VQE 22 E Search Results

307d

Abstract: vqe 14 E P 307 diode 307d
Contextual Info: SIEMENS BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VC E BUP 307D 1200V 35A h Pin 3 E C Package Ordering Code

Contextual Info: BCR 192W PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R-|=22k£2, R2=47k£2 c FI □ ill Type Marking Ordering Code Pin Confic uration BCR 192W WPs 1= B Q62702-C2282 Package 2= E

transistor cq 529

Abstract: 2SC5245 51842 CQ 734 G TRANSISTOR cq 802
Contextual Info: Ordering number:EN 5184A SAMO N0.5184A i 2SC5245 NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f= 1GHz . : NF = 1.4dB typ (f = 1.5GHz). • High gain : I S21e I 2= lOdB typ (f= 1.5GHz).

Contextual Info: PD -5.05 5 In te rn a tio n a l K SR Rectifier PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA100TS60U Ultra-Fast Speed IGBT Features • Generation 4 IG B T technology V c E S = 600 V • UltraFast: Optim ized for high operating frequencies 8 -4 0 kH z in hard switching, >200

Contextual Info: PD -9.1064 bitemational ior Rectifier IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c e s = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

Contextual Info: PD -9.1656B International I R Rectifier IRG4PC40W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power • • • • V ces = 6 0 0 V Supply and P F C power factor correction applications Industry-benchmark switching losses improve

Contextual Info: International P D - 9.1031 ¡ragRectifier IRGPC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Sw itching-loss rating includes all "tail" lo sses • Optimized for high operating frequency over 5kHz S e e Fig. 1 for Current vs. Frequency curve

Contextual Info: PD - 9.1657A International I R Rectifier IRG4 PC50W PRELIMINARY INSULATED GATE BIPOLARTRANSISTOR Features • Designed expressly for Switch-Mode Power V qes — 6 0 0 V Supply and P F C pow er factor correction applications • Industry-benchmark switching losses improve

Contextual Info: International içrç]Rectifier Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features * Switching-loss rating includes all "tail” losses • Optimized for line frequency operation to 400Hz V C ES = 1200V

Contextual Info: International M Redifier pd9.i4ib IRGMH40F preliminary INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • • • • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz ~ 8 kHz

skiip 11 nec 06 1

Abstract: skiip 13 nec 06 3
Contextual Info: s e MIKRO n SKiiP 11 NEC 06 - SKiiP 11 NEC 06 I Absolute Maximum Ratings S ym bol C ond itions 1 Values Units Theatsink ~ 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms, Theatsink “ 25 / 80 °C 600 ±20 1 4 /1 0 2 8 /2 0

Contextual Info: PD - 9.1654A International I R Rectifier IR G 4 B C 4 0 W INSULATED GATE BIPOLAR TRANSISTOR Features c • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

Contextual Info: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a

Contextual Info: PD - 9 .1 4 5 5 A International I R Rectifier IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • S ta n d a rd : O p tim ize d fo r m in im u m saturation Vces = 600V v o lta g e an d low operating fre q u e n c ie s < 1 kH z

siemens igbt BSM 150 gb 100 d

Abstract: siemens igbt BSM 100 gb siemens igbt BSM 150 Gb 160 d siemens igbt BSM 50 gb 120 d siemens igbt BSM 300 siemens igbt chip siemens igbt BSM 100
Contextual Info: r i 3 r I i C f i l m i c v i t u r d o r U O I V e a I n v i u r ï D V J L -l n I o n r t K i o C - \J ^ IGBT Power Module • Haif-bridge ' • including fast free-wheeiing diodes 'jm • Package with insulated metai base piate VM4UJ0/3 Type ^CE Package

Contextual Info: TO TOSHIBA {D ISCR ET E/OPTO} D E j IGTTaSG Q01bl54 7 | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA 90D SEMICONDUCTOR 16124 T~3?-27 D TOSHIBA GTR MODULE M625H2YS1 TECHNICAL DATA SILICON N CHANNEL 1GBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.

Contextual Info: P D -5.044 International I R Rectifier PRELIMINARY CPV362M4U IGBT SIP MODULE UltraFast IGBT Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail" losses • H E X F R E D soft ultrafast diodes

Contextual Info: International IÔR Recti fi 6 f PD -5.05 6B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK G A 150T S 6 0 U Ultra-Fast Speed IGBT Features • G en eratio n 4 IG BT tech nology V c e s = 600 V • U ltraFast: O ptim ize d for high operating fre q u e n cie s 8 -4 0 kH z In hard sw itching, >200

Contextual Info: PD - 9.1033A International ËëlRectffier IRGP450U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e

K 193 transistor

Abstract: ZG 1056
Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900M Hz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFG193 1= E Q62702-F1291

TO218AB package

Abstract: GEA15 TO-218AB Package
Contextual Info: SIEMENS BUP 602D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 2 Pin 1 G Type BUP 602D VÒE 600V Pin 3 C E fc Package Ordering Code

transistor 2222a

Abstract: pm 2222a 3316 TRANSISTOR
Contextual Info: Thp m LriM I H E W LE T T P ack ard 4.8 VNPN Silicon Bipolar Common Emitter Transistor Ifechnical Data A T-38086 F eatures • 4.8 Volt Pulsed pulse width = 577 jisec, duty cycle = 12.5% /CW Operation • +28 dBm Pulsed Pout @ 900 MHz, Typ. • +23.5 dBm CWPout

Contextual Info: International IO R Rectifier PD - 91683 IRG4PSC71K PR ELIM INARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR c Features • H o le-less clip/pressure m ount p a c k a g e com patible with T O -2 4 7 and T O -2 6 4 , with reinforced pins

2MBI200PB-140

Abstract: 2mb1200 2MB1200PB-140 M235
Contextual Info: 2MBI200PB-140 IGBT Modules IGBT ModU I6 S P series 1400V/200A 2 in one-package • Features • Small temperature dependence of the turn-off switching loss • Easy to connect in parallel •Wide RBSOA square up to 2 times of rated current and high shortcircuit withstand capability