VQE 21 Search Results

C965 transistor

Abstract: transistor c965 transistor c964
Contextual Info: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

C311 Transistor

Abstract: TRANSISTOR C309 transistor c308 c309 transistor
Contextual Info: P D - 9.1072 bitemational jorJRectifier IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to

transistor c900

Abstract: transistor c904 transistor c903 c901 transistor transistor c902 C897 c898 TRANSISTOR C898 c902 C901
Contextual Info: International [TOR]Rectifier P D - 9.1105 IRGBC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features VcES = 600V • Short circuit rated -10ps @125°C, Vqe = 15V • Switching-loss rating includes all 'tail" losses

Contextual Info: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

LE C346

Contextual Info: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

MG600Q1US41

Contextual Info: T O SH IB A MG600Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG600Q1US41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5^s Max. Low Saturation Voltage : VQE(sat) = 4.0V (Max.) Enh ancement-Mode

Contextual Info: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz

transistor C930

Abstract: transistor c929 transistor C935 C936 C933 transistor C930 e C930 transistor transistor c936 transistor C933 c929
Contextual Info: kitemational IOR¡Rectifier PD-9.1109A IRGPC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Ie Vces = 600V Short circuit rated -10ps @ 125°C, VQE = 15V Switching-loss rating includes all "tail" losses

IRGBC36

Abstract: IRGBC46 IRGBC30 THOMSON 58E 02073 IRGPC50 IRGPC56 IRGPC THOMSON DISTRIBUTOR 58e d IRGBC20
Contextual Info: T H OH SO N/ ^D 2b a? 3 D O G S ? T b 4T4 • SflE D DISTRIBUTOR TCSK International llORl Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes VcE oo VQE(Ui) Gate to Emlttar Threshold Vottage Collector to Emitter Sateratkm Max (V) Typ 00

Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SD1088 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2 S D 1 088 IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm çJ3.6 ± 0.2 ‘10.3MAX.“ / - High DC Current Gain : hpE = 2000 (Min.) (VqE = 2V, Iq = 2A)

MG300Q2YS40

Abstract: MG300Q2YS
Contextual Info: T O SH IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed • • • • EQUIVALENT CIRCUIT : tf=0.5/;s Max. trr = 0.5^s (Max.) : VQE(sat)“ 4*0V (Max.)

TRANSISTOR C307

Abstract: transistor c308
Contextual Info: International IK» 1Rectifier P D - 9 .1 0 7 2 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

C1027

Abstract: transistor c1027 transistor c1026 c1027 transistor C1026 c1023 transistor C-1027 transistor c1027 same transistor C1023 c1026 transistor
Contextual Info: PD-9.1126A bitemational i ?]Rectifier IRGPH50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 1 0 js @ 125°C, V qe = 10V (5ps ® Vqe = 15V • Switching-loss rating includes all “tail" losses • Optimized for high operating frequency (over 5kHz)

Contextual Info: MITSUBISHI IGBT MODULES CM300DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: 3 TYP N— — N -T A B # 1 10 t=0.5 Q —m - h K- i ' I i N -O ü -O lü - -O Low Drive Power □ □ Low VQE(sat) Discrete Super-Fast Recovery Free-Wheel Diode

Contextual Info: T O SH IB A 2SD2129 2 S D 2 1 29 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 • High DC Current Gain : hp'E = 2000 (Min.) Low Saturation Voltage : Vqe (sat) = l-5V (Max.)

Contextual Info: TOSHIBA GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. U n it in mm 1S.8±0.5. 03.6±O.2 • • H ig h sp e e d • Low Satu ration Voltage : VQE say = 3.4V (Max. • 3-5 High Input Impedance

marking r2k

Abstract: MMST8598 IC marking R2k marking A32 MMST2907 R2B Marking G5B 500ma 40v pnp
Contextual Info: Transistors/Surface Mounting Type • SST3 Package/PNP Type Application Pre Amp Part No. B V c e o V ; Ic (mA @lc & Vqe f r (MHz) Cob (pF) Marking BC807-25 45 500 160 400 1 00 m A /1V 150 6 G5B B11 BC857A 45 100 110 230 2 m A /'5 V 250 4.5 G3E A32 Min. ^FE

Contextual Info: DIXYS IXSH 10N60AU1 VCES IC25 IGBT with Diode "S" Series Improved SCSOA Capability vCE sat typ Symbol T est C o n d itio n s V CES Tj = 25°C to 150°C 600 V v CQR Td = 25°C to 150°C; RGE= 1 MQ 600 V V0ES Continuous ±20 V VQE„ Transient ±30 V 'c a s

Contextual Info: MCROPAC IN D U S T R IE S IN C 1 SE D • tllg tk O O O O O tn t S ■ „P I PHYSICAL DESCRIPTION OPTICAL/ELECTRICAL CHARACTERISTICS AT 25° C PARAMETER LIGHT CURRENT DARK CURRENT TEST CONDITION VQE “ 5 V * H = 9 m W /on’ t VCE = 30 V H=0 1C = IDOpA SYMBOL

Contextual Info: SILICON PN P T R IP LE D IFFUSED T Y P E 2 S B 1 4 H U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. • & 3.2 ± 0.2 W - High DC Current Gain : hp>E = 1500 M in . (V q • 10±Q.3 e= - 3V, I c = - 1 A ) Low Saturation Voltage : VQE(say = —1.5V (Max.) ( I c = — 1A)

Contextual Info: euoec BSM150GB120DN2E3166 F IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate Type VbE Package O rdering Code BSM 150GB120DN2E3166 1200V 210A HALF-BRIDGE 2 C67076-A2112-A70

Contextual Info: euoec F BSM 150 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 150 GB 120 DN2 1200V 210A HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings Parameter

VQE 11

Contextual Info: euoec F BSM 150 G AL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 150 GAL 120 DN2 VCE h 1200V 210A Package Ordering Code HALF BRIDGE GAL 2 C67076-A2013-A70

A4200

Abstract: bup304 PS 307 5A 65027 C3523 BUP 307 Q67078-A4200-A2 BUP 304
Contextual Info: I ! SIEMENS BUP 304 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type l^CE h 1000V 35A BUP 304 Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4200-A2