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    VQB 28 Search Results

    VQB 28 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    vqb 201

    Abstract: VQB201 VQB 28 E vqb 27 vqb 200 FUNKAMATEUR-Bauelementeinformation VQB200 Funkamateur ma702 vqb 200 d
    Contextual Info: FUNKAMATEUR-Bauelementeinformation VQB 200 VQB 201 Einstellige Lichtschachtbauelemente grünstrahlend, Zeichenhöhe 12,7 mm, 16 Segmente und Dezimalpunkt, mit Diodenchips auf GaP-Basis Hersteller: VEB Werk für Fernsehelektronik Berlin TGL 42170 Kurzcharakteristik


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    vqb 201vqb201vqb 28 evqb 27+6vqb 200funkamateur-bauelementeinformationvqb200funkamateurma702vqb 200 d PDF

    VQB 28 E

    Abstract: vqb 27 VQB28 Siebensegmentanzeige VQb 28 VQB 18 VQB16 vqb 27 f VQB27 VQB18
    Contextual Info: FUNKAMATEUR-Bauelementeinformation Einstellige Lichtschachtbauelemente rot- bzw. grünstrahlend, Ziffernhöhe 19,6 mm, mit Diodenchips auf GaA/As- bzw. GaP-Basis VQB16/17/18 VQB 26/27/28 T G L 55111 Hersteller: V E B W erk für Fernsehelektronik Berlin Kurzcharakteristik


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    vqb16/17/18vqb 28 evqb 27vqb28+7siebensegmentanzeigevqb 28vqb 18vqb16vqb 27 fvqb27vqb18 PDF

    IRC 265

    Abstract: DP63950 DP83950BVQB DP83950BVQB-MPC MNDP83950B-VQB T101 T102 T103 T104 T105
    Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 10/24/94 Last Update Date: 02/24/99 Last Major Revision Date: 10/24/94 MNDP83950B-VQB REV 0B0 REPEATER INTERFACE CONTROLLER General Description The "RIC" may be used to implement an IEEE 802.3 multiport repeater unit including the


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    mndp83950b-vqbvul160arb28x28x3160ld+10m0003282irc 265dp63950dp83950bvqbdp83950bvqb-mpct101t102t103t104t105 PDF

    NPN MATCHED PAIRS

    Abstract: NPN pnp MATCHED PAIRS 5121 M DI4044 DI-2060
    Contextual Info: HIGH GAIN - SMALL SIGNAL - NPN - MATCHED PAIRS mV Max. •>FEl/l<FE2 Diff. @ lc“ 10 /iA I e“ 0 V ebo Volts Min. @ I e*“ 1 0 / xA lc=0 @ 60 7 Dl 4100 4879 5.0 0.85 to 1.0 55 55 7 By Dl 4045 4880 5.0 0.8 to 1.0 45 45 7 0.1 @ Vqb = 30 Its Dl 4045-1 10.0


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    di-2060100/xaie-10/xa100pa+6ie-10/500manpn matched pairsnpn pnp matched pairs5121 mdi4044 PDF

    Contextual Info: DLI 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE Multiple Level Sensor Multiple Level Sensor Multiple Level Sensor & Ground Multiple Level Sensor & Ground Dual Level & Ground 1595950000 1565970000 1578550000 1578560000 1578530000 1578540000 1578570000


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    PDF

    VQB 24 E

    Abstract: VQB 28 E VQb 28 0485400000 vqb 15
    Contextual Info: D LI 2 .5 LD P N P D L I 2 .5 LD N P N D L A 2 .5 D LA 2 .5 D D L D 2 .5 PE j ß o-#o 0 — 4, o-H ZH Multiple Level Sensor C_> o— •—o k" o -*Q — ' °¿ r° T_r Multiple Level Sensor -,_ r C -j Multiple Level Sensor & Ground C_J T_r Multiple Level Sensor


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    vqb 24 evqb 28 evqb 280485400000+1vqb 15 PDF

    hp 2212

    Abstract: 1783550000
    Contextual Info: D U 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE °¿F ° o-*o 0 - 9— O o-»CH ° “ L ° ~ l Part No. M ultiple Level Sensor & Ground Part No. Dual Level & Ground Part No. Part No. 1783560000 1783790000 1783980000 1783950000 1783600000 1783970000


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    hp 22121783550000 PDF

    diode 1n4007

    Abstract: VQB 28 E vqb 15 0485400000 Diode -1N4007 diode,1N4007 diode 1N4007 terminal Diode 1N4007 vh
    Contextual Info: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly w ell-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring pow er to the


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    wh6900000diode 1n4007vqb 28 evqb 15+50485400000diode -1n4007diode,1n4007diode 1n4007 terminaldiode 1n4007 vh PDF

    diode 1n4007

    Abstract: diode,1N4007 diode 1N4007 terminal Diode -1N4007 DLD 2.5 Diode Marking 1N4007 1317660000 of 1n4007
    Contextual Info: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly well-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring power to the


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    diode 1n4007diode,1n4007diode 1n4007 terminaldiode -1n4007+4dld 2.5diode marking 1n40071317660000of 1n4007 PDF

    bvoe

    Abstract: TSC* 7 VQB 28 E
    Contextual Info: TELEDYNE COMPONENTS 3bE D ITSC 3^171,02 QGG7Ô14 7 WTELEDYNE COMPONENTS SD5400 SD5401 SD5402 QUAD DMOS FET ANALOG SWITCH ARRAYS FEATURES APPLICATIONS • ■ ■ ■ ■ ■ Low Interelectrode Capacitances — Analog Input.3.5 pF Typ


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    sd5400sd5401sd5402107db+44-250cbvoetsc* 7vqb 28 e PDF

    VQB 28 E

    Abstract: 1615280000
    Contextual Info: Feed Through Terminals VLI 1.5 PE VLI 1.5 •M 't& fr ^ ' ■J\ ^ 'i _ MAK 2.5 J - c>-2 d o - o o ° - o M ultiple Level Sensor M ultiple Level Sensor & Ground Triple Level & Ground Terminal Block Selection Data Version 1_r


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    6/88rtvqb 28 e1615280000 PDF

    Contextual Info: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-em itter saturation voltage • C om plem entary types: SM BTA 92 PNP Type Marking Ordering Code Pin Configuration SM BTA 42 s1D Q 68000-A6482 1 =B 2=E


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    68000-a6482ot-23jan-22-1999p00839 PDF

    wiring VDG 13 relay

    Abstract: Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
    Contextual Info: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738


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    mc33121/dmc33121refere20wiring vdg 13 relay+8battery managementswiring vdg 14 relayci 3060 elsys1n40021n62821n6287mc33121fnmc33121p PDF

    wiring VDG 13 relay

    Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
    Contextual Info: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface


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    mc33120/dmc33120wiring vdg 13 relaytip 22 transistor+7mc33120pbattery managements20k301darlington circuit tip 42hb2051n6290amc33120fn PDF

    wiring VDG 13 relay

    Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
    Contextual Info: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738


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    mc33121/dmc33121refere12wiring vdg 13 relay+8battery managementslong range gold detector circuit diagrampin configuration ic rt 30601n40021n62821n6287mc33121fnmc33121p PDF

    21134 transistor

    Abstract: RF1029 21134 case 244c-01 21134 npn RF NPN POWER TRANSISTOR 3 GHZ 5w
    Contextual Info: MOTOROLA SC XSTRS/R F 4bE MOTOROLA •I D ■ b3b75S4 O D 'îSIS b _ SEMICONDUCTOR 7 HNOTb 7 ^3 3 ' 0 5 TECHNICAL DATA The RF Line UHF P o w e r T ran sisto r . . . d e sig n e d p rim a rily fo r w id e b a n d , la rg e -sig n a l o u tp u t a n d d riv e r a m p lifie r stages to


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    b3b7254244c-0121134 transistorrf1029+421134case 244c-0121134 npnrf npn power transistor 3 ghz 5w PDF

    Contextual Info: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23


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    q68000-a6479ot-23jan-22-1999100mhz+1ehp00879 PDF

    Contextual Info: VLI 1.5 PE VLI 1.5 Screw Clamp 35 mm DIN-Rail Terminals Multiple Level Sensors MAK2.5 o— o o— o o O -o o -o o- o o -o Q o o “1 — o ± Dimensions 6 / 7 9 / 6 4 .2473.1172.52" 6 / 6 9 / 6 3 (.2472.7272.48") 6 / 8 8 / 6 4 (.2473.4772.52") 7 (.28") 7 (.28")


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    l-u/2505/50bl5/50rt5/50sw PDF

    CT1012

    Abstract: Sd80-02 TIC 107
    Contextual Info: SD5000, SD5001, SD5002 Universal Semiconductor N -C hannel E nhancem ent Mode Quad D-Mos F E T A nalog S w itch A rra y s O rdering Inform ation Description 20V , 500 10V, 500 15V, 50 0 16-Pin Plastic DIP 16-Pin Cerdip Gold-Backed Chips in Waffle Pack SD5000N


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    sd5000sd5001sd500216-pin+8sd5000nsd5000jsd5000chpsd5001nsd5001jct1012sd80-02tic 107 PDF

    TAG 600

    Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
    Contextual Info: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect


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    tag 600lindner fuseslr 103020 level 3siba fuse ff+6iec 947-7-1 terminal block 400vgw 400795324160990g-fuse 24v dcweidmuller blz 5.08 PDF

    diode AE 84A

    Abstract: BOW84C TRANSISTOR Bdw84d BDW 65 C BOW84
    Contextual Info: BDW84, BDW84A, BDW84B, BOW84C, BDW84D PNP SILICON POWER DARLINGTONS Copyright 1987, Power Innovations Limited, UK • A U G U ST 1978 • R E V IS E D M A R C H 1997 Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D • 150 W at 25°C Case Temperature


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    bdw84bdw84abdw84bbow84c+10bdw84dbdw83bdw83abdw83bbdw83cbdw83ddiode ae 84atransistor bdw84dbdw 65 cbow84 PDF

    motorola rf Power Transistor mrf317

    Abstract: hfc4
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output amplifier stages in 30 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W


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    carrier/120mbf317motorola rf power transistor mrf317hfc4 PDF

    c1235

    Abstract: VQB 28 E
    Contextual Info: PNP Silicon Darlington Transistors • • • • BCP 28; BCP 48 For general AF applications High collector current High current gain Complementary types: 8CP 29/49 NPN Type M arking O rdering code (12-m m tape) Package* BCP 28 BCP 28 Q 62702- Cl 234 SOT-223


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    q62702c1235ot-223bcp28+2bcp48vqb 28 e PDF

    vqb 71

    Abstract: 074I sem 304 SD50G1
    Contextual Info: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package


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    sd5000chpsd5000jsd500qnsd5000+10sd5001sd5002sd50chchpsd5001jsd5002chsd5q02mvqb 71074isem 304sd50g1 PDF