MA55MS2 Search Results

Contextual Info: International içrç]Rectifier Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features * Switching-loss rating includes all "tail” losses • Optimized for line frequency operation to 400Hz V C ES = 1200V

Contextual Info: . • International H Rectifier 275 ■ Power Modules Features 25A G lass passivated junctions for greater reliability Electrically isolated base plate 35 0 0 V RM S Available up to 1 200 V RRM, V QRM High surge capability Large creepage distances Simplified mechanical designs, rapid assem bly

ru E78996

Abstract: IRF E78996 E78996 rectifier module wiring IRK E78996 701819-303ac thyristors itt
Contextual Info: Bulletin 127131 rev. C 09/97 International I Q R Rectifier i r THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR k .4 1 , .5 6 Electrically isolated: DBC base plate • 3 500 V BMS isolating voltage ■ Standard J E D E C package Simplified mechanical designs, rapid assembly

Contextual Info: Provisional Data Sheet No. PD - 9.1393C International IGR Rectifier IRHM7264SE R E P E T IT IV E A V A LA N C H E A N D d v / d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11Q, (SEE) RAD HARD HEXFET

Contextual Info: International S R ectifier PD - 2.270A 82CNQ030 SCHOTTKY RECTIFIER 80Amp Major.Ratings and Characteristics Characteristics Desciption/Features 82CNQ030 Units If av Rectangular waveform 80 A Vrrm 30 V Ifsm tp = 5ps sine 5100 A VF @ 40Apk, T j = 125°C (per leg)

Contextual Info: 4fiSS452 001522b bOl • INR International g j i Rectifier HEXFET Power MOSFET • • • • • • • PD-9.841 IR F I 9Z 24 G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel 175°C Operating Temperature