VQE 22 LED Search Results

VQE 22 led

Abstract: FF8E OPTO TECHNOLOGY INC phototransistor visible light 0T115 LED red ot 113 Infrared photodiode sensor
Contextual Info: O PTO TECHNO LOG Y i n c 13 D H bflD2S4S □□□□□32 1 7 ~ ~ f/- '7 3 OP-TEC * - 0 0 -» - — ,50 —*• .285 ♦ .113 DIA. HOLE 2 t .44 © " IT ” .25 / y 1, . 1 ' ! . . ¡ .il. * - 4 C" ♦ .13 © .250 I— RED/WHITE = + LED

43t SMD

Abstract: SMD 43t SFH309 FA SFH309
Contextual Info: SFH309 DAYLIGHT FILTER SFH309FA SIEMENS Silicon NPN Phototransistor Maximum Ratings FEATURES • Especially suitable for applications - SFH 309:380 to 1180 nm - SFH309 FA: 880 nm • High linearty • 3 mm LED plastic package • Avllable In groups APPLICATIONS

OTR680

Abstract: OTR690 bar code phototransistor high resolution phototransistor Infrared Emitting Diode phototransistor visible light bar code lens phototransistor LED 690 nm diode
Contextual Info: TM OPTO TECHNOLOGY INC 2fiE böQ2245 D QQÜ010S 2 ^ -7 3 - OPTO TECHNOLOGY BAR CO DE READER/ FINE LINE SEN SO R W/.007"-.013" RESOLUTION T Y PE O TR 68O OTR69Q DESCRIPTION NOT ACTUAL SIZE ABSOLUTE MAXIMUM RATINGS: 25°G Infrared Emitting Diode 940 nm Opto Technology’s OTR680/690 series

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

PV0402AP

Abstract: SILICON CONTROL RECTIFIER DETAILS opti 85c 1045a PV040 international rectifier optocoupler
Contextual Info: International IO R Rectifier Data Sheet No. 1.045A PV0402AP Microelectronic HEXFET POWER MOSFET PHOTOVOLTAIC RELAY Power |C Re|ay Single Pole, Normally Open + Ring Detector _ 0-400V, 150mA AC/DC Applications General Description

FAIRCHILD 3904

Contextual Info: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ MM74C912 6-Digit BCD Display Controller/Driver General Description T h e M M 74C 912 display controllers are interface elem ents, w ith m emory, th a t drive a 6-digit, 8-segm ent LED display. The display controllers receive data inform ation through 5

Contextual Info: TLP124JLP124-4 GaAs IRED & PHOTO-TRANSISTOR TLP124 Unit in mm OFFICE MACHIN E. P R O G R A M M A B L E CONTROLLERS. A C /D C -IN PU T M O DULE. T ELEC O M M U N IC AT IO N . The TOSHIBA MINI FLAT COUPLER TLP124 and TLP124-4 is a small outline coupler, suitable for surface mount assembly.

MIC5801BN

Abstract: MIC5801AJBQ 5962-8764001WA1
Contextual Info: General Description Features The MIC5800/5801 latched drivers are high-voltage, highcurrent integrated circuits comprised of four or eight CMOS data latches, a bipolar Darlington transistor driver for each latch, and CMOS control circuitry for the common CLEAR,

IPM1560

Abstract: high side IGBT driver optocoupler
Contextual Info: P D -9.1283 International S Rectifier PROVISIONAL IP M 1 56 0 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 2kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast“ IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes.

ultrafast n channel 600v 20a IGBT

Contextual Info: International IMlRecbfier provisional P D -9.1284 IPM2060 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 3 kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast" IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes,

D147D

Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
Contextual Info: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC

VEB mikroelektronik

Abstract: information applikation e435e information applikation mikroelektronik applikation heft fzl135 mikroelektronik Heft 12 D4803DC D718D "Mikroelektronik" Heft
Contextual Info: Information Applikation Treiber IC aus dem HFO fr vrn" m m . . Information Applikation HEFT 53 NEUE TREIBERSCHALTKREISE v a b helbleifcerwerk F r a n k f u r t / o d e r botrwb im v«b kombinat mikroeloktranik | KAMMER DER TECHNIK i * » _ J Ebertusstraße 2, Frankfurt Oder

transistors, thyristors 712

Abstract: CA3240
Contextual Info: HARRIS SEMICOND SECTOR ì H a r r • 43G2271 00ML340 Ô73 H H A S i s C SEMICONDUCTOR A J f U 3 2 mm 4 M Dual BiMOS Operational Amplifier with MOSFET Inpu/Bipolar Output 1993 Features Description • Dual Version of CA3140 The CA324QA and CA3240 are dual usrsions of the

4N23A JANTXV

Abstract: 4N24A 4N24 opto transistor tl 4311 4N22 4N22A 4N22U 4N23 4N23A 4N23U
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 October 2009. INCH-POUND MIL-PRF-19500/486G 22 July 2009 SUPERSEDING MIL-PRF-19500/486F 15 September 2005 PERFORMANCE SPECIFICATION SHEET COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE,

GA-32

Abstract: CA3240AE1 GA3240 ca3240 application circuit ca3240
Contextual Info: CA3240, CA3240A ¡1 } H a r r i s S E M I C O N D U C T O R w 7 m w Du a l, 4 . 5 M H z , B i M O S O p e r a t i o n a l A m p l i f i e r with M O S F E T I n p u t / B i p o l a r O u t p u t November 1996 Features Description • D u a l V e rs io n o f C A31 40

2090-4050

Abstract: ICL8211 LM199
Contextual Info: Intersil High-Reliability Products ICL8211/ICL8212 High Reliability Programmable Voltage Detector GENERAL DESCRIPTION FEATURES The Intersil ICL8211/8212 are micropower bipolar mono­ lithic integrated circuits intended primarily for precise volt­ age detection and generation. These circuits consist of an

VEB mikroelektronik

Abstract: "Mikroelektronik" Heft GWS servo VEB Kombinat zf filter lm 7803 3V Positive Voltage Regulator E355D "halbleiterwerk frankfurt" mikroelektronik Heft U706D VQB71
Contextual Info: H albleiter-B auelem ente Semiconductors D ie vorliegend e Übersicht en th ält in g ed rä n g te r Form d ie wichtigsten G renz- und Kenn­ d aten d e r in d er D D R g efertigten H a lb le ite rb au e le m e n te . Dem A n w en der soll durch diese Übersicht die Auswahl der jew eils in Frage kom menden

information applikation

Abstract: Radio Fernsehen Elektronik 1977 Heft 9 information applikation mikroelektronik 40098 Mikroelektronik Information Applikation mikroelektronik Heft 12 mikroelektronik applikation MIKROELEKTRONIK Frankfurt applikation heft 40511
Contextual Info: in j^ D lk ^ im iB lB l- c t e n n r iil- c KaD Information Applikation CMOSLOGIKSCHALTKREISE i - : d o l - i t s n a n i l - c Information Applikation • Heft 12: CMOS-Logilc-IS ^ K»D T veb halbleiterwerkfrankfurt oder ' VEB ZENTRUM FÜR FO R SC H U N G

b342d

Abstract: information applikation applikation heft mikroelektronik Heft 12 information applikation mikroelektronik Transistoren DDR VEB mikroelektronik "information applikation" mikroelektronik Heft 10 ITT transistoren
Contextual Info: m n t k if ^ s j e le lK t e n a r iH - c g|B Information Applikation in n f B = a n iis ö lH W b n a n lK Information Applikation Heft: 28 Transistorarrays Iweb Halbleiterwerk frankfurt/oder | betrieb im veto kombinet mikroelektronik KAMMER DER TECHNIK Bezirksvorstand Frankfurt/O.

vqe 13

Abstract: EL1056CM EL1U L1056A
Contextual Info: HIGH PtRFORMAHCE ANALOGWTEGRATEDCIRCUITS C/ELI056C M O T lO lltfllC Hlffh~Sp€€ ì Pill DVIV€V F e a tu r e s G en era l D e sc r ip tio n • • • • • T h e E L 1056 is d esig n ed to d riv e h ig h -q u a lity te s t sig n a ls in to close o r te rm in a te d loads. I t h as a d isp e rsio n o f 250 p s o r less —

information applikation

Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
Contextual Info: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK

information applikation mikroelektronik

Abstract: information applikation C520D mikroelektronik Heft mikroelektronik Heft 12 VQB71 Mikroelektronik Information Applikation VQE23 applikation heft Applikation Information
Contextual Info: m O N in s ie la t K Information Applikation t a n a r il* INFORMATION APPLIKATION MIKROELEKTRONIK Heft 14: C 520 D 3-Digit-Analog/Digital-Wandler <?> veb H alb le ite rw e rk franlcfurt o d e r lejtb etrieb im veb kombinat mikroelektronik K A M M E R DER T E C H N I K

j001 1003

Abstract: 13001 TRANSISTOR si 13001 j001 1003 led 13001 TRANSISTOR equivalent 13001 LZ transistor te 13001 marking 2U diode t5 tr 13001 darlington array 2804
Contextual Info: M I L - M - 385 1 0 / i 41 A 4 Mav 1988 WfRSEfilNi-M I L - M - 385 10/ 14 l 1 N o v e m b e r 1984 MILITARY SPECIFICATION MICROCIRCUITS, DARLINGTON T R A N S I S T O R A R R A Y , S E V E N AND E I G H T MONOLITHIC SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d

B083D

Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik