VQE 23 Search Results

5842s

Abstract: 5841A
Contextual Info: ABSOLUTE MAXIMUM RATINGS at 25°C Free-Air Temperature Output Voltage, Vqe UCN5841A& A5841SLW . 50 V (UCN5842A & A5842SLW ). 80 V Output Voltage, V C e ( su s ) (UCN5841A & A5841SLW) . . . . 35 V f (UCN5842A & A5842SLW) . . . . 50 V f Logic Supply Voltage Range,

C965 transistor

Abstract: transistor c965 transistor c964
Contextual Info: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

C311 Transistor

Abstract: TRANSISTOR C309 transistor c308 c309 transistor
Contextual Info: P D - 9.1072 bitemational jorJRectifier IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to

transistor c925

Abstract: smd transistor c928 transistor c923 c927 diode c928 DIODE C921 transistor smd qe c924 diode smd qe C925
Contextual Info: P D - 9.1142 bitemational [«»IRectifier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Ie • Short circuit rated -1 Ops @125°C, VqE= 15V • Switching-loss rating includes all "tail" losses

vqe 23

Abstract: WE VQE 23 E VQE 23 E ma 2830 MIL-PRF-19500N 1N829-1 1N821-1 VQE 11 VQE-11-021510 e422
Contextual Info: DEFENSE LOGISTICS AGENCY LAND AND MARITIME POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DLA LAND AND MARITIME-VQ VQE-11-021510/Mr. Alan Barone/614-692-0510 November 23, 2010 SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961

LE C346

Contextual Info: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

2SA1298

Abstract: 2SC3265
Contextual Info: TO SH IBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS 2 .5 0.5 0.3 + - + High DC Current Gain : hjpg (1) —100~320 Low Saturation Voltage : Vqe (sa^) = 0.4 V (Max.)

Contextual Info: MG25Q1BS11 T O SH IB A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT r<:i 1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/iS Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.) Enhancement-Mode

c879 transistor

Contextual Info: PD- 9.1075 International BagRectifier IRGPC30K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

Contextual Info: MG25Q1BS11 T O SH IB A M G 2 5 Q 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.)

Contextual Info: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz

A0937

Abstract: 1N4532 at-614 1N3600 1N4148-1 JANTXV 1N4148UR-1 1N4148-1 1N4148-1 JAN 1N4531UR JANTX 1N4148-1
Contextual Info: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER DSCC-VQ VQE-1 o-019452/Mr. December 18, 2009 Deslich/614-692-0593/bpd TO SUBJECT: Notification of Qualification, MIL-PRF-19500N, FSC 5961

transistor TO-3P Outline Dimensions

Abstract: IRGPC60K
Contextual Info: PD - 9.1296 International i^ ] Rectifier IRGPC60K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Fea tu res • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

c846 transistor

Abstract: c844 transistor C-844 C-843 transistor c848 C-844 power transistor c844 "Bipolar transistors"
Contextual Info: P D -9.1071 kitemational ËüRectifier IRGBC30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ms @ 125°C, Vqe = 15V • Switching-loss rating includes ail "tail" losses • Optimized for high operating frequency over 5kHz

c 2432

Abstract: D72F5T2 NPN
Contextual Info: D72F5T1, D72F5T2 File Number 2363 5-Ampere Silicon N-P-N Power Transistors T E R M IN A L D E S IG N AT IO N Features: Low Vqe sat m Fast switching speed • Complementary to D73F5T1,2 ■ The D72F5T1 and D72F5T2 silicon n-p-n power transistors are designed for high current switching applications. They

C405 transistor

Abstract: mv C405 C404 Transistor mv c402 IGBT 500V 35A IRGPC50MD2
Contextual Info: International lü ] Rectifier PD - 9.1145A IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 0 jjs @125°C, Vqe = 15V Switching-loss rating includes all "tail” losses

marking r2k

Abstract: MMST8598 IC marking R2k marking A32 MMST2907 R2B Marking G5B 500ma 40v pnp
Contextual Info: Transistors/Surface Mounting Type • SST3 Package/PNP Type Application Pre Amp Part No. B V c e o V ; Ic (mA @lc & Vqe f r (MHz) Cob (pF) Marking BC807-25 45 500 160 400 1 00 m A /1V 150 6 G5B B11 BC857A 45 100 110 230 2 m A /'5 V 250 4.5 G3E A32 Min. ^FE

Contextual Info: MG25Q1BS11 T O SH IB A M G 2 5 Q 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.)

2SA1313

Abstract: 2SC3325
Contextual Info: TO SHIBA 2SA1313 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 313 A U D IO FREQUENCY LO W POWER AM PLIFIER APPLICATIONS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 SW ITCHING APPLICATIONS • Excellent hEE Linearity : ^FE (2) —25 (Min.) at VqE = —6V, Iq = —400mA

TRANSISTOR C307

Abstract: transistor c308
Contextual Info: International IK» 1Rectifier P D - 9 .1 0 7 2 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

C1027

Abstract: transistor c1027 transistor c1026 c1027 transistor C1026 c1023 transistor C-1027 transistor c1027 same transistor C1023 c1026 transistor
Contextual Info: PD-9.1126A bitemational i ?]Rectifier IRGPH50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 1 0 js @ 125°C, V qe = 10V (5ps ® Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for high operating frequency (over 5kHz)

2Sa1491 SANKEN

Contextual Info: POWER TRANSISTORS i iifi PNP POWER TRANSISTORS Absolute M axim um Ratings Type No. Electrical Characteristics at TA = 25°C Pc VcBO VcEO V ebo Ic 3 ICB0 I eso ^ [BP. CEO hFE VcE tat) <W) (V) (V) (V) (A) (A) Max @ VCB Max @ V fB Min @ lc Min @ lç @ Vqe Max. @ lc @ lB

M607

Abstract: 6MBI50L-120
Contextual Info: /\°7 — y / W ^ / Power Devices 3 ft 1200 1200 volts class/High speed switching m £ V ces V ges Device type Ic Cont. Pc VCE sat (VQE-15V) (Min.) to (- ton Amps. ^sec. V o te Switching tíme (Max.) tf toff K ft Package Net mass Gram s Votts Volts Amps Watte

Contextual Info: SIEMENS BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 306D 1200V 23A !c Pin 3 E C Package