schematic RSC-4128 DSP programmer schematic ICS STAMP WORKS
Contextual Info: VR Stamp Toolkit Quick Start Guide With FluentChip™ Technology 2007 Sensory, Inc. P/N 80-0272-J Quick Start Guide VR Stamp™ Toolkit Welcome to the VR Stamp™ Toolkit and the world of low-cost, high-performance speech recognition! The materials in the VR Stamp Toolkit allow a developer to produce innovative, powerful products that combine a

M5 DIODE 22-35 L

Abstract: 95-18N1 DIODE 22-35 L DIODE RECTIFIER BRIDGE SINGLE 22-35 95-16N1 9512 ixys mdd
Contextual Info: Diode Modules MDD 95 IFRMS = 2 x 180 A IFAVM = 2 x 120 A VRRM = 800 - 1800 V VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Maximum Ratings 180 A 120 A 50/60 Hz, RMS

KPIN1041E01

Abstract: S7911 S7912 SE-171
Contextual Info: PHOTODIODE Si PIN photodiode S7911, S7912 High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage S7911: fc=2 GHz VR=2 V S7912: fc=1.5 GHz (VR=2 V) l Low terminal capacitance S7911: Ct=0.45 pF (VR=2 V)

25.332.3453

Abstract: 25.332.4053.1 25346075
Contextual Info: Vertical Pluggable terminal strips Type 8113 B/.VL Type 8113 B/.VR Type 8213 B/.VR 152 i jf t r i l n f Type 8213 B/.VL mm OTVV - C oior:black - 5mm / light grey - 5.08mm Vertical Plug connector VR rated cross section 2.5 mm2fine stranded rated voltage

Contextual Info: R1130x SERIES 300mA LDO REGULATOR NO.EA-078-111027 OUTLINE The R1130x Series are CMOS-based voltage regulator VR ICs. VR function has features of high ripple rejection, low dropout voltage, high output voltage accuracy, and ultra-low supply current. Each of these ICs

germanium diodes

Abstract: AA118 aa132 1N126 1N126A 1N128 AA131 1N933 1N198 1n34
Contextual Info: Tungsten point contact germanium diodes • General purpose Diodes de signal au germanium à pointe tungstène - Usage généraI Type Case B oîtie r VR V *0 iF * VF max (mA) max / ,v // *R (*xA> lF (mA) Tam b 25 »C / / / •r (mA) / max Vr (V) max Vr (V)

LV2201A

Abstract: LV2001 LV2001A LV2002 LV2002A LV2201 LV2202 LV2202A LV2301 LV2302
Contextual Info: KNOX SEMICONDUCTOR, INC. VHF HYPERABRUPT TUNING DIODES LV2001 A - LV2002(A) TYPE NUMBER LV2001 LV2001A LV2002 LV2002A CT CAPACITANCE (pF) f = 1 MHz VR= 4 Vdc VR= 8 Vdc VR=20 Vdc MIN MAX MIN MAX MIN MAX 18 19 18 19 22 21 22 21 7.5 7.8 7.5 7.8 10.5 9.2 10.5

Contextual Info: SI-FOTODETEKTOREN Package Type SILICON PHOTODETECTORS ϕ deg. Radiant sensitive area mm2 IP VR = 5 V λ = 870 nm 1 mW/cm2 µA 5.1.3 im Plastikgehäuse mit Filter für 950 nm IRED IR (VR = 10 V) λ10% tr,tf (VR = 20 V, RL = 50 Ω) nA nm ns Ordering code

vr sensor

Abstract: Variable Reluctance Sensor Interface CS1124 vr sensor interface
Contextual Info: AND8149/D Understanding and Using the CS1124 VR Sensor Interface Prepared by: Robert Fugere ON Semiconductor http://onsemi.com APPLICATION NOTE The voltage developed by the VR sensor is applied through resistor R1 to the IN1 pin. When the VR sensor produces no voltage VRS = 0 the IN1 pin is biased to the

N370sH12

Abstract: N1114LS120-180 n540sh12 N370SH N280SH12-16 N390CH30-36 n200ch N195CH12-16 N280SH12 N195CH12
Contextual Info: Old Part Number PDF Data Sheet Available RECTIFIER DEVICE - Phase Control Thyristors - Capsule Types VDRM VRRM Range New Part Number IT AV @ Tsink o 55 C ITSM(1) ITSM(2) 10ms I2t(2) 10ms 10ms VR o VR ≤ 10V 25 C £10V ≤ 60% VRRM IT(RMS) @ Tsink VR di/dt Non

BPW34S

Abstract: Q62702-P1794 bpw 104
Contextual Info: SI-FOTODETEKTOREN Package Type SILICON PHOTODETECTORS ϕ Radiant sensitive area deg. mm2 IP λ = 950 nm, Ee = 1 mW/cm2, VR = 5 V µA IR (VR = 10 V) λ10% tr,tf (VR = 20 V, RL = 50 Ω) nA nm ns 2.2 SMT-Dioden 2.2 SMT-Diodes 2.2.1 SMT PIN Fotodioden 2.2.1 SMT-PIN Photodiodes

Contextual Info: r 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 6 ,19 ALL RJGHTS RESERVED- D C B 2 . 5 4 + 0 . OS T Y P . 0035 TOLERANCE NON-CUMULAT 1VE [. 10 0 ± . 2. 5 4+0.08 l.100±.003 | (> j vr > ) vr > ) vr j l (> j

Contextual Info: NJM2257M 1/2 IL08 AFM SYNC SEPARATOR —TOP VIEW— 1 VIDEO IN 1 16 C SYNC OUT 2 7 MM-HT 2 15 FD OUT 10 9 HD OUT 3 VCO OUT 4 14 V SYNC OUT 13 MM-VT 13 12 AFC HD OUT VCO-FILTER 2 6 LPF 7 10 VR-2 8 VCC (+5 V) 9 VR-1 HD MM-HT VCO 5 3 4 LPF VR-2 AFC HD 12 VR-1

SFD 455

Abstract: AAY 45 AAZ15 IN695 Germanium do7-15 in3592 SFD108 D037 D121
Contextual Info: Gold bounded germanium signal diodes - General Purpose ^amb 25 °C D iodes de signal au germ anium à p o in ts o r - Usage généra / Type Case Boltler Vr V >0 vF (mA) (V) / max max max /'F (mA) •r {(iA) / / Vr (V) / Vr / 'R O iA )/ (V) / Tam b l°C)