VR 11 Search Results

VR-61

Abstract: VR-61B VR-61S VR-61U VR-62B VR-63B
Contextual Info: - 278- ft B & PSH W VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 a m * 'J i? y fT ^T C i f y >r '•/ >>r y * y ^ > * ' ) is > %jM7C :k £ fe VRRM Vr I sm I f . I fm* (mHO (V) (V) (A) (mA) 300 150 150 7. 5 150 150 150 300 150 150 150

506b

Abstract: VR-61 VR-61B VR-61S VR-61U VR-62B VR-63B
Contextual Info: 278- - B VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 & f t :k £ fe J 15 |S] f $ t t Vf » S B E ®]S Ik W Vc * 4 = BV r • f ® fti ffl # I Rmax * f l = V f (V PSH P VRRM Vr I sm I f . r f *«= I fm* If («A) (V) I r (A) (V) I r ( h A) </i A) Vr (V)

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)

Contextual Info: 7 INlt likAwJWii \ú UMLim. c COPYRIGHT 19 RELEASED FOR PUBLICATIO N BY AMP INCORPORATED. 4 5 6 3 2 w , 19 TT^T— REVISIONS CM 54 ALL RIGHTS RESERVED. D ES C R IPTIO N P O S T TO IN BOTH Vr/ Vr 1 8 0/3 MEASURED 300 ±„0 1 5 / \ f Vr/ Vr/ Vr/ Vr/ Vr/ PDASTIC

VR-61

Abstract: VR-61B VR-61S VR-61U VR-62B VR-63B
Contextual Info: - 278- ft B VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 & a m * 'J i? y PSH P W (mHO :k £ fe V RRM V r I sm (V ) (A) (V ) 300 7. 5 fT ^ T C i f y >r '• / >>r y 300 * y ^ > * ') is > %jM7C 8 6. 5 I f. I fm * (mA) ]S V f (V ) m in

VR-63B

Abstract: VR-61 VR-61B VR-61S VR-61U VR-62B
Contextual Info: - 278- ft B VR-61 VR-61B VR-61B VR-61S VR-61T VR-61U VR-62B VR-63B VRAY6 VRAY15 & a m * 'J i? y PSH P W (mHO :k £ fe V RRM V r I sm (V ) (A) (V ) 300 7. 5 fT ^ T C i f y >r '• / >>r y 300 * y ^ > * ') is > %jM7C 8 6. 5 I f. I fm * (mA) ]S V f (V ) m in

GEP600

Abstract: GM7HS GM2HS GM10HS GM5HS gm7vhr Germanium Power Devices Germanium power germanium power devices corporation GEP700
Contextual Info: a TYPE Ge pn Detectors ACTIVE SHUN T R E S DARK CURRENT TEST REVERSE MAX REVERSE CAPACITANCE DIA. @Vr= 10mV @Vr=Vtest BIAS VOLTS @Vr MAX |iA MAX. (Volts) (Volts) <PF) (mm.) (K 12) Min. Typ. NEP CUT-OFF FREQ. (pWA'Hz) @Vr, 50QR l (Hz.) 30 60 2.0 10 15 27

2SD2349

Abstract: 2S0234
Contextual Info: >4 -X u. r Ml V V Z u ?IQi v: Vf IB 4tt EE UJ «nS — D V a- si ~A m 3* XU 4HmS ÄU Ä xn 4ft *S Hpi » P| 1 r \r m Vr H JD H ja V s. V <L ✓o Vr Vr A *3 âS & p¿r -* E3h c? 1 Pi Pi m ffl H m H u at Jit r ^3 Vr \3 Vr A Vf Vr Sf il fÿ v+Œ& <r X SS æ m

1SV183

Abstract: 1SV163 1SV167 1SV149 1SV158 1SV164 1SV165 1SV166 1SV166S 1SV168
Contextual Info: - ft fi & tt p £ X Æ Vrm mW (V) te Vr C t(V l)/C t(V 2 ) mm fk f t C t.C j*(p F) max min Tun 15 Tun 30 540 30. 0 16. 25 2. 43 1 8 3SVI 53 435 19. 9 14. 16 2. 11 typ ft iRmax Qmin Vr (V) min (V) 1SV149 fdmax typ max n (v ) 187- ( f l ) Vr (V) f(MHz) (//A) Vr (V)

eeprom programmer schematic

Abstract: usb eeprom programmer schematic vr stamp schematic FT232BM RSC164 RSC-4128 DSP programmer schematic ICS 70-0070-x RSC-164 schematic application note
Contextual Info: VR Stamp Programmer User Manual With FluentChip™ Technology 2005 Sensory, Inc. P/N 80-0277-B User Manual VR Stamp™ Programmer Introduction Welcome to the VR Stamp™ Toolkit and the world of low-cost, high-performance speech recognition! Based on an industry standard 40 pin DIP footprint, the VR Voice Recognition

S0234

Contextual Info: 920301 1096 ÏW >; U » H H u ta P§ 1 vtr M i r r \£ V ffl >1 "-ir vr vr 514^ '• aC v Vr v; i»H H Pi À Vr Vr V V^-r 'i /// n* i C~ ~ sz ‘ifr Ee U1 'ir > V*- 3î •Î -$ s ËK V -X 35 3ïsf> ïnfr ■ îd- 5iïï pS* -tt* (53* ~A m -*fc vi £ ? m >$ mi

vr stamp schematic

Abstract: RSC164 easy vrstamp schematic FT232BM RSC-4128 DSP programmer schematic ICS RSC-164
Contextual Info: VR Stamp Programmer User Manual With FluentChip™ Technology 2006 Sensory, Inc. P/N 80-0277-D User Manual VR Stamp™ Programmer Introduction Welcome to the VR Stamp™ Toolkit and the world of low-cost, high-performance speech recognition! Based on an industry standard 40 pin DIP footprint, the VR Voice Recognition

acer laptop battery pinout

Abstract: PCT303W str f 6655 hp laptop battery pinout circuit diagram wireless spy camera car ecu microprocessors RS -24V SDS RELAY difference between rtos psos vx works c executive NEC BONITO bird bell mini project
Contextual Info: VR Series Catalog 2000 64-bit MIPS Processors 17K, 75X, 78K, V850, VR Document No. U14705EE1V0PF00 2000 NEC Electronics Europe GmbH. Printed in Germany. All rights reserved. VR Series, VR4121, VR4122, VR4181, VR43xx, VR5000, VR5432, VRC4172, VRC4173, Ravin,

car ecu microprocessors

Abstract: VRC4173 green hills ppc compiler manual PCT303W VRC4172 D4047 alu 9308 d green hills compiler options oem v850 difference between rtos psos vx works c executive 216MIPS
Contextual Info: VR Series Catalog 2000 64-bit MIPS Processors 17K, 75X, 78K, V850, VR Document No. U14705EE1V0PF00 2000 NEC Electronics Europe GmbH. Printed in Germany. All rights reserved. VR Series, VR4121, VR4122, VR4181, VR43xx, VR5000, VR5432, VRC4172, VRC4173, Ravin,

vr stamp schematic

Abstract: circuit diagram of speech recognition usb eeprom programmer schematic sensory sonicnet eeprom programmer schematic RSC-4128 DSP programmer schematic ICS STAMP WORKS
Contextual Info: VR Stamp Toolkit Quick Start Guide With FluentChip™ Technology 2007 Sensory, Inc. P/N 80-0272-J Quick Start Guide VR Stamp™ Toolkit Welcome to the VR Stamp™ Toolkit and the world of low-cost, high-performance speech recognition! The materials in the VR Stamp Toolkit allow a developer to produce innovative, powerful products that combine a

M5 DIODE 22-35 L

Abstract: 95-18N1 DIODE 22-35 L DIODE RECTIFIER BRIDGE SINGLE 22-35 95-16N1 9512 ixys mdd
Contextual Info: Diode Modules MDD 95 IFRMS = 2 x 180 A IFAVM = 2 x 120 A VRRM = 800 - 1800 V VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Maximum Ratings 180 A 120 A 50/60 Hz, RMS

IN5819M

Abstract: IN5817M IN5818 IN5818M IN5819 Schottky melf Dll06 IN5817 melf Schottky DL5817
Contextual Info: Surface M o u n t Schottky Diodes Type Number Maximum Peak Reverse Voltage Maximum Average Rectified Current <§> Half-Wave Resistive Load 60Hz l0 @ ta lFM Surge Ir a pk mAdc 2 2 2 200nA @ VR = 50V 200nA @ VR = 40V 200nA @ VR = 30V 15mA 15mA 15mA 1.00 0.95

KPIN1041E01

Abstract: S7911 S7912 SE-171
Contextual Info: PHOTODIODE Si PIN photodiode S7911, S7912 High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage S7911: fc=2 GHz VR=2 V S7912: fc=1.5 GHz (VR=2 V) l Low terminal capacitance S7911: Ct=0.45 pF (VR=2 V)

25.332.3453

Abstract: 25.332.4053.1 25346075
Contextual Info: Vertical Pluggable terminal strips Type 8113 B/.VL Type 8113 B/.VR Type 8213 B/.VR 152 i jf t r i l n f Type 8213 B/.VL mm OTVV - C oior:black - 5mm / light grey - 5.08mm Vertical Plug connector VR rated cross section 2.5 mm2fine stranded rated voltage

KPIN1041E02

Abstract: S7911 S7912 SE-171
Contextual Info: PHOTODIODE Si PIN photodiode S7911, S7912 High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage S7911: fc=2 GHz VR=2 V S7912: fc=1.5 GHz (VR=2 V) l Low terminal capacitance S7911: Ct=0.45 pF (VR=2 V)

Contextual Info: CHARACTERIZATION CURVES P.O. BOX 609 ? ROCKPORT, MAINE 04856 ? 207-236-6076 ? FAX 207-236-9558 -6- VHF HYPERABRUPT TUNING DIODES LV2001 A - LV2002(A) PART NUMBER LV2001 LV2001A LV2002 LV2002A CT CAPACITANCE (pF) f = 1 MHz VR= 4 Vdc VR= 8 Vdc VR=20 Vdc MIN MAX MIN MAX MIN MAX

VR4200

Abstract: VR4000
Contextual Info: NEC ELECTRONICS INC b4E D • t.HE!7SSS 00300*11 bbb INECE PRELIMINARY PRODUCT INFORMATION NEC Vr 4200 MICROPROCESSOR JIPD30450 Description: The Vr 4200 is a low-power, low-cost RISC processor targeted at portable computing and embedded applications. Fully

SHS210

Abstract: SHS361
Contextual Info: Beam-lead GaAs Schottky Barrier Diodes Single diodes Absolute maximum ratings Device Application Electrical characteristics Ta = 25 deg. C Vr (V) *F (mA) Tm (teg. C) Vr @ Ir Vr (V) IB <UA) Ct Vf @ If Vf (V) If (mA) Ct (pF) @ » f H« @ If Rs (Q) If (mA)

n370sh

Abstract: N200CH N0633NC N1114LS N280SH12-16 N370sH12 n600sh12-16 N3022ZC160 n1042ls N0392WC
Contextual Info: Old Part Number PDF Data Sheet Available RECTIFIER DEVICE - Phase Control Thyristors - Capsule Types VDRM VRRM Range New Part Number IT AV @ Tsink o 55 C ITSM(1) ITSM(2) 10ms I2t(2) 10ms 10ms VR o VR ≤ 10V 25 C £10V ≤ 60% VRRM IT(RMS) @ Tsink VR di/dt Non