VQE 21 Search Results

C965 transistor

Abstract: transistor c965 transistor c964
Contextual Info: PD - 5.032 International S» ]Rectifier CPV362MK IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated - 10ps @ 125°C, Vqe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

Contextual Info: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

LE C346

Contextual Info: International Rectifier P D -9.1133 IRGBC30M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10 ms @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: International i“RjRectifier PD - 9.1297 IRGPC60M PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features c • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz

IRGBC36

Abstract: IRGBC46 IRGBC30 THOMSON 58E 02073 IRGPC50 IRGPC56 IRGPC THOMSON DISTRIBUTOR 58e d IRGBC20
Contextual Info: T H OH SO N/ ^D 2b a? 3 D O G S ? T b 4T4 • SflE D DISTRIBUTOR TCSK International llORl Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes VcE oo VQE(Ui) Gate to Emlttar Threshold Vottage Collector to Emitter Sateratkm Max (V) Typ 00

TRANSISTOR C307

Abstract: transistor c308
Contextual Info: International IK» 1Rectifier P D - 9 .1 0 7 2 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: MITSUBISHI IGBT MODULES CM300DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: 3 TYP N— — N -T A B # 1 10 t=0.5 Q —m - h K- i ' I i N -O ü -O lü - -O Low Drive Power □ □ Low VQE(sat) Discrete Super-Fast Recovery Free-Wheel Diode

Contextual Info: TOSHIBA GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. U n it in mm 1S.8±0.5. 03.6±O.2 • • H ig h sp e e d • Low Satu ration Voltage : VQE say = 3.4V (Max. • 3-5 High Input Impedance

Contextual Info: MCROPAC IN D U S T R IE S IN C 1 SE D • tllg tk O O O O O tn t S ■ „P I PHYSICAL DESCRIPTION OPTICAL/ELECTRICAL CHARACTERISTICS AT 25° C PARAMETER LIGHT CURRENT DARK CURRENT TEST CONDITION VQE “ 5 V * H = 9 m W /on’ t VCE = 30 V H=0 1C = IDOpA SYMBOL

Contextual Info: SILICON PN P T R IP LE D IFFUSED T Y P E 2 S B 1 4 H U nit in mm SW ITCH IN G APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. • & 3.2 ± 0.2 W - High DC Current Gain : hp>E = 1500 M in . (V q • 10±Q.3 e= - 3V, I c = - 1 A ) Low Saturation Voltage : VQE(say = —1.5V (Max.) ( I c = — 1A)

siemens 314S

Abstract: BUP 314S 314S
Contextual Info: SIEMENS BUP 314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free • Avalanche rated Type ^CE BUP314S 1200V 25A h Package Ordering Code TO-218 AB C67040-A4207-A2 Maximum Ratings Parameter

diode lt 238

Abstract: 21N60ED
Contextual Info: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced

Contextual Info: PD -9.1689 International IGR Rectifier IRG4IBC20KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz With lOW V C E o n • Short Circuit Rating 10ps @ 125°C, Vge = 15V

Contextual Info: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values

Contextual Info: SOLI» STATE DEVICES INC 15E D |i3ttQll DD02071 S | T - 33-11 2N5002 AND 2N5004 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS CASE STYLE X JEDEC TO—59 ALL TERMINALS ISOLATED FROM CASE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807

transistor iqr

Contextual Info: PD -9.1690 International IO R Rectifier IRG4IBC30KD PREUMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating lOps @ 125°C, Vge = 15V

15QQ

Abstract: T0320 iCR 406 J
Contextual Info: International ZQR Rectifier PD 9.1601 IRG4BC20FD PREUMINART INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .

Contextual Info: PD - 9.1583A International I R Rectifier IR G 4 P C 5 0 K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tSc =1 Ops, @ 360V VCE Start , Tj = 125°C,

Contextual Info: International IQR Rectifier PD - 9.1448A IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

transistor 2222a

Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
Contextual Info: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B

Contextual Info: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RfhJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V ces 600 V Ic 200 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module

irg4

Abstract: IRG4RC10U
Contextual Info: International IGR Rectifier PD - 9 .1 5 7 2 IRG4 RC10U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

transistor IR 840

Abstract: OZ930
Contextual Info: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

transistor c374

Abstract: transistor c373 transistor c377
Contextual Info: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses